LEGM75BF120L5H

Mar.2020 LEGM75BF120L5H IGBT Power Module Features: Applications: • VCE=1200V IC=75A • The inverter • Low VCE(sat) • Motor control and drives • VCEsat with positive temperature coefficient • Maximum junction temperature 150℃ • Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated Values（IGBT Inverter） Symbol Parameter Conditions Ratings Unit 1200 V Collector-emitter voltage VEC= 0 V,IC=1 mA,Tvj= 25 ℃ Continuous Collector Current TC= 100 ℃ 75 A ICRM Peak Collector Current ICRM= 2 IC 150 A VGES Gate-Emitter Voltage Tvj= 25 ℃ ±30 V Total Power Dissipation TC= 25 ℃,Tvjmax= 150 ℃ 350 W VCES IC Ptot Leading Energy Electronic Technology Co.,Ltd LEGM75BF120L5H : Preliminary 1/12 www.leadingenergy-tec.com Mar.2020 Characteristics Values (IGBT Inverter） Symbol Parameter Conditions Min. Typ. Max. Unit IC= 75 A, VGE= 15 V, Tvj= 25 ℃ 1.78 V IC= 75 A, VGE= 15 V, Tvj= 125 ℃ 1.97 V Gate Threshold Voltage IC= 5.0 mA,VCE= VGE,Tvj= 25 ℃ 5.8 V ICES Collector-Emitter Cut-off Current VCE=1200 V, VGE=0 V, Tvj=25 ℃ 1.2 mA IGES Gate-Emitter Leakage Current VCE= 0 V, VGE= 15 V, Tvj= 25 ℃ 410 nA td(on) Turn-on Delay Time, Inductive Load 110 ns Rise Time, Inductive Load 35 ns 270 ns 170 ns VCE(sat) VGE(th) tr Collector-Emitter Saturation Voltage IC= 75 A,VCE= 600 V td(off) tf Turn-off Delay Time, Inductive Load Fall Time, Inductive Load VGE = ±15 V RG = 2 Ω Tvj = 25 ℃ Eon Turn-on Energy Loss per Pulse 1.9 mJ Eoff Energy Loss per Pulse 4.8 mJ td(on) Turn-on Delay Time, Inductive Load 110 ns Rise Time, Inductive Load 40 ns 320 ns 280 ns tr IC = 75 A,VCE = 600 V td(off) tf Turn-off Delay Time, Inductive Load Fall Time, Inductive Load VGE = ±15 V RG = 2 Ω Tvj= 125 ℃ Eon Turn-on Energy Loss per Pulse 2.4 mJ Eoff Energy Loss per Pulse 7.5 mJ RthJC Tvj op Thermal resistance, junction to case per IGBT Temperature under switching conditions -40 0.35 K/W 125 ℃ VGE ≤15 V, VCC = 600 V ISC SC data VCEmax = VCES -LsCE ·di/dt 400 A tP ≤ 10 µs, Tvj = 125 ℃ Leading Energy Electronic Technology Co.,Ltd LEGM75BF120L5H : Preliminary 2/12 www.leadingenergy-tec.com Mar.2020 Maximum Rated Values (Diode Inverter) Symbol Parameter Conditions Min. Typ. Max. Unit VRRM Repetitive Peak Reverse Voltage Tvj= 25 ℃ 1200 V IF Continuous DC Forward Current TC=100 ℃ 75 A IFRM Repetitive Peak Forward Current tP=1 ms 150 A I2t Value VR= 0 V, tP=10 ms, Tvj=125 ℃ 1200 A2s I2t Characteristic Values (Diode Inverter) Symbo l VF Parameter Conditions Min. Typ. Max. Unit IF= 75 A, VCE= 0 V, Tvj= 25 ℃ 1.79 V IF= 75 A, VCE= 0 V, Tvj= 125 ℃ 1.96 V 100 ns 15.6 uC 0.5 mJ 120 ns 23.4 uC 1.3 mJ Forward Voltage trr Reverse Recovery time Qr Recovered Charge Erec Reverse Recovery Energy IF= 75 A,VR= 600 V -di/dt = 2000 A/us Tvj = 25 ℃ trr Reverse Recovery time Qr Recovered Charge Erec Reverse Recovery Energy IF= 75A,VR= 600 V -di/dt = 2000 A/us Tvj = 125 ℃ RthJC Thermal resistance, junction to case Tvj op Temperature under switching conditions Leading Energy Electronic Technology Co.,Ltd LEGM75BF120L5H : Preliminary per Diode -40 3/12 0.65 K/W 125 ℃ www.leadingenergy-tec.com Mar.2020 Maximum Rated Values (Diode Rectifier) Symbol VRRM Parameter Tvj= 25 ℃ Min. Typ. Max. Unit 1800 V IFRMSM Maximum