SI2302 2.9A

SI2302 SOT-23 Plastic-Encapsulate Transistors MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Value Units VDS Symbol Drain-Source voltage Parameter 20 V VGS Gate-Source voltage ±10 V ID Drain current PD Power Dissipation Tj Tstg 2.9 A 1 W Junction Temperature 150 ℃ Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 20 Gate-Threshold Voltage 0.5 Vth(GS) VDS= VGS, ID=250 uA Gate-body Leakage IGSS VDS=0V, VGS=±10V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V Drain-Source On-Resistance rDS(ON) Forward Trans conductance gfs TYP MAX UNIT V 0.75 1.2 V ±100 nA 1 uA VGS=2.5V, ID=2.5A 37 59 mΩ VGS=4.5V, ID=2.9A 30 45 mΩ VDS=5V, ID=2.9A 9.5 s Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 300 VDS=10V, VGS=0V, f=1MHz pF 120 80 Switching Capacitance Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time 10 VDD=10V, ID=2.9A, VGS=4.5V RGEN=6Ω tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V, ID=2.9A, VGS=4.5V, 15 nS 50 85 nS 17 45 nS 10 20 nS 4.0 10 nC 0.65 nC 1.2 nC Drain-Source Diode Characteristics Diode Forward Voltage VSD Diode Forward Current Is VGS=0V, IS=2.9A 1/2 0.75 1.2 V 2.9 A SI2302 Typical Characteristics 2/2