4409
P-Channel Enhancement Mode Power MOSFET
SOP-8
Description
S
1
8
D
S
2
7
D
excellent RDS(ON), low gate charge and operation with gate
S
3
6
D
voltages as low as 4.5V.
G
4
5
D
The 4409 uses advanced trench technology to provide
Top View
General Features
Equiva len t Cir cu it
● VDS = -30V
RDS(ON) < 15mΩ @ VGS=-4.5V I D = -12.0A
RDS(ON) < 12mΩ @ VGS=-10V
S
G
I D = -15.0A
● High power and current handing capability
D
● Lead free product is acquired
MARKING
● Surface mount package
4409
Application
● Battery Switch
o
● Load switch
● Power management
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
-15
A
-60
A
30
A
135
mJ
o
ID
Drain Current @TA=25 C
IDM
Drain Current (Pulsed)
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy L=0.3mH
PD
IS
Tj, Tstg
RqJA
a
o
3.1
o
Total Power Dissipation @TA=75 C
2.1
Maximum Diode Forward Current
-2.1
A
-55 to +150
°C
40
°C/W
Total Power Dissipation @TA=25 C
Operating Junction and Storage Temperature Range
b
Thermal Resistance Junction to Ambient (PCB mounted)
a: Repetitive Rating: Pulse width limited by the maximum junction temperation.
2
b: 1-in 2oz Cu PCB board
1/6
W
4409
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
· Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
-
-
-1
uA
IGSS
Gate-Body Leakage Current
VGS=±25V, VDS=0V
-
-
±100
nA
· On Characteristicsc
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1.0
-1.5
IDS(on)
On State Drain Current
VDS=-5V, VGS=-10V
60
-
-
VGS=-10V, ID=-15A
-
9.5
12
RDS(on)
Drain-Source On-State Resistance
gFS
Forward Transconductance
· Dynamic Characteristics
-3.0
V
A
mW
VGS=-4.5V, ID=-12 A
-
13
15
VDS=-10V, ID=-5A
-
26
-
-
2900
-
-
410
-
-
280
-
1
2
3
-
48
-
-
12
-
S
d
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
· Switching Characteristics
VDS=-15V, VGS=0V, f=1MHz
VDS=0V, VGS=0V, f=1MHz
pF
W
d
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
-
14
-
td(on)
Turn-on Delay Time
-
15
-
tr
Turn-on Rise Time
VDD =-15V, ID=-10A,
-
11
-
td(off)
Turn-off Delay Time
VGS=-10V, RG=3W
-
44
-
-
21
-
-
33
40
nS
-
23
-
nC
-
-
-1
V
-
-
-2.1
A
tf
Turn-off Fall Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDS=-15V, ID=-10A, VGS=-10V
IDS=-12A, dI/ dt=100A/ uS
nC
nS
· Drain-Source Diode Characteristics
VSD
Drain-Source Diode Forward Voltage
IS
Drain-Source Diode Forward Current
VGS=0V, IS=-1A
Note: Pulse Test: Pulse Width £300us, Duty Cycle£2%
2/6
4409
Typical Electrical and Thermal Characteristics
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2 Switching Waveforms
PD Power(W)
ID- Drain Current (A)
Figure 1 Switching Test Circuit
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 4 Safe Operation Area
ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 3 Power Dissipation
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 6 Drain-Source On-Resistance
Figure 5 Output Characteristics
3/6
ID- Drain Current (A)
Normalized On-Resistance
4409
TJ-Junction Temperature(℃)
Vgs Gate-Source Voltage (V)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Figure 7 Transfer Characteristics
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
4/6
r(t),Normalized Effective
Transient Thermal Impedance
4409
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
5/6
4409
SOP-8 Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
1.350
1.750
0.053
0.069
A1
0.100
0.250
0.004
0.010
A2
1.350
1.550
0.053
0.061
b
0.330
0.510
0.013
0.020
c
0.170
0.250
0.006
0.010
D
4.700
5.100
0.185
0.200
E
3.800
4.000
0.150
0.157
E1
5.800
6.200
0.228
0.244
e
1.270(BSC)
0.050(BSC)
L
0.400
1.270
0.016
0.050
θ
0°
8°
0°
8°
6/6
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