RMS forward current per chip Tc= 80 ℃ 75 A Maximum RMS current at rectifier chip Tc= 80 ℃ 100 A Surge forward current 600 A 1800 A2S 470 A 1100 A2S IRMSM IFSM Repetitive peak reverse voltage Conditions tp= 10ms Tvj=25 ℃ I2 t IFSM I2t-value Surge forward current tp= 10ms Tvj= 125 ℃ I2 t I2t-value Characteristic Values (Diode Rectifier) VF Forward voltage Tvj= 125 ℃ IF= 75 A 1.35 V IR Reverse current Tvj= 125 ℃ VR= 1800 V 1.3 mA Thermal resistance junction to case per diode 0.65 K/W Rthjc Leading Energy Electronic Technology Co.,Ltd LEGM75BF120L5H : Preliminary 4/12 www.leadingenergy-tec.com Mar.2020 Maximum Rated Values (IGBT Brake-Chopper) Symbol Parameter Conditions Collector-emitter voltage Tvj= 25 ℃ Continuous Collector Current ICRM VGES VCES IC Min. Typ. Max. Unit 1200 V TC = 100 ℃, Tvj max = 150 ℃ 75 A Peak Collector Current ICRM= 2IC 150 A Gate-Emitter Voltage Tvj= 25 ℃ -20 20 V Max. Unit Characteristic Values (IGBT Brake-Chopper) Symbol Parameter VCE(sat) Collector-Emitter Saturation Voltage VGE(th) Gate Threshold Voltage Conditions Min. Typ. IC= 50 A, VGE=15 V, Tvj= 25 ℃ 1.54 V IC= 50 A, VGE=15 V, Tvj= 125 ℃ 1.65 V IC= 5.0 mA,VCE=VGE,Tvj= 25 ℃ 5.8 V ICES Collector-Emitter Cut-off Current VCE=1200 V, VGE=0 V, Tvj= 25 ℃ 1.2 mA IGES Gate-Emitter Leakage Current VCE= 0 V, VGE= 15 V, Tvj= 25 ℃ 410 nA td(on) Turn-on Delay Time, Inductive Load tr td(off) tf Rise Time, Inductive Load 100 ns 23 ns 290 ns 180 ns 1.5 mJ IC= 50 A,VCE= 600 V Turn-off Delay Time, Inductive Load V = ±15 V GE Fall Time, Inductive Load RG= 2 Ω Tvj= 25 ℃ Eon Turn-on Energy Loss per Pulse Eoff Energy Loss per Pulse 3.5 mJ Turn-on Delay Time, Inductive Load 110 ns 25 ns 360 ns 160 ns 1.7 mJ 5.8 mJ td(on) tr td(off) tf Rise Time, Inductive Load IC= 50 A,VCE= 600 V Turn-off Delay Time, Inductive Load V = ±15 V GE Fall Time, Inductive Load Eon Turn-on Energy Loss per Pulse Eoff Energy Loss per Pulse RthJC Tvj op RG= 2Ω Tvj= 125 ℃ Thermal resistance, junction to case per IGBT Temperature under switching conditions Leading Energy Electronic Technology Co.,Ltd LEGM75BF120L5H : Preliminary -40 5/12 0.35 K/W 125 ℃ www.leadingenergy-tec.com Mar.2020 Maximum Rated Values (Diode Brake-Chopper) Symbol Parameter Conditions Min. Typ. Max. Unit VRRM Repetitive Peak Reverse Voltage Tvj= 25 ℃ 1200 V IF Continuous DC Forward Current TC= 100 ℃ 50 A IFRM Repetitive Peak Forward Current tP= 1 ms 100 A I2t Value VR=0 V, tP= 10 ms, Tvj= 125 ℃ 1200 A2s I2 t Characteristics (Diode Brake-Chopper) Symbol Parameter Conditions Min. Unit V 3 Forward Voltage 1.6 IF= 50 A, VCE=0 V, Tvj=125 ℃ trr Max. 1.6 IF= 50 A, VCE=0 V, Tvj=25 ℃ VF Typ. V 4 Reverse Recovery time 90 ns 9.5 uC IF=50 A,VR=600 V Qr Recovered Charge -di/dt= 2000 A/us Erec Reverse Recovery Energy 1.2 mJ Reverse Recovery time 110 ns Tvj= 25 ℃ trr IF= 50 A,VR= 600 V Qr Recovered Charge 15. -di/dt= 2000 A/us Tvj=125 ℃ Erec Reverse Recovery Energy RthJC Thermal resistance, junction to case Tvj op uC 9 mJ 1.4 0.6 pro Diode / per Diode K/W 4 Temperature under switching conditions Leading Energy Electronic Technology Co.,Ltd LEGM75BF120L5H : Preliminary -40 6/12 125 ℃ www.leadingenergy-tec.com Mar.2020 NTC-Thermistor (Characteristic