ASDM4406S-R

ASDM4406S 30V N-Channel MOSFET Features Product Summary ●High Efficiency ●Low Dense Cell Design ●Advanced trench process technology ●improved dv/dt capability ●Reliable and Rugged VDS RDS(on),typ RDS(on),typ ID V mΩ VGS=10V 30 9 VGS=4.5V 11.3 mΩ 13 A Application ●Networking, ●LED Load Swtich lighting top view ASCEND SOP-8 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current TA=70°C Pulsed Drain Current Avalanche Current C C Avalanche energy L=0.1mH TA=25°C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead NOV 2018 Version1.0 Steady-State Steady-State V A IDM 52 IAS 13 A EAS 24 mJ 3.1 W 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s ±20 10.4 PD TA=70°C Units V 13 ID C Maximum 30 Typ 31 59 16 RθJA RθJL 1/8 °C Max 40 75 24 Units °C/W °C/W °C/W Ascend Semicondutor Co.,Ltd ASDM4406S 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 30 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.0 ID(ON) On state drain current VGS=10V, VDS=5V 100 30 TJ=85°C VGS=10V, ID=12A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V, ID=12A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Max VGS=10V, VDS=15V, ID=12A 1.4 µA ±100 nA 2.0 V A 9.0 11.5 14 17 11.3 14.0 45 0.75 mΩ mΩ S 1 V 4 A 610 760 910 pF 88 125 160 pF 40 70 100 pF 0.8 1.6 2.4 Ω 11 14 17 nC 5 6.6 8 nC 1.9 2.4 2.9 nC 1.8 3 4.2 nC 1.9 2.4 2.9 nC 1.8 3 4.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/µs 5.6 7 8 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs 6.4 8 9.6 VGS=4.5V, VDS=15V, ID=12A Units V VDS=30V, VGS=0V IDSS RDS(ON) Typ VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω 4.4 ns 9 ns 17 ns 6 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using