2SC1623

UMW R UMW 2SC1623 SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES z High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA z High voltage:VCEO=50V 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Test conditions Parameter Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=1mA 90 200 600 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA,IB=10mA 1 V fT Transition frequency VCE=6V,IC=10mA 250 MHz CLASSIFICATION OF hFE Rank Range Marking www.umw-ic.com L4 L5 L6 L7 90-180 135-270 200-400 300-600 L4 L5 L6 L7 1 友台半导体有限公司 UMW R UMW 2SC1623 SOT-23 Plastic-Encapsulate Transistors Static Characteristic 4 COMMON EMITTER Ta=25℃ 10uA 3 IC 8uA 6uA 5uA 4uA 3uA 1 IC Ta=25℃ DC CURRENT GAIN 7uA 2 —— Ta=100℃ hFE (mA) 9uA COLLECTOR CURRENT hFE 1000 100 2uA COMMON EMITTER VCE= 6V IB=1uA 0 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VBEsat —— Ta=25℃ Ta=100 ℃ 10 COLLECTOR CURREMT IC IC Ta=100 ℃ Ta=25℃ IC β=10 10 0.1 100 1 10 COLLECTOR CURREMT (mA) VBE fT 1000 —— IC 100 (mA) IC T =2 a 5℃ TRANSITION FREQUENCY 10 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) —— 100 (mA) 100 β=10 1 100 —— 10 IC 300 1000 100 0.1 1 COLLECTOR CURRENT VCEsat IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 2000 10 0.1 8 VCE (V) 1 COMMON EMITTER VCE=6V 0.1 0.0 0.3 0.6 0.9 100 COMMON EMITTER VCE=6V Ta=25℃ 10 1.2 1 Cob/Cib 50 —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ 10 Cib C (pF) PC 250 f=1MHz IE=0/IC=0 CAPACITANCE 70 10 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) Cob 1 —— IC (mA) Ta 200 150 100 50 0 0.1 0.1 1 REVERSE VOLTAGE www.umw-ic.com 10 V 0 20 25 50 75 AMBIENT TEMPERATURE (V) 2 100 T a 125 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW 2SC1623 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司