LEGM75TD120E2H

Mar.2020 LEGM75TD120E2H IGBT Power Module Features: Applications: • VCE=1200V IC=75A • The inverter • Low VCE(sat) • Motor control and drives • VCEsat with positive temperature coefficient • Maximum junction temperature 150℃ • Isolation Type Package Package Type & Internal Circuit E2 Internal Circuit Maximum Rated Values（IGBT Inverter） Symbol Parameter Conditions Ratings Unit 1200 V Collector-emitter voltage VEC= 0 V,IC= 1 mA,Tvj= 25 ℃ Continuous Collector Current TC=100 ℃ 75 A ICRM Peak Collector Current ICRM= 2 IC 150 A VGES Gate-Emitter Voltage Tvj= 25 ℃ ±30 V Total Power Dissipation TC= 25 ℃,Tvjmax= 150 ℃ 350 W VCES IC Ptot Leading Energy Electronic Technology Co.,Ltd LEGM75TD120E2H : Preliminary 1/8 www.leadingenergy-tec.com Mar.2020 Characteristics Values (IGBT Inverter） Symbol Parameter Conditions Min. Typ. Max. Unit IC= 75 A, VGE= 15 V, Tvj= 25 ℃ 1.78 V IC= 75 A, VGE= 15 V, Tvj= 125 ℃ 1.97 V Gate Threshold Voltage IC= 5.0 mA,VCE= VGE,Tvj= 25 ℃ 5.8 V ICES Collector-Emitter Cut-off Current VCE=1200 V, VGE=0 V, Tvj=25 ℃ 1.2 mA IGES Gate-Emitter Leakage Current VCE= 0 V, VGE= 15 V, Tvj= 25 ℃ 410 nA td(on) Turn-on Delay Time, Inductive Load 110 ns Rise Time, Inductive Load 35 ns 270 ns 170 ns VCE(sat) VGE(th) tr Collector-Emitter Saturation Voltage IC= 75 A,VCE= 600 V td(off) tf Turn-off Delay Time, Inductive Load Fall Time, Inductive Load VGE =±15 V RG = 2 Ω Tvj = 25 ℃ Eon Turn-on Energy Loss per Pulse 1.9 mJ Eoff Energy Loss per Pulse 4.8 mJ td(on) Turn-on Delay Time, Inductive Load 110 ns Rise Time, Inductive Load 40 ns 320 ns 280 ns tr IC = 75 A,VCE = 600 V td(off) tf Turn-off Delay Time, Inductive Load Fall Time, Inductive Load VGE = ±15 V RG= 2 Ω Tvj= 125 ℃ Eon Turn-on Energy Loss per Pulse 2.4 mJ Eoff Energy Loss per Pulse 7.5 mJ RthJC Tvj op Thermal resistance, junction to case per IGBT Temperature under switching conditions -40 0.35 K/W 125 ℃ VGE ≤ 15 V, VCC = 600 V ISC SC data VCEmax = VCES -LsCE ·di/dt 400 A tP ≤ 10 µs, Tvj = 125 ℃ Leading Energy Electronic Technology Co.,Ltd LEGM75TD120E2H : Preliminary 2/8 www.leadingenergy-tec.com Mar.2020 Maximum Rated Values (Diode Inverter) Symbol Parameter Conditions Min. Typ. Max. Unit VRRM Repetitive Peak Reverse Voltage Tvj= 25 ℃ 1200 V IF Continuous DC Forward Current TC= 100 ℃ 75 A IFRM Repetitive Peak Forward Current tP= 1 ms 150 A I2t Value VR= 0 V, tP= 10 ms, Tvj= 125 ℃ 1200 A2 s I 2t Characteristic Values (Diode Inverter) Symbo l VF trr Parameter Conditions Min. Typ. Max. Unit IF= 75 A, VCE= 0 V, Tvj= 25 ℃ 1.79 V IF= 75 A, VCE= 0 V, Tvj= 125 ℃ 1.96 V 100 ns 15.6 uC 0.5 mJ 120 ns 23.4 uC 1.3 mJ Forward Voltage Reverse Recovery time IF= 75 A,VR= 600 V Qr Recovered Charge Erec Reverse Recovery Energy -di/dt = 2000 A/us Tvj = 25 ℃ trr Reverse Recovery time IF= 75A,VR= 600 V Qr Recovered Charge Erec Reverse Recovery Energy -di/dt = 2000 A/us Tvj = 125 ℃ RthJC Thermal