BC817-40

BC817 NPN Silicon Epitaxial Planar Transistors 62 7      )($785(6 z z z z z For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA  (/(&75,&$/&+$5$&7(5,67,&67a ℃XQOHVVRWKHUZLVHVSHFLILHG           3DUDPHWHU  6\PERO   7HVW FRQGLWLRQV  0in Typ  0ax Unit &ROOHFWRUEDVHEUHDNGRZQYROWDJH VCBO IC= 10μA, IE=0 50 V &ROOHFWRUHPLWWHUEUHDNGRZQYROWDJH VCEO IC= 10mA, IB=0 45 V (PLWWHUEDVHEUHDNGRZQYROWDJH VEBO IE= 1μA, IC=0 5 V &ROOHFWRUFXWRIIFXUUHQW ICBO VCB= 45 V , IE=0 0.1 μA (PLWWHUFXWRIIFXUUHQW IEBO VEB= 4V, IC=0 0.1 μA hFE(1) VCE= 1V, IC= 100mA 100 hFE(2) VCE= 1V, IC= 500mA 40 '&FXUUHQWJDLQ                        600 &ROOHFWRUHPLWWHUVDWXUDWLRQYROWDJH VCE(sat) IC= 500mA, IB= 50mA 0.7 V %DVHHPLWWHUVDWXUDWLRQYROWDJH VBE(sat) IC= 500mA, IB= 50mA 1.2 V 1.2 V %DVHHPLWWHUYROWDJH VBE VCE= 1 V, IC= 500mA &ROOHFWHUFDSDFWLDQFH Cob VCB=10V ,f=1MHz 7UDQVLWLRQIUHTXHQF\ fT VCE= 5 V, IC= 10mA f=100MHz 10 100 MHz  &/$66,),&$7,212) hFE 5DQN %& %& %& 5DQJH     www.slkormicro.com 1 pF BC817 Typical Characteristics 6WDWLF&KDUDFWHULVWLF 0.9mA 240 0.8mA IC 200 COMMON EMITTER Ta=25℃ o 0.7mA 0.6mA 160 0.5mA 120 0.4mA 0.3mA 80 Ta=100 C 400 DC CURRENT GAIN (mA) 1mA COLLECTOR CURRENT K)(²² ,& 500 hFE 280 300 o Ta=25 C 200 0.2mA 40 VCE= 1V IB=0.1mA 0 100 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE VCE 14 16 1 9%(VDW²² ,& BASE-EMITTER SATURATION VOLTAGE VBEsat (V) β=10 1.0 0.8 Ta=25℃ 0.6 Ta=100℃ 500 100 IC (mA) 9&(VDW²²,& 0.4 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1.2 10 COLLECTOR CURRENT (V) β=10 0.3 0.2 Ta=100℃ 0.1 0.4 Ta=25℃ 0.2 0.1 1 10 COLLECTOR CURRENT IC 0.0 0.1 500 100 10 100 COLLECTOR CURRENT ,&²²9%( 500 1 (mA) &RE&LE²² 100 IC 9&% /9(% f=1MHz IE=0 / IC=0 IC (mA) 50 o Ta=25 C (pF) 100 Cib C COLLECTOR CURRENT o CAPACITANCE Ta=100 C 10 Ta=25℃ 500 (mA) 10 1 Cob VCE=1V 0.1 0.3 1 0.4 0.5 0.6 0.7 BASE-EMITTER VOLTAGE I7²² 0.9 1.0 0 ,& (MHz) 100 10 V (V) 3F²²7D 0.4 TRANSITION FREQUENCY fT 5 REVERSE VOLTAGE VBE(V) COLLECTOR POWER DISSIPATION Pc (W) 300 0.8 0.3 0.2 0.1 VCE=5V o Ta=25 C 10 1 COLLECTOR CURRENT www.slkormicro.com 0.0 60 10 IC 0 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 (℃ ) 150 BC817 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.slkormicro.com 3 Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8°