SI2305

SI2305 SOT-23 Plastic-Encapsulate MOSFETS -12V P-Channel MOSFET V(BR)DSS SOT-23 37mΩ@ -4.5V -12V 3 ID Max RDS(on)Typ -4.2A 40mΩ@ -3.3V 1. GATE 2. SOURCE 1 3. DRAIN 2 APPLICATION Load Switch for Portable Devices z DC/DC Converter z Features Trench FET Power MOSFET MARKING Equivalent circuit D S5 G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) 330 3000 203×203×195 45000 7' Carton Size Q'TY/Carton (mm) (pcs) 438×438×220 180000 Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±10 TA = 25 oC T = 70oC Continuous Drain Current Maximum Power Dissipation TA = 25 C T = 70oC 2) Junction-to-Ambient Thermal Resistance (PCB mounted) 2) A -16.8 1.25 PD W 1.0 A Operating Junction and Storage Temperature Range A -2.8 IDM o V -4.2 ID A Pulsed Drain Current 1) Unit TJ, Tstg -50 to 150 RthJA 100 o C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. The above data are for reference only. DN:T19B30A0 http://www.microdiode.com Rev:2019A0 Page :1 SI2305 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max -0.6 -1 Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 Gate-source leakage IGSS VDS =0V, VGS =±10V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1 µA Drain-source on-state resistance Forward transconductance a a RDS(on) gfs VGS =-4.5V, ID =-4A 37 48 VGS =-3.3V, ID =-3.0A 40 55 VGS =-2.5V, ID =-2.0A 45 60 VDS =-5V, ID =-2.8A 6.5 V mΩ S b Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf 760 VDS =-10V,VGS =0V,f =1MHz pF 94 76 VDS =-10V,VGS =-4.5V,ID =-3A 7.8 nC 0.9 VDS =-10V,VGS =-4.5V,ID =-3A 1.8 5.5 VDD=-10V, RL=1.2Ω, 3.9 ID =-2A, ns 11.3 VGEN=-4.5V,Rg=3.3Ω 36 Drain-source body diode characteristics Continuous source-drain diode current Body diode voltage a) b) IS VSD TC=25℃ IS=-4A -0.87 -2.0 A -1.2 V Pulse test: pulse width ≤ 300us, duty cycle≤ 2% Guaranteed by design, not subject to production testing http://www.microdiode.com Rev:2019A0 Page :2 SI2305 -ID, Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) Typical Characteristics -VDS, Drain -Source Voltage (V) Fig2. Normalized Threshold Voltage Vs. Temperature Rdson, On -Resistance (mΩ)) -ID, Drain-Source Current (A) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig3. Typical Transfer Characteristics Fig4. On-Resistance vs. Drain Current and Gate Voltage -ID - Drain Current (A) -ID , Drain Current (A) -ISD, Reverse Drain Current (A) -VGS, Gate -Source Voltage (V) -VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage http://www.microdiode.com -VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area Rev:2019A0 Page :3 SI2305 C, Capacitance (pF) -VGS, Gate-Source Voltage (V) Typical Characteristics -VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms http://www.microdiode.com Rev:2019A0 Page :4 SI2305 Outlitne Drawing SOT-23 Package Outline Dimensions e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 1.00 1.40 0.10 0.50 0.35 0.20 0.10 2.70 2.90 3.10 1.60 1.40 2.4 2.80 1.90 0.10 0.30 0.4 0° 10° Note: 1. Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2019A0 Page :5