TSM2309CX
60V P-Channel Power MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
Key Parameter Performance
Note:
RDS(on) (max)
Parameter
Value
Unit
VDS
-60
V
MSL 1 (Moisture Sensitivity Level)
per J-STD-020
VGS = -10V
190
VGS = -4.5V
240
Qg
TSM2309CX RFG
8.2
nC
Block Diagram
Ordering Information
Ordering code
mΩ
Package
Packing
SOT-23
3kpcs / 7” Reel
TSM2309CX RKG
SOT-23
10kpcs / 13” Reel
Note: Halogen-free according to IEC 61249-2-21 definition
P-Channel MOSFET
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-60
V
Gate-Source Voltage
VGS
±20
V
-3.1
A
-2
A
IDM
-12.4
A
Power Dissipation @ TC = 25°C
PD
1.56
W
Operating Junction Temperature
TJ
150
°C
TSTG
-50 to +150
°C
Symbol
Limit
Unit
RӨJA
80
°C/W
Parameter
Continuous Drain Current
Pulsed Drain Current
Tc=25°C
ID
Tc=100°C
(Note 1)
Storage Temperature Range
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
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Version: C1907
TSM2309CX
60V P-Channel Power MOSFET
Electrical Specifications (TC = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
-60
--
--
V
--
160
190
--
200
240
-1.2
-1.9
-2.5
--
--
-1
--
--
-10
IGSS
--
--
±100
nA
gfs
--
3.5
--
S
Qg
--
8.2
--
Qgs
--
1.8
--
Qgd
--
1.5
--
Ciss
--
425
--
Coss
--
35
--
Crss
--
20
--
td(on)
--
5.2
--
tr
--
19
--
td(off)
--
35
--
tf
--
10.6
--
IS
--
--
-3.1
A
ISM
--
--
-12.4
A
VSD
--
--
-1
V
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
VGS = 0V, ID = -250µA
VGS = -10V, ID = -3A
VGS = -4.5V, ID = -1.5A
VDS = VGS, ID = -250µA
VDS = -60V VGS = 0V
VDS = -48V TJ = 125°C
Gate Body Leakage
VGS = ±20V, VDS = 0V
Forward Transconductance
VDS = -10V, ID = -3A
RDS(on)
VGS(TH)
IDSS
mΩ
V
µA
Dynamic
(Note 2,3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2,3)
(Note 2,3)
VDS = -30V ID = -3A,
VGS = -10V
Input Capacitance
VDS = -30V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
nC
pF
Switching
Turn-On Delay Time
Turn-On Rise Time
(Note 2,3)
Turn-Off Delay Time
Turn-Off Fall Time
(Note 2,3)
(Note 2,3)
VDD = -30V, ID = -1A,
VGS = -10V, RGEN = 6Ω
(Note 2,3)
ns
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Integral reverse diode in
Maximum Pulse Drain-Source Diode
the MOSFET
Forward Current
Diode-Source Forward Voltage
VGS = 0V, IS = -1A
Note:
1.
Pulse width limited by safe operating area
2.
Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
3.
Switching time is essentially independent of operating temperature.
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Version: C1907
TSM2309CX
60V P-Channel Power MOSFET
Electrical Characteristics Curve
Gate Charge
-VGS, Gate to Source Voltage (V)
-ID, Continuous Drain Current (A)
Continuous Drain Current vs. T C
Qg, Gate Charge (nC)
On-Resistance vs. Junction Temperature
Threshold Voltage vs. Junction Temperature
Normalized On Resistance
Normalized Gate Threshold Voltage
TC, Case Temperature (°C)
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Normalized Thermal Transient Impedance Curve
-ID, Drain Current (A)
Normalized Thermal Response (RθJC)
Maximum Safe Operating Area
Square Wave Pulse Duration (s)
-VDS, Drain to Source Voltage (V)
3/5
Version: C1907
TSM2309CX
60V P-Channel Power MOSFET
SOT-23 Mechanical Drawing
Unit: Millimeters
SUGGESTED PAD LAYOUT (Unit: Millimeters)
Marking Diagram
09 = Device Code
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
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Version: C1907
TSM2309CX
60V P-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
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Version: C1907