DSK14

DSK12-DSK120 SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RANGE: 20 - 200V CURRENT: 1.0 A Features ! ! ! ! ! The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: B 250 C/10 seconds,0.375 ” (9.5mm) lead length, 5 lbs. (2.3kg) tension C E SOD-123FL Dim Min Max Typ A 3.58 3.72 3.65 3 B 2.72 2.78 2.75 C 1.77 1.83 1.80 D 1 1.02 1.08 1.05 E 0.097 1.03 1.00 H 0.13 0.17 0.15 L 0.53 0.57 0.55 All Dimensions in mm Mechanical Data ! Case: SOD-123FL plastic body over passivated junction ! Terminals : Plated axial leads, ! solderable per MIL-STD-750, Method 2026 D H L ! Polarity : Color band denotes cathode end ! Mounting Position : Any E ! Weight:0.0007 ounce, 0.02 grams A Maximum Ratings and Electrical Characteristics TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol DSK12 DSK13 DSK14 DSK15 DSK16 DSK17 DSK18 DSK19 DSK110 DSK115 DSK120 Unit Characteristic Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 70 80 90 100 150 200 V Maximum RMS voltage VRMS 14 21 28 35 42 49 56 63 70 105 140 V Maximum DC blocking voltage VDC 20 30 40 50 60 70 80 90 100 150 200 V Maximum average forward rectified current I(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 25.0 A Maximum instantaneous forward voltage at 1.0A VF Maximum DC reverse current at rated DC blocking voltage IR TA=25 C TA=100 C CJ Operating junction temperature range TJ 0.5 TSTG 1 mA pF -65 to +150 -65 to +150 V 2.0 80 -65 to +125 0.95 0.2 5.0 110 Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. www.slkormicro.com 0.85 10.0 Typical junction capacitance (NOTE 1) Storage temperature range 0.70 0.55 C C PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES DSK12-DSK120 FIG. 1- FORWARD CURRENT DERATING CURVE 1 0.8 Single Phase Half Wave 60Hz Resistive or inductive Load 0.6 0.4 DSK12-DSK16 DSK17-DSK120 0.2 0 0 25 50 75 100 125 150 FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 25 20 15 10 5.0 175 0 1 FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10 1 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE DSK12-DSK14 DSK15-DSK16 DSK17-DSK115 DSK120 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.1 100 10 TJ=100 C 1 TJ=75 C 0.1 JUNCTION CAPACITANCE, pF FIG. 5-TYPICAL JUNCTION CAPACITANCE 1000 DSK12-DSK14 DSK15-DSK120 100 TJ=25 C 10 10 100 REVERSE VOLTAGE,VOLTS www.slkormicro.com TJ=25 C 0.01 0 20 40 60 80 PERCENT OF PEAK REVERSE VOLTAGE,% 2000 1.0 100 FIG. 4-TYPICAL REVERSE CHARACTERISTICS 0.001 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0.1 10 NUMBER OF CYCLES AT 60 Hz INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES AMBIENT TEMPERATURE, C 2 100