8050DU

8050U NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. Absolute Maximum Ratings (Ta = 25℃) Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation Ptot 625 mW Tj 150 ℃ TStg - 55 to + 150 ℃ Parameter Junction Temperature Storage Temperature Range Characteristics at Ta = 25℃ Parameter DC Current Gain at VCE = 1 V, IC = 5 mA at VCE = 1 V, IC = 100 mA Symbol Min. Typ. Max. Unit hFE hFE hFE hFE 45 120 160 40 - 200 300 - - ICBO - - 100 nA IEBO - - 100 nA V(BR)CBO 40 - - V V(BR)CEO 25 - - V V(BR)EBO 6 - - V VCE(sat) - - 0.5 V VBE(sat) - - 1.2 V VBE - - 1 V fT 100 - - MHz COB - 9 - pF Current Gain Group C D at VCE = 1 V, IC = 800 mA Collector Base Cutoff Current at VCB = 35 V Emitter Base Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA Base Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA Base Emitter Voltage at IC = 10 mA, VCE = 1 V Gain Bandwidth Product at VCE = 10 V, IC = 50 mA Collector Base Capacitance at VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. ® Dated: 24/03/2016 Rev: 02 8050U SEMTECH ELECTRONICS LTD. ® Dated: 24/03/2016 Rev: 02 8050U SOT-89 PACKAGE OUTLINE Dimensions in mm SEMTECH ELECTRONICS LTD. ® Dated: 24/03/2016 Rev: 02