SE2301

SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE2301 20V P-Channel Enhancement-Mode MOSFET Revision:B General Description Features The MOSFETs from SINO-IC provide the best combination of fast switching, low on-resistance and cost-effectiveness. For a single mosfet z VDS = -20 V z RDS(ON) = 100mΩ @ VGS=-4.50V @Ids=-2.8A z RDS(ON) = 150mΩ @ VGS=-2.50V @Ids=-2.0A General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM z Simple Drive Requirement z Small Package Outline z Surface Mount Device z Pb-Free package is available Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V ID -2.8 A Drain Current (Note 1) Continuous -8 Pulsed Total Power Dissipation @TA=25°C PD @TA=75°C Operating Junction Temperature Range ShangHai Sino-IC Microelectronics Co., Ltd. 0.9 W 0.57 TJ -55 to 150 °C 1. SE2301 Electrical Characteristics Symbol (TJ=25°C unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=-250μA, VGS=0 V IDSS Zero Gate Voltage Drain Current VDS=20 V, VGS=0 V -1 μA IGSS Gate-Body leakage current VDS=0 V, VGS=±10 V ±0.1 μA VGS(th) Gate Threshold Voltage VDS=VGS ID=-250μA -0.45 RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.50V, ID=-2.8 A - 69 100 VGS=-2.5V, ID=-2.0A - 83 150 gFS Forward Transconductance -20 VDS=5V, ID=4.5A V V mΩ 6.5 S 373 pF 138 pF 52 pF 15.2 nC 5.5 nC 2.7 nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=10V, f=1MHz SWITCHING PARAMETERS 2 Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On DelayTime td(off) Turn-Off DelayTime td(r) Turn-On Rise Time td(f) Turn-Off Fall Time VGS=-4.5V, VDS ID=-2.8A 2 ShangHai Sino-IC Microelectronics Co., Ltd. VGS=-4.5V, VDD=-6V, RL=6Ω, RG=6Ω ID=-1A =-6V, 17.3 36.0 ns 3.7 3.2 2. SE2301 Typical Characteristics ShangHai Sino-IC Microelectronics Co., Ltd. 3. SE2301 Typical Characteristics ShangHai Sino-IC Microelectronics Co., Ltd. 4. SE2301 Typical Characteristics ShangHai Sino-IC Microelectronics Co., Ltd. 5. SE2301 Typical Characteristics Packaging Information ShangHai Sino-IC Microelectronics Co., Ltd. 6. SE2301 The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 7.