LPW5209B5F-21

Preliminary Datasheet LPW5209 2.1A Power Switch with Programmable Current Limit General Description The LPW5209 is an integrated power switch for Features  80mΩ Low RDS(ON), High-side N-MOSFET (USB) applications. A built-in charge pump is used to  2100mA Programmable current limit drive the N-Channel MOSFET that is free of parasitic  2.5V to 6V Input Voltage body diode to eliminate any reversed current flow  Low Quiescent Current:30μA across the switch when it is powered off. Its low  Soft Start Function  Built-In Short-Circuit Protection  Built-in Thermal Protection  RoHS Compliant and 100% Lead (Pb)-Free self-powered and bus-powered Universal Series Bus quiescent current (30μA) and small package (SOT23-5) is particularly suitable in battery-powered portable equipment. Several protection functions include soft start to limit inrush current during plug-in, current limiting at 2.1A to meet USB power requirement, and thermal shutdown Typical Application Circuit to protect damage under over current conditions. VIN LPW5209AB5F 5 VIN Order Information Ordering Number Current LPW5209AB5F Adjustable LPW5209B5F-21 2.1A LPW5209B5F-11 1.1A LPW5209B5F-06 600mA Package Cin 4 EN Marking  Battery Charger Circuits Shipping LPS C0YWX LPS LPW5209B5F-21 USB Device Riset 6.8K Marking Information Applications  Cout 3 SOT23-5 LPW5209AB5F Power Switch GND RSET VOUT 1 2 Device  VOUT C1YWX 3K/REEL LPS LPW5209B5F-11 C2YWX LPS LPW5209B5F-06 C3YWX Marking indication: Y:Production year W:Production week LPW5209-01 Jan.-2018 Email: marketing@lowpowersemi.com X:Production batch www.lowpowersemi.com Page 1 of 7 Preliminary Datasheet LPW5209 Functional Pin Description Package Type Pin Configurations Top View VOUT 1 GND 2 ISET/NC 3 5 VIN 4 EN SOT23-5 Pin Description Name Pin Description LPW5209A LPW5209-21/11/06 VOUT 1 1 Output to system pin. GND 2 2 Ground. ISET 3 NC Connect a resistor to GND for setting current limit. 3 No connecter EN 4 4 Device Enable (active High). VIN 5 5 Input pin. LPW5209-01 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 2 of 7 Preliminary Datasheet LPW5209 Function Block Diagram Absolute Maximum Ratings Note 1  Input Voltage to GND ----------------------------------------------------------------------------------------------------- 7V  Output Voltage to GND -------------------------------------------------------------------------------------------------- 7V  Other pin to GND ---------------------------------------------------------------------------------------------------------- 6V  Maximum Junction Temperature --------------------------------------------------------------------------------- 150°C  Operating Ambient Temperature Range (TA) -------------------------------------------------------- -40℃ to 85°C  Maximum Soldering Temperature (at leads, 10 sec) ------------------------------------------------------- Note 1. 260°C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Thermal Information  Maximum Power Dissipation (SOT23-5, PD, TA=25°C) ----------------------------------------------------- 0.45W  Thermal Resistance (SOT23-5, θJA) ------------------------------------------------------------------------- 250℃/W ESD Susceptibility  HBM(Human Body Mode) --------------------------------------------------------------------------------------------- 2KV  MM(Machine Mode) --------------------------------------------------------------------------------------------------- 200V LPW5209-01 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 3 of 7 Preliminary Datasheet LPW5209 Electrical Characteristics (Over recommended operating conditions unless specified otherwise, TA=25℃ ) Symbol Parameter VIN Input Voltage IOUT Output Current Limit Condition Min Typ 2.5 LPW5209AB5F,RISET=10K 680 LPW5209AB5F,RISET=6.8K 1000 LPW5209AB5F,RISET=3.4K 2000 LPW5209B5F-21 2100 LPW5209B5F-11 1100 LPW5209B5F-06 600 Max Units 6 V mA RDS(ON) Output N-MOSFET RDS(ON) Iout=1A 80 100 mΩ IQ Quiescent Current VIN=3V 30 50 µA ISHDN Shutdown Current VEN=GND 0.1 1 µA VEN(L) Enable Threshold Low 0.4 V VEN(H) Enable Threshold High IEN Input High Current OTP OTP-HYS LPW5209-01 1.4 5 µA Over temperature protection 150 ℃ Over temperature hysteresis 20 ℃ Jan.-2018 VIN=VEN=5.0V V Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 4 of 7 Preliminary Datasheet LPW5209 Typical Operating Characteristics RISET VS. Current Limit 2500 Current Limit(mA) 2000 1500 1000 500 0 0 5 10 15 20 25 RISET(K) LPW5209-01 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 5 of 7 Preliminary Datasheet LPW5209 Chip Enable Input Application Information The LPW5209 are single N-Channel MOSFET The switch will be disabled when the EN pin is in a high-side power switches with active-high enable logic low condition. During this condition, the input, optimized for self-powered and bus-powered internal circuit is turned off, reducing the supply Universal Serial Bus (USB) applications. The current to 0.1μA typical. The maximum guaranteed LPW5209 equipped with a charge pump circuitry to voltage for a logic low at the EN pin is 0.4V. A drive the internal NMOS switch; the switch's low minimum guaranteed voltage of 1.4V at the EN pin RDS(ON), will turn the LPW5209 back on. Floating the input 80mΩ, meets USB voltage drop may cause unpredictable operation. EN should not requirements. be allowed to go negative with respect to GND. The Input and Output VIN (input) is the power source connection to the internal circuitry and the drain of the MOSFET. EN pin may be directly tied to VIN to keep the part on. VOUT (output) is the source of the MOSFET. In a Soft Start for Hot Plug-In Applications typical application, current flows through the switch In order to eliminate the upstream voltage droop from VIN to VOUT toward the load. If VOUT is caused by the large inrush current during hot-plug greater than VIN, current will flow from VOUT to VIN events, the “soft-start” feature effectively isolates since the MOSFET is bidirectional when on. Unlike the power source from extremely large capacitive a normal MOSFET, there is no a parasitic body loads, diode between drain and source of the MOSFET, requirements. the LPW5209 prevents reverse current flow if VOUT Thermal Shutdown being externally forced to a higher voltage than VIN Thermal shutdown is employed to protect the device when the output disabled (VEN < 0.4V). from damage if the die temperature exceeds satisfying approximately the 150°C. USB If voltage enabled, the droop switch automatically restarts when the die temperature falls 20°C. The output will continue to cycle on and off until the device is disabled or the fault is removed. LPW5209-01 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 6 of 7 Preliminary Datasheet LPW5209 Packaging Information SOT23-5 LPW5209-01 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 7 of 7