1N914

1N914, 1N914A, 1N914B Silicon Epitaxial Planar Switching Diode Features • Fast switching speed • High reliability Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 H C Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol E T M E S Non-Repetitive Peak Reverse Voltage VRM Reverse Voltage VR Average Rectified Forward Current 1N914 1N914A / B Forward Continuous Current 1N914 1N914A / B Non-Repetitive Peak Forward Surge Current at t = 1 s 1N914 at t = 1 µs 1N914A / B at t = 1 µs Power Dissipation Operating and Storage Temperature Range Value Unit 100 V 75 V Ptot 75 200 150 300 1 1 4 500 Tj ,Tstg - 65 to + 175 IF(AV) IFM IFSM mA mA A mW C O Characteristics at Ta = 25 OC Parameter Min. Max. 0.62 - 0.72 1 1 1 IR - 25 5 50 nA µA µA Diode Capacitance at VR = 0, f = 1 MHz Cj - 4 pF Reverse Recovery Time at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr - 4 ns Forward Voltage at IF = 5 mA at IF = 100 mA at IF = 10 mA at IF = 20 mA Reverse Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Symbol 1N914B 1N914B 1N914 1N914A VF Unit Dated : 15/06/2009 V