8205A

UMW R 8205A Dual N-Channel Enhancement Power Mosfet General Description These This device uses advanced trench technology to provide excellent Rds(on),low gate charge and operation with gate voltages as low as 2.5V. Features VDS = 20V,ID =6A SOT23-6 top view RDS(ON),19.5mΩ(Typ) @ VGS =4.5V RDS(ON), 25mΩ(Typ) @ VGS =2.5V Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications Application Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 8205A 8205A SOT23-6 233mm 8mm 3000 Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V 6 A 4.8 A Drain Current-ContinuousNote3 TC=25℃ ID TC=70℃ Drain Current-PulsedNote1 IDM 24 A Avalanche Energy EAS 7.4 mJ PD 1.5 W TSTG -55 to +150 ℃ TJ -55 to +150 ℃ Note4 Maximum Power Dissipation TC=25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Parameter Symbol Min. Typ. Max Unit Thermal Resistance,Junction-to-Case RθJC - 14.4 - ℃/W Thermal Resistance, Junction-to-Ambient RθJA - 83 - ℃/W www.umw-ic.com 1 友台半导体有限公司 UMW R 8205A Electrical Characteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions VGS=0V,IDS=250uA Min. Typ. Max. Unit 20 - - V Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 uA Gate-Body Leakage IGSS VGS=±10V,VDS=0V - - ±100 nA ON CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Gate Threshold Voltage VGS(TH) VDS=VGS,IDS=250uA 0.5 0.7 1.2 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V,IDS=3A - 19.5 25 VGS=2.5V,IDS=3A - 25 31.5 Conditions Min. Typ. Max. - 466 - - 65 - - 58 - Min. Typ. Max. - 15 - - 17 - - 42 - - 10 - - 5.7 - - 0.8 - - 1.4 - mΩ DYNAMIC CHARACTERISTICS Parameter Symbol Input Capacitance CiSS Output Capacitance COSS Reverse Transfer Capacitance Crss VDS =10V, VGS = 0V, f=1MHz Unit pF SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Rise Time Symbol Td(on) tr Turn-Off Delay Time Fall Time Conditions VGS=4.5V,VDs=10V, RGEN=2.5Ω Td(off) ID=6A tf Total Gate Charge at 10V Qg Gate to Source Gate Charge Qgs Gate to Drain“Miller”Charge Qgd VDS=10V,IDS=6A, VGS=10V Unit ns nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Parameter Drain-Source Diode Forward Voltage Symbol Conditions Min. Typ. Max. Unit VSD VGS=0V,IDS=6A - - 1.2 V Notes: 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤ 2%. 4: EAS condition: VDD=20V,VG=10V,VGATE=20V,Start TJ=25℃. www.umw-ic.com 2 友台半导体有限公司 UMW R 8205A Typical Performance Characteristics www.umw-ic.com 3 友台半导体有限公司 UMW R www.umw-ic.com 8205A 4 友台半导体有限公司 UMW R www.umw-ic.com 8205A 5 友台半导体有限公司 UMW R 8205A SOT23-6 www.umw-ic.com 6 友台半导体有限公司