resistance, junction to case Tvj op Temperature under switching conditions Leading Energy Electronic Technology Co.,Ltd LEGM75TD120E2H : Preliminary per Diode -40 3/8 0.65 K/W 125 ℃ www.leadingenergy-tec.com Mar.2020 NTC-Thermistor (Characteristic Values) Symbol Parameter Conditions R25 Rated resistance Tc= 25 ℃ ∆R/R Deviation of R100 Tc= 100 ℃ P25 Power dissipation Tc= 25 ℃ B25/50 B-value B25/100 B-value Min. Typ. Max. KΩ 5 -5 Unit 5 % 20 mW R2= R25exp[B25/50(1/T2-1/(298,15K))] 3380 K R2= R25exp[B25/100(1/T2-1/(298,15K))] 3450 K Module Characteristics Symbol Parameter Conditions Typ. Max. 2500 Unit Visol Isolation voltage Tstg Storage Temperature -40 150 ℃ F Mountig Force per Clamp 40 80 N G Weight of Module Leading Energy Electronic Technology Co.,Ltd LEGM75TD120E2H: Preliminary t= 1 min,f= 50 Hz Min. V 40 4/8 g www.leadingenergy-tec.com Mar.2020 Output characteristic of IGBT,Inverter(typical) IC= f (VCE) VGE = 15 V Switching losses IGBT,Inverter(typical) Eon = f (IC), Eoff = f (IC) VGE= ±15 V, RG= 2 Ω, VCE = 600 V 16 150 VCE, Tvj=25℃ VCE, Tvj=125℃ Eon, Tvj =25℃ Eon, Tvj =125℃ Eoff, Tvj =25℃ Eoff, Tvj =125℃ 14 125 12 100 E (mJ) IC (A) 10 75 8 6 50 4 25 2 0 0.5 0 1.0 1.5 2.0 VCE (V) 2.5 3.0 0 3.5 30 60 90 120 150 IC (A) Switching losses IGBT,Inverter(typical) RBSOA IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG) IC= f (VCE) VGE = ±15V, IC = 75A , VCE = 600V VGE = ±15V, RG = 50Ω, Tvj =125 ℃ 175 16 Eon, Tvj=25℃ Eon, Tvj=125℃ Eoff, Tvj=25℃ Eoff, Tvj=125℃ 14 150 12 125 IC Modul IC Chip 100 IC (A) E (mJ) 10 8 75 6 50 4 25 2 0 0 0 10 20 30 40 50 RG (Ω） Leading Energy Electronic Technology Co.,Ltd LEGM75TD120E2H: Preliminary 5/8 0 200 400 600 800 1000 1200 1400 VCE (V) www.leadingenergy-tec.com Mar.2020 Switching losses Diode, Inverter (typical) Erec = f (RG) IF = 75 A, VCE = 600 V Forward characteristic of Diode, Inverter (typical) IF = f (VF) 150 8 VF，Tvj=25℃ VF，Tvj=125℃ Erec, Tvj = 25℃ Erec, Tvj = 125℃ 7 125 6 100 E (mJ) IF (A) 5 75 4 3 50 2 25 1 0 0.0 0.5 1.0 1.5 VF (V) 2.0 2.5 0 0 3.0 5 10 15 20 25 RG (Ω) Switching losses Diode, Inverter (typical) Erec = f (IF) RG = 2 Ω, VCE = 600 V NTC-Thermistor-temperature characteristic (typical) R = f (T) 100k 11 Erec, Tvj=25℃ Erec, Tvj=125℃ 10 Rtyp 9 10k R (Ω) E (mj) 8 7 6 1k 5 4 100 3 0 30 60 90 120 150 20 40 60 80 100 120 140 160 TC (℃) IF (A) Leading Energy Electronic Technology Co.,Ltd LEGM75TD120E2H: Preliminary 0 6/8 www.leadingenergy-tec.com Mar.2020 Circuit Diagram P G3 G5 U V G2 G4 G6 E’U E’V EU G1 T1 T2 θ E’W EV W EW Package Dimensions (Dimensions in Millimeters) Leading Energy Electronic Technology Co.,Ltd LEGM75TD120E2H : Preliminary 7/8 www.leadingenergy-tec.com Mar.2020 DISCLAIMER ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABITILY, FUNCTION OR DESIGN OR OTHERWISE Leading Energy Electronic Technology Co.,Ltd LEGM75TD120E2H : Preliminary 8/8 www.leadingenergy-tec.com