AO3442A

UMW R UMW AO3442A 100V N-Channel MOSFET General Description SOT–23 The AO3442 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) 100V 1A 1. GATE RDS(ON) (at VGS=10V) < 630mΩ 2. SOURCE RDS(ON) (at VGS=4.5V) < 720mΩ 3. DRAIN D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead www.umw-ic.com Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s V 4 PD TA=70°C ±20 0.8 IDM TA=25°C B Units V 1 ID TA=70°C C Maximum 100 Typ 70 100 63 RθJA RθJL 1 Max 90 125 80 Units °C/W °C/W °C/W 友台半导体有限公司 UMW R UMW AO3442A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V 1 TJ=55°C 5 nA 2.9 V 514 630 983 1200 VGS=4.5V, ID=0.8A 554 720 4 TJ=125°C A gFS Forward Transconductance VDS=5V, ID=1A 2.8 VSD Diode Forward Voltage IS=1A,VGS=0V 0.9 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA ±100 Static Drain-Source On-Resistance Output Capacitance Units 2.3 1.7 VGS=10V, ID=1A Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz mΩ mΩ S 1.2 V 1 A 100 pF 13 pF 5 pF 5 7.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 2.8 6 nC Qg(4.5V) Total Gate Charge 1.5 3 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=1A 2.5 0.4 nC 0.8 nC 5 ns VGS=10V, VDS=50V, RL=50 =50Ω, Ω, RGEN=3Ω 4 ns 12 ns 5 ns IF=5.6A, dI/dt=100A/µs 52 Body Diode Reverse Recovery Charge IF=5.6A, dI/dt=100A/µs 60 ns nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using