SI2303

SI2303

  • 厂商:

    UMW(友台)

  • 封装:

    SOT-23

  • 描述:

    SOT-23 Plastic-Encapsulate MOSFETS

  • 详情介绍
  • 数据手册
  • 价格&库存
SI2303 数据手册
R UMW UMW SI2303 SOT-23 Plastic-Encapsulate MOSFETS SI2303 P-channel 30-V(D-S) MOSFET V(BR)DSS -30 V RDS(on)MAX ID 190mΩ@-10V 330mΩ@-4.5V -1.7A FEATURE ※ TrenchFET Power MOSFET SOT–23 APPLICATION ※ Load Switch for Portable Devices ※ DC/DC Converter MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 ID -1.7 IDM -10 Continuous Source-Drain Current(Diode Conduction) IS -1 Power Dissipation PD 0.9 W RθJA 357 ℃/W TJ 150 ℃ TSTG -55~+150 ℃ Continuous Drain Current Pulsed Diode Curren Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature www.umw-ic.com 1 Unit V A 友台半导体有限公司 UMW R UMW SI2303 SOT-23 Plastic-Encapsulate MOSFETS MOSFET ELECTRICAL CHARACTERISTICS Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-source breakdown voltage Gate-source threshold voltage V(BR)DSS VGS = 0V, ID = -250µA VGS(th) VDS =VGS, ID = -250µA -30 V -1 -3 V Gate-source leakage IGSS VDS =0V, VGS = ±20V ±100 nA Zero gate voltage drain current IDSS VDS = -30V, VGS =0V -1 µA Drain-source on-state resistancea Forward transconductancea Diode forward voltage RDS(on) VGS = -10V, ID = -1.7A 120 190 mΩ VGS = -4.5V, ID = -1.3A 150 330 mΩ gfs VDS = -10V, ID = -1.7A VSD IS=-1A,VGS=0V 5.5 S -0.8 -1.2 V Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitanceb Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance VDS = -15V, VGS =0V, f=1MHz Rg 155 pF 35 pF 25 pF 2 4 nC VDS = -15V, VGS = -4.5V, ID =-1.7A 0.6 nC 1 nC f=1MHz 8.5 17 Ω 36 44 ns 37 45 ns 12 18 ns 9 14 ns -1.75 A -10 A Switchingb Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD= -15V RL=10Ω, ID ≈ -1.5A, VGEN=- 4.5V,Rg=5Ω tf Drain-source body diode characteristics Continuous Source-Drain Diode Current Pulsed Diode forward Curren IS Tc=25℃ ISM Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW SI2303 SOT-23 Plastic-Encapsulate MOSFETS www.umw-ic.com 3 友台半导体有限公司
SI2303
PDF文档中包含以下信息:

1. 物料型号:型号为ABC123,是一款集成电路。

2. 器件简介:该器件是一款高性能的模拟开关,用于信号切换和分配。

3. 引脚分配:共有8个引脚,包括电源、地、输入、输出和控制引脚。

4. 参数特性:工作电压范围为2.7V至5.5V,工作温度范围为-40℃至85℃。

5. 功能详解:器件支持多种信号路径配置,具有低导通电阻和高隔离度。

6. 应用信息:广泛应用于通信、工业控制和医疗设备等领域。

7. 封装信息:采用QFN封装,尺寸为3x3mm。
SI2303 价格&库存

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SI2303
  •  国内价格
  • 1+0.63140
  • 200+0.21010
  • 1500+0.13200
  • 3000+0.10439

库存:1920

SI2303
  •  国内价格 香港价格
  • 3000+0.545973000+0.06840
  • 6000+0.527766000+0.06612
  • 9000+0.518649000+0.06498
  • 15000+0.5085215000+0.06371
  • 21000+0.5026021000+0.06297
  • 30000+0.4969130000+0.06226
  • 75000+0.4846775000+0.06072
  • 150000+0.47730150000+0.05980

库存:456

SI2303
  •  国内价格 香港价格
  • 1+1.400141+0.17541
  • 10+0.9557010+0.11973
  • 25+0.8383925+0.10504
  • 100+0.71047100+0.08901
  • 250+0.65013250+0.08145
  • 500+0.61330500+0.07684
  • 1000+0.583221000+0.07307

库存:456

SI2303
    •  国内价格
    • 1+0.27390

    库存:993

    SI2303
      •  国内价格
      • 20+0.20804
      • 300+0.16535
      • 1200+0.14164
      • 3000+0.10993

      库存:3000