SI2303

R UMW UMW SI2303 SOT-23 Plastic-Encapsulate MOSFETS SI2303 P-channel 30-V(D-S) MOSFET V(BR)DSS -30 V RDS(on)MAX ID 190mΩ@-10V 330mΩ@-4.5V -1.7A FEATURE ※ TrenchFET Power MOSFET SOT–23 APPLICATION ※ Load Switch for Portable Devices ※ DC/DC Converter MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 ID -1.7 IDM -10 Continuous Source-Drain Current(Diode Conduction) IS -1 Power Dissipation PD 0.9 W RθJA 357 ℃/W TJ 150 ℃ TSTG -55~+150 ℃ Continuous Drain Current Pulsed Diode Curren Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature www.umw-ic.com 1 Unit V A 友台半导体有限公司 UMW R UMW SI2303 SOT-23 Plastic-Encapsulate MOSFETS MOSFET ELECTRICAL CHARACTERISTICS Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-source breakdown voltage Gate-source threshold voltage V(BR)DSS VGS = 0V, ID = -250µA VGS(th) VDS =VGS, ID = -250µA -30 V -1 -3 V Gate-source leakage IGSS VDS =0V, VGS = ±20V ±100 nA Zero gate voltage drain current IDSS VDS = -30V, VGS =0V -1 µA Drain-source on-state resistancea Forward transconductancea Diode forward voltage RDS(on) VGS = -10V, ID = -1.7A 120 190 mΩ VGS = -4.5V, ID = -1.3A 150 330 mΩ gfs VDS = -10V, ID = -1.7A VSD IS=-1A,VGS=0V 5.5 S -0.8 -1.2 V Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitanceb Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance VDS = -15V, VGS =0V, f=1MHz Rg 155 pF 35 pF 25 pF 2 4 nC VDS = -15V, VGS = -4.5V, ID =-1.7A 0.6 nC 1 nC f=1MHz 8.5 17 Ω 36 44 ns 37 45 ns 12 18 ns 9 14 ns -1.75 A -10 A Switchingb Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD= -15V RL=10Ω, ID ≈ -1.5A, VGEN=- 4.5V,Rg=5Ω tf Drain-source body diode characteristics Continuous Source-Drain Diode Current Pulsed Diode forward Curren IS Tc=25℃ ISM Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW SI2303 SOT-23 Plastic-Encapsulate MOSFETS www.umw-ic.com 3 友台半导体有限公司