1N4148WS T4

1N4148WS Silicon Epitaxial Planar Switching Diode Features • SOD-323 package PINNING DESCRIPTION PIN • Fast switching • These diodes are also available in other case style including the DO-35 case with the type designation 1N4148, the MiniMELF case with the type designation LL4148 and the MicroMELF case with the type designation MCL4148. 1 Cathode 2 Anode 2 1 W2 T4 Top View Marking Code: "W2" T4 Simplified outline SOD-323 and symbol MARKING:T4 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V Average Rectified Forward Current IF(AV) 150 mA Surge Forward Current (t < 1 s, Tj = 25 OC) IFSM 350 mA Power Dissipation Ptot 200 mW Thermal Resistance from Junction to Ambient Air RθJA 625 Tj 150 O Tstg - 65 to + 150 O Junction Temperature Storage Temperature Range C/W O C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Peak Reverse Current at VR = 75 V at VR = 20 V at VR = 75 V, TJ = 150 OC at VR = 25 V, TJ = 150 OC Symbol VF IR Min. Max. Unit - 0.715 0.855 1 1.25 V - 1 25 50 30 µA nA µA µA Total Capacitance at VR = 0 V, f = 1 MHz CT - 2 pF Reverse Recovery Time at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 Ω trr - 4 ns Page 1 of 3 2/23/2012 Dynamic forward resistance vs. forward current Forward characteristics 4 3 10 2 2 3 10 5 10 Tj=25 C f=1kHz 10 ) Tj=100 C Tj=25 C rF ( I F ( m A) 5 10 1 2 2 10 5 2 10 -2 10 5 2 10-1 1 0 1 2 -2 10 10-1 1 VF (V) 102 10 I F (mA) Reverse capacitance vs. reverse voltage Amissible repetitive peak forward current vs. pulse duration Tj=25 C f=1MHz 1.1 100 5 4 3 2 10 I FRM (A) Ctot (VR) Ctot (0 V) 1.0 0.9 0.8 2 4 6 VR (V) Page 2 of 3 1 V=0 0.1 0.2 0.5 5 4 3 2 0.7 0 5 4 3 2 8 10 0.1 -5 10 2 5 -4 10 2 5 10-3 2 5 -2 2 10 5 -1 10 2 5 1 tp (s) 2/23/2012 2 5 10 PACKAGE OUTLINE Plastic surface mounted package; 2 leads Page 3 of 3 SOD-323 2/23/2012