2SC3356

2SC3356 TRANSISTOR (NPN) MARKING: Equivalent Circuit: SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES: ※ High transition frequency ※ Small rbb’·Cc and high gain. ※ Small NF. ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 11 V Emitter-Base Voltage VEBO 3 V Collector Current IC 50 mA Collector Power Dissipation PC 200 mW RΘJA 200 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55～+150 ℃ Thermal Resistance From Junction To Ambient www.yongyutai.com PAGE 1 2SC3356 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min IC= 100μA, IE=0 20 V Collector-base breakdown voltage V(BR)CBO Typ Max Unit Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 11 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 3 V Collector cut-off current ICBO VCB= 20 V , IE=0 0.5 μA Emitter cut-off current IEBO VEB= 3V , IC=0 0.5 μA DC current gain hFE VCE= 10V, IC= 5mA Collector-emitter saturation voltage VCE(sat) IC= 10 mA, IB= 5mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 10 mA, IB= 5mA 1.2 V fT VCE=10V, IC= 10mA f=500MHz, Cob VCB = 10 V, IE = 0 mA, f = 1 MHz rbb’.Cc VCB = 10 V, IC = 10 mA, f=31.8 MHz, 4 NF VCE = 6 V, IC = 2 mA, f = 500MHz, Rg=50Ω 3.5 Transition frequency Collector output capacitance Collector-base time constant Noise figure 82 1.4 250 3.2 GHz 1.5 PF 12 ps dB CLASSIFICATION OF hFE TYPE 2SC3356 2SC3356 2SC3356 Range 82-180 100-200 120-240 MARKING R23 R24 R25 www.yongyutai.com PAGE 2 2SC3356 www.yongyutai.com PAGE 3