SS8050W TRANSISTOR
(NPN)
SOT–323
FEATURES
Complimentary to SS8550W
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: Y1
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1.5
A
PC
Collector Power Dissipation
0.2
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 0.1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
0.1
μA
Collector cut-off current
ICEO
VCB=20V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC= 100mA
120
hFE(2)
VCE=1V, IC= 800mA
40
400
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC=800mA, IB= 80mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB= 80mA
1.2
V
fT
Transition frequency
VCE=10V, IC= 50mA
f=30MHz
100
MHz
CLASSIFICATION OF hFE(1)
Page 1 of 3
RANK
L
H
J
RANGE
120–200
200–350
300–400
5/30/2011
Typical Characteristics
Page 2 of 3
SS8050W
5/30/2011
SOT-323 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Page 3 of 3
Dimensions In Millimeters
Max.
Min.
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
2.150
2.450
0.650 TYP.
1.200
1.400
0.525 REF.
0.260
0.460
0°
8°
Dimensions In Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
0.085
0.096
0.026 TYP.
0.047
0.055
0.021 REF.
0.010
0.018
0°
8°
5/30/2011
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