CI7N170SM

1700V N-Channel Silicon Carbide Power MOSFET CI7N170SM = 1700 V RDS(on) = 650 mΩ ID@25℃ = 7.0 A DS Features Package  High Blocking Voltage with Low On-Resistance  High Speed Switching with Low Capacitance  Easy to Parallel and Simple to Drive  Ultra-low Drain-gate capacitance Benefits  Higher System Efficiency  Reduced Cooling Requirements  Increased System Reliability  Increased System Switching Frequency Applications  Auxiliary Power Supplies  Switch Mode Power Supplies  High-voltage Capacitive Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax Drain-Source Voltage 1700 V VGS=0V, ID=100μA VGSmax Gate-Source Voltage -10/+25 V Absolute maximum values VGSop Gate-Source Voltage -5/+20 V Recommended operational values ID ID(pulse) PD TJ, TSTG 7.0 Continuous Drain Current 4.5 A VGS=20V, Tc=25℃ VGS=20V, Tc=100℃ Pulsed Drain Current 9.0 A Pulse width tp limited by TJmax Power Dissipation 62 W Tc=25℃, TJ=150℃ -55 to +150 ℃ Operating Junction and Storage Temperature www.tokmas.com Note 1700V N-Channel Silicon Carbide Power MOSFET CI7N170SM Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit 1700 / / V 2.0 2.6 4.0 / 1.8 / V Test Conditions VGS=0V, ID=100μA VDS=VGS, ID=1.0mA VDS=VGS, ID=1.0mA, TJ=150℃ IDSS Zero Gate Voltage Drain Current / 1 100 µA VDS=1700V, VGS=0V IGSS+ Gate-Source Leakage Current / 10 250 nA VDS=0V, VGS=25V IGSS- Gate-Source Leakage Current / 10 250 nA VDS=0V, VGS=-10V / 650 850 / 1300 / / 1.06 / / 1.14 / RDS(on) Drain-Source On-State Resistance gfs Transconductance Ciss Input Capacitance / 194 / Coss Output Capacitance / 13 / Crss Reverse Transfer Capacitance / 1.8 / Eoss Coss Stored Energy / 6.6 / EON Turn-On Switching Energy / 5 / EOFF Turn-Off Switching Energy / 9.2 / td(on) Turn-On Delay Time / 13.8 / Rise Time / 22.8 / Turn-Off Delay Time / 38 / Fall Time / 14 / Internal Gate Resistance / 18 / QGS Gate to Source Charge / 5.4 / QGD Gate to Drain Charge / 7.6 / QG Total Gate Charge / 23 / Typ. Max. 4.2 / 3.9 / tr td(off) tf RG(int) mΩ S VGS=20V, ID=2.0A, TJ=150℃ VDS=20 V, ID=2.0 A VDS=20V, ID=2.0A, TJ=150℃ mJ ns Ω Fig. 4,5,6 Fig. VDS=1000V 15,16 f=1MHz µJ Fig. 11 VGS=20V, ID=2.0A VGS=0V pF Note VAC=25mV VDS=1200V, VGS=-5V/20V ID=2.0A, RG(ext)=2.5Ω, L=100μH VDS=1200V, VGS=-5V/20V, ID=2.0A RG(ext)=2.5Ω, RL=20Ω f=1MHz, VAC=25mV VDS=1200V nC VGS=-5V/20V ID=2.0A Reverse Diode Characteristics Symbol VSD Parameter Diode Forward Voltage Unit V IS Continuous Diode Forward Current / 7.0 A trr Reverse Recover Time 25 / ns Qrr Reverse Recovery Charge 15 / nC Irrm Peak Reverse Recovery Current 2.8 / A Typ. Max. 1.8 / / 40 Test Conditions VGS=-5V, ISD=25A VGS=-5V, ISD=25A, TJ=150℃ Note Fig. 8,9,10 TC=25℃ VR=1200V, ISD=2.0A Thermal Characteristics Symbol Parameter RθJC Thermal Resistance from Junction to Case RθJA Thermal Resistance from Junction to Ambient www.tokmas.com Unit ℃/W Test Conditions Note 1700V N-Channel Silicon Carbide Power MOSFET CI7N170SM Typical Performance Figure 1. Output Characteristics TJ = -55 ºC Figure 3. Output Characteristics TJ = 150 ºC Figure 5. On-Resistance vs. Drain Current Figure 2. Output Characteristics TJ = 25 ºC Figure 4. Normalized On-Resistance vs. Temperature Figure 6. On-Resistance vs. Temperature For Various Temperatures For Various Gate Voltage www.tokmas.com 1700V N-Channel Silicon Carbide Power MOSFET CI7N170SM Typical Performance Figure 7. Transfer Characteristic for Figure 8. Body Diode Characteristic at -55 ºC Various Junction Temperatures Figure 9. Body Diode Characteristic at 25 ºC Figure 11. Threshold Voltage vs. Temperature Figure 10. Body Diode Characteristic at 150 ºC Figure 12. 3rd Quadrant Characteristic at -55 ºC www.tokmas.com 1700V N-Channel Silicon Carbide Power MOSFET CI7N170SM Typical Performance Figure 13. 3rd Quadrant Characteristic at 25 ºC Figure 14. 3rd Quadrant Characteristic at 150 ºC Figure 15. Capacitances vs. Drain-Source Figure 16. Capacitances vs. Drain-Source Voltage (0 - 200V) Figure 17. Gate Charge Characteristic Voltage (0 - 1000V) Figure 18. Output Capacitor Stored Energy www.tokmas.com 1700V N-Channel Silicon Carbide Power MOSFET Package Dimensions Package TO-247-3 www.tokmas.com CI7N170SM