XNG100B24TC1S5

Xiner XNG100B24TC1S5 1200V/100A IGBT Half-Bridge Module Features  High frequency operation  Low stray inductance  High reliability and Power density  Low switching loss and Vcesat 34mm Half-Bridge Module Applications     Welding machine UPS Industry Inverter Motor Control Circuit Diagram Vces=1200v Ic=100A@Tc=100℃ Package Outlines （Unit：mm） Shenzhen Invsemi Co., Ltd Xiner XNG100B24TC1S5 IGBT Absolute Max Ratings Symbol VCES Parameter Collector-to-Emitter Voltage Condition Units Maximum TVJ=25 °C V 1200 IC Continuous DC collector current TC = 100°C,TVJ MAX=150 °C A 100 ICRM Repetitive peak collector current tp=1ms A 200 Ptotal Total power dissipation TC = 25°C,TVJ MAX=150 °C °C/W 463 VGES Gate-Emitter peak voltage V +/- 30 lGBT Characteristics Symbol Parameter Test conditions VGE=15V, VCE(sat) Collector-Emitter Saturation voltage IC=100A,TVJ=25°C VGE=15V, IC=100A,TVJ=125°C VGE(th) ICES Gate threshold voltage Collector-Emitter leakage current IGES Gate-Emitter leakage current Ciss Input capacitance Crss Reverse transfer capacitance Tdon Turn-on delay time, inductive load Tr Rise time, inductive load Eon Turn-on energy loss per pulse Tdoff Tf Turn-off delay time, inductive load Fall time, inductive load Eoff Turn-off energy loss per pulse ISC Short- circuit current RThJC TVJ OP Junction-Case Thermal resistance Temperature under switching VGE= VCE, ID = 3.3mA VCE=1200V, VGE = 0V,TVJ=25°C VCE=0V,VGE=20V,TVJ=25℃ VGE = 0V,VCE= 25V TVJ=25°C,ƒ = 1MHz VGE = 0V,VCE= 25V TVJ=25°C,ƒ = 1MHz VCE=600v, IC=100A Rg =10ohm, VGE = 15V VCE=600v, IC=100A Rg =10ohm, VGE = 15V VCE=600v, IC=100A Rg =10ohm, VGE = 15V VCE=600v, IC=100A Rg =10ohm, VGE = 15V VCE=600v, IC=100A Rg =10ohm, VGE = 15V VCE=600v, IC=100A Rg =10ohm, VGE = 15V Ta=25°C,VGE=15V, VCE=720V, tP=10us Units Min. Typ. Max. V — 1.90 2.2 V — 2.15 — V 5.2 - 6.8 mA — — 1 nA — — 100 nF — 6.9 — nF — 0.3 — nS — 40 — ns — 80 — mJ — 9.5 — nS — 240 — nS — 385 — mJ — 10.2 — A — 500 — K/W — — 0.27 °C -40 150 Shenzhen Invsemi Co., Ltd Xiner XNG100B24TC1S5 FRD Absolute Max Ratings Symbol Parameter Condition Units Maximum VRRM Repetitive peak reverse voltage TVJ=25 °C V 1200 IF Continuous DC forward current A 100 IFRM Repetitive peak forward current Tp=1ms A 200 VR=0V,Tp=10ms,TVJ=125 °C As 2 1580 2 It 2 I t Value FRD Characteristics Symbol VF Parameter Test conditions Units Min. Typ. Max. IF=100A,TVJ=25 °C V — 2.25 2.5 IF=100A,TVJ=125 °C V — 2.05 — A — 55 — uC — 3.2 — nS — 120 — mJ — 0.71 — A — 62 — uC — 4.5 — nS — 140 — mJ — 0.92 — K/W — — 0.5 °C -40 — 150 Forward voltage IRM Peak reverse recovery current Qr Recovery charge IF=100A,L=500uH， Vdc=600v,VGE=15V, Trr Reverse recovery energy Erec Reverse recovery energy IRM Peak reverse recovery current Qr Recovery charge Rg=10ohm, TVJ=25 °C IF=100A,L=500uH， Vdc=600v,VGE=15V, Trr Reverse recovery energy Erec Reverse recovery energy RThJC TVJ OP Junction-Case Thermal Resistance Temperature under switching Rg=10ohm, TVJ=125 °C Shenzhen Invsemi Co., Ltd