NP2301AMR-G

NP2301A P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S G General Features D  VDS =-20V，ID =-2.8A RDS(ON)(Typ.)=75mΩ @VGS=-2.5V RDS(ON)(Typ.)=60mΩ @VGS=-4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Marking and pin assignment SOT-23-3L (TOP VIEW) D 3 Application   23AL PWM applications Load switch Package  SOT-23-3L 1 2 G S Ordering Information Part Number Storage Temperature Package Devices Per Reel NP2301AMR -55°C to +150°C SOT-23-3L 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS -20 V Gate-source voltage VGS ±12 V a Drain current-continuous @Tj=125℃ -pulse db ID -2.8 A IDM -11 A Drain-source Diode forward current Is -1.25 A Maximum power dissipation PD 1.2 W Operating junction Temperature range Tj -55—150 ℃ Rev.1.0 —Oct. 26. 2017 1 www.natlinear.com NP2301A Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF Characteristics Drain-source breakdown voltage BVDSS VGS=0V, ID=-250µA -20 - - V Zero gate voltage drain current IDSS VDS=-20V, VGS=0V - - -1 µA Gate-body leakage IGSS VDS=0V, VGS=±12V - - ±100 nA VDS=VGS, ID=-250µA -0.4 -0.65 -1.2 V VGS=-4.5V, ID=-2.8A - 60 80 VGS=-2.5V, ID=-2.8A - 75 120 VGS=-5V, ID=-5A - 5 - - 561 - - 61 - - 52 - - 12.5 - - 6.6 - - 113 - - 46.6 - - 6.1 - - 1.7 - - 1.2 - - -0.81 -1.2 ON Characteristics Gate threshold voltage VGS(th) Drain-source on-state resistance RDS(ON) Forward transconductance gfs mΩ S Dynamic Characteristics Input capacitance CISS Output capacitance COSS Reverse transfer capacitance CRSS VDS=-10V ,VGS=0V f=1.0MHz pF Switching Characteristics Turn-on delay time tD(ON) Rise time VDD=-10V ID=-2.8A VGEN=-4.5V RL=10ohm RGEN=-60ohm tr Turn-off delay time tD(OFF) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDS=-10V,ID=-3A VGS=-4.5V ns nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode forward voltage VSD VGS=0V,Is=-1.25A V Notes: a. surface mounted on FR4 board,t≤10sec b. pulse test: pulse width≤300μs,duty≤2% c. guaranteed by design, not subject to production testing Thermal Characteristics Thermal Resistance junction-to ambient Rev.1.0 —Oct. 26. 2017 Rth JA 2 100 ℃/W www.natlinear.com NP2301A Typical Performance Characteristics Rev.1.0 —Oct. 26. 2017 3 www.natlinear.com NP2301A Rev.1.0 —Oct. 26. 2017 4 www.natlinear.com NP2301A Package Information  SOT-23-3L θ D b E E1 L 0.2 e c Symbol Dimensions In Millimeters A A2 A1 e1 Dimensions In Inches Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° Rev.1.0 —Oct. 26. 2017 5 www.natlinear.com