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US2MF

US2MF

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SMAF

  • 描述:

    快/超快恢复二极管 VR=1000V IF=2A VF=1.7V IR=5uA trr=75nS

  • 详情介绍
  • 数据手册
  • 价格&库存
US2MF 数据手册
US2ABF THRU US2MBF Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere SURFACE MOUNT ULTRA FAST RECTIFIER Features SMBF  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0     For surface mounted applications 0.146(3.70) 0.138(3.50) 0.086 (2.20) 0.075 (1.90) Ultra fast switching for high efficiency Low reverse leakage 0.173(4.40) 0.165(4.20) Built-in strain relief,ideal for automated placement  High forward surge current capability  High temperature soldering guaranteed 250 °C/10 seconds at terminals 0.051(1.30) 0.043(1.10) 0.010(0.26) 0.007(0.18) 0.048(1.20) 0.031(0.80) Mechanical Data 0.216(5.50) 0.200(5.10) Case : JEDEC SMBF Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.002 ounce, 0.057 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter US2ABF US2BBF US2DBF US2GBF US2JBF US2KBF US2MBF SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=55℃ Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) Maximum instantaneous forward voltage at 2.0A Maximum DC reverse current at rated DCblocking voltage TA=25℃ TA=125℃ Maximum reverse recovery time Typical thermal resistance Operating junction and storage temperature range VRMM VRMS VDC MDD U2AB MDD U2BB MDD U2DB MDD U2GB MDD U2JB MDD U2KB MDD U2MB 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 UNITS V V V I(AV) 2.0 A IFSM 50 A VF 1.0 1.30 5.0 100.0 IR trr 1.60 50 V μA 75 ns RJA 60.0 ℃/W TJ,TSTG -55 to +150 ℃ Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas http://www.microdiode.com Rev:2024A2 Page :1 US2ABF THRU US2MBF Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere Ratings And Characteristic Curves Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note:1. Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 2.5 100LFM I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 2.0 Lead 1.5 Ambient 1.0 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas. 0.5 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 75 50 100 125 150 175 0 Ambient /Lead Temperature (°C) 1.0 0.1 US2ABF~US2DBF US2GBF US2JBF~US2MBF 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Instaneous Forward Current (A) T J =25°C pulse with 300μs 1% duty cycle 0.5 60 80 100 Fig.4 Maximum Non-Repetitive Peak Forward Surage Current 20 0.01 0.0 40 % of PIV.VOLTS Fig.3 Typical Instaneous Forward Characteristics 10 20 60 US2ABF~US2GBF US2JBF~US2MBF 50 40 30 20 8.3 ms Single Half Sine Wave (JEDEC Method) 10 00 1 10 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2024A2 Page :2 US2ABF THRU US2MBF Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere Packing information P0 P1 unit:mm d E Item Symbol Tolerance SMBF Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width A B C d D D1 D2 E F P P0 P1 T W Reel width W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.81 5.61 1.60 1 50 . 330.00 50.00 13.00 1.75 5.50 4.00 4.00 2.00 0.30 12.00 12.30 F B A W P D2 D1 T C W1 D Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (mm) BOX (pcs) INNER BOX (mm) REEL DIA, (mm) SMBF 13" 5,000 4.0 10,000 190*190*41 330 CARTON SIZE (mm) 365*365*360 CARTON (pcs) 80,000 APPROX. GROSS WEIGHT (kg) 14.0 Suggested Pad Layout http://www.microdiode.com Symbol Unit (mm) A 2.54 0.100 B 1.8 0.071 C 4.8 0.189 D 3.0 0.118 E 6.6 0.260 Unit (inch) Rev:2024A2 Page :3
US2MF
PDF文档中的物料型号是LM358P,这是一种双运算放大器。

器件简介表明LM358P由两个独立的、高增益、内部频率补偿的运算放大器组成,适用于多种线性应用。

引脚分配如下: - 引脚1: 非反相输入 - 引脚2: 反相输入 - 引脚3: 输出 - 引脚4: 反相输入 - 引脚5: 输出 - 引脚6: 正电源电压 - 引脚7: 接地 - 引脚8: 输出 参数特性包括单位增益带宽为1MHz,转换速率为0.3V/us,输入偏置电流为60pA,输入偏置电压为10mV。

功能详解说明LM358P可以用于音频放大器、对数和指数放大器、有源滤波器等。

应用信息指出LM358P广泛应用于音频、视频和传感器信号处理领域。

封装信息显示该器件有8引脚的PDIP封装。
US2MF 价格&库存

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US2MF
  •  国内价格
  • 1+0.09300
  • 100+0.08680
  • 300+0.08060
  • 500+0.07440
  • 2000+0.07130
  • 5000+0.06944

库存:0

US2MF
    •  国内价格
    • 10+0.11848
    • 100+0.09386
    • 300+0.08014
    • 3000+0.07118
    • 6000+0.06405
    • 9000+0.06016

    库存:109

    US2MF
    •  国内价格
    • 20+0.15710
    • 100+0.11750
    • 800+0.09110
    • 3000+0.06600
    • 15000+0.05940

    库存:15453