SK3407

AO3407 P-Channel Enhancement Mode MOSFET Feature  -30V/-4.1A, RDS(ON) =80mΩ(MAX) @VGS = -10V. RDS(ON) = 100mΩ(MAX) @VGS = -4.5V. .  Super High dense cell design for extremely low RDS(ON)  Reliable and Rugged  SC-59 for Surface Mount Package SOT-59 Applications ● Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=25℃ Unless Otherwise noted Parameter Symbol Limit Units VDS VGS ID -30 ±20 -4.1 V V A Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Electrical Characteristics Parameter Off Characteristics Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse TA=25℃ Unless Otherwise noted Symbol Test Conditions Min Typ. Max Units BVDSS VGS=0V, ID=-250μA -30 - - V IDSS VDS=-30V, VGS=0V - - -1 μA IGSSF IGSSR VGS=20V, VDS=0V VGS=-20V, VDS=0V - - 100 -100 nA nA VGS(th) VGS= VDS, ID=-250µA -1.0 - -3.0 V VGS =-10V, ID =-4.1A - 65 80 mΩ VGS =-4.5V, ID =-4.0A - 85 100 mΩ -1.2 V On Characteristics Gate Threshold Voltage Static Drain-source On-Resistance RDS(ON) Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS =0V, IS=-1.0A 1 of 4 AO3407 Typical Characteristics 2 of 4 AO3407 Typical Characteristics 3 of 4 AO3407 Package Outline Dimensions (UNIT: mm) SC-59 4 of 4