Values) Symbol Parameter Conditions Min. Typ. Max. Unit KΩ R25 Rated resistance Tc= 25 ℃ ∆R/R Deviation of R100 Tc= 100 ℃ P25 Power dissipation Tc= 25 ℃ B25/50 B-value R2= R25exp[B25/50(1/T2-1/(298,15K))] 3380 K B25/100 B-value R2= R25exp[B25/100(1/T2-1/(298,15K))] 3450 K 5 -5 5 % 20 mW Module Characteristics Symbol Parameter Visol Isolation voltage Tstg Storage Temperature Ms Module-to-Sink Torque G Weight of Module Leading Energy Electronic Technology Co.,Ltd LEGM75BF120L5H: Preliminary Conditions t=1min,f=50Hz Recommended(M5) Min. Typ. Unit V 2500 -40 125 ℃ 3.0 6.0 N·m 300 7/12 Max. g www.leadingenergy-tec.com Mar.2020 Output characteristic of IGBT,Inverter(typical) IC= f (VCE) VGE = 15 V Switching losses IGBT,Inverter(typical) Eon = f (IC), Eoff = f (IC) VGE= ±15 V, RG= 2 Ω, VCE = 600 V 16 150 VCE, Tvj=25℃ VCE, Tvj=125℃ Eon, Tvj =25℃ Eon, Tvj =125℃ Eoff, Tvj =25℃ Eoff, Tvj =125℃ 14 125 12 100 E (mJ) IC (A) 10 75 8 6 50 4 25 2 0 0.5 0 1.0 1.5 2.0 VCE (V) 2.5 3.0 0 3.5 30 60 90 120 150 IC (A) Switching losses IGBT,Inverter(typical) RBSOA IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG) IC= f (VCE) VGE = ±15 V, IC = 75 A , VCE = 600 V VGE = 15 V, RG = 50 Ω, Tvj =125 ℃ 175 16 Eon, Tvj=25℃ Eon, Tvj=125℃ Eoff, Tvj=25℃ Eoff, Tvj=125℃ 14 150 12 125 IC Modul IC Chip 100 IC (A) E (mJ) 10 8 75 6 50 4 25 2 0 0 0 10 20 30 40 50 RG (Ω） Leading Energy Electronic Technology Co.,Ltd LEGM75BF120L5H: Preliminary 8/12 0 200 400 600 800 1000 1200 1400 VCE (V) www.leadingenergy-tec.com Mar.2020 Forward characteristic of Diode, Inverter (typical) IF = f (VF) Switching losses Diode, Inverter (typical) Erec = f (RG) IF = 75 A, VCE = 600 V 150 8 VF，Tvj=25℃ VF，Tvj=125℃ Erec, Tvj = 25℃ Erec, Tvj = 125℃ 7 125 6 100 E (mJ) IF (A) 5 75 4 3 50 2 25 1 0 0.0 0.5 1.0 1.5 VF (V) 2.0 2.5 0 0 3.0 5 10 15 20 25 RG (Ω) Switching losses Diode, Inverter (typical) Erec = f (IF) RGon = 2 Ω, VCE = 600 V Output characteristic IGBT,Brake-Chopper (typical) IC = f (VCE) VGE = 15 V 11 100 VCE, Tvj=25℃ VCE, Tvj=125℃ Erec, Tvj=25℃ Erec, Tvj=125℃ 10 9 75 IC (A) E (mj) 8 7 50 6 5 25 4 3 0 30 60 90 120 0 0.5 150 IF (A) Leading Energy Electronic Technology Co.,Ltd LEGM75BF120L5H: Preliminary 9/12 1.0 1.5 VCE (V) 2.0 2.5 www.leadingenergy-tec.com Mar.2020 Forward characteristic of Diode, Rectifier(typical) Forward characteristic of Diode,Brake-Chopper (typical) IF = f (VF) IF = f (VF) 100 VF，Tvj=25℃ VF，Tvj=125℃ 140 VF，Tvj=25℃ VF，Tvj=125℃ 120 75 IF (A) IF (A) 100 50 80 60 40 25 20 0 0.0 0.5 1.0 1.5 VF (V) 2.0 0 0.50 2.5 0.75 1.00 1.25 VF (V) 1.50 1.75 2.00 NTC-Thermistor-temperature characteristic (typical) R = f (T) 100k Rtyp R (Ω) 10k 1k 100 0 20 40 60 80 100 120 140 160 TC (℃) Leading Energy Electronic Technology Co.,Ltd LEGM75BF120L5H: Preliminary 10/12 www.leadingenergy-tec.com Mar.2020 Circuit Diagram Package Dimensions (Dimensions in Millimeters) Leading Energy Electronic Technology Co.,Ltd LEGM75BF120L5H : Preliminary 11/12 www.leadingenergy-tec.com Mar.2020 DISCLAIMER ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABITILY, FUNCTION OR DESIGN OR OTHERWISE Leading Energy Electronic Technology Co.,Ltd LEGM75BF120L5H : Preliminary 12/12 www.leadingenergy-tec.com