S9014T

S9014T SOT-523 Plastic-Encapsulate Transistors S9014T TRANSISTOR (NPN) SOT–523 FEATURES  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V 1. BASE 2. EMITTER 3. COLLECTOR IC Collector Current 100 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=100µA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 100 nA Collector cut-off current ICEO VCE=35V, IB=0 100 nA Emitter cut-off current IEBO VEB=4V, IC=0 100 nA DC current gain hFE VCE=5V, IC=1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=5mA 1 V 0.7 V Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob VCE=5V, IC=2mA 0.58 VCE=5V,IC=10mA , f=30MHz 150 VCB=10V, IE=0, f=1MHz 3.5 CLASSIFICATION OF hFE REV.08 RANK L H RANGE 200–450 450–1000 MARKING J6 J7 1 of 3 MHz pF S9014T hFE Static Characteristic 1000 COMMON EMITTER Ta=25℃ 20uA 6 18uA 16uA 14uA 4 12uA 10uA 8uA 2 —— IC Ta=100℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 8 6uA Ta=25℃ 100 4uA COMMON EMITTER VCE= 5V IB=2uA 0 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VCEsat —— 8 1 (V) 10 COLLECTOR CURRENT IC VBEsat —— IC 100 (mA) IC 2 1 0.1 Ta=25℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1 VCE 10 0.1 Ta=100℃ Ta=25℃ Ta=100℃ β=20 β=20 1 10 COLLECTOR CURRENT IC COLLECTOR CURRENT IC (mA) 100 IC —— VBE fT 1000 1 COMMON EMITTER VCE= 5V 0.3 0.6 Cob/ Cib —— —— IC 100 (mA) IC 100 10 COMMON EMITTER VCE=5V Ta=25℃ 0.9 1 0.1 1.2 1 BASE-EMMITER VOLTAGE VBE (V) 100 10 COLLECTOR CURRENT Ta=25℃ 0.1 0.0 1 (mA) Ta=100℃ 10 0.1 0.1 100 TRANSITION FREQUENCY fT (MHz) 0.01 0.1 10 COLLECTOR CURRENT VCB/ VEB PC 250 —— IC 100 (mA) Ta f=1MHz IE=0/IC=0 COLLECTOR POWER DISSIPATION PC (mW) CAPACITANCE C (pF) Ta=25 ℃ Cib 10 Cob 1 0.1 0.1 1 REVERSE VOLTAGE REV.08 10 VR 20 (V) 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 2 of 3 100 T 125 (℃ ) 150 S9014T REV.08 3 of 3