9015C

9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor 9014 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 45 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 100 mA Power Dissipation Ptot 450 mW Tj 150 O TStg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 1 mA Current Gain Group Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Gain Bandwidth Product at -VCE = 10 V, -IC = 10 mA Output Capacitance at -VCB = 10 V, f = 1 MHz C C Symbol Min. Max. Unit hFE hFE hFE hFE 60 100 200 400 150 300 600 800 - -ICBO - 50 nA -IEBO - 50 nA -V(BR)CBO 50 - V -V(BR)CEO 45 - V -V(BR)EBO 5 - V -VCE(sat) - 0.65 V -VBE(sat) - 1 V fT 100 - MHz COB - 7 pF A B C D SEMTECH ELECTRONICS LTD. ® Dated : 19/05/2016 Rev:01 9015 SEMTECH ELECTRONICS LTD. ® Dated : 19/05/2016 Rev:01