2SC1815
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
FEATURES
MARKING:HF
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
(符号)
(参数名称)
(额定值)
(单位)
VCBO
Collector-Base Voltage (集电极-基极电压)
60
V
VCEO
Collector-Emitter Voltage (集电极-发射极电压)
50
V
VEBO
Emitter-Base Voltage (发射极-基极电压)
5
V
IC
Collector Current -Continuous (集电极电流)
0.15
A
PC
Collector Power Dissipation (耗散功率)
0.2
W
Tj
Junction Temperature (结温)
150
℃
Tstg
Storage Temperature (储存温度)
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)
Parameter
(参数名称)
Symbol
(符号)
Test conditions
(测试条件)
MIN
TYP
MAX
(最小值) (典型值) (最大值)
UNIT
(单位)
Collector-base breakdown voltage
集电极-基极击穿电压
V(BR)CBO
IC= 100μA, IE=0
60
V
Collector-emitter breakdown voltage
集电极-发射极击穿电压
V(BR)CEO
IC= 1mA, IB=0
50
V
Emitter-base breakdown voltage
发射极-基极击穿电压
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
集电极-基极截止电流
ICBO
VCB=50 V , IE=0
1
μA
Collector cut-off current
集电极-发射极截止电流
ICEO
VCE=35V ,
10
μA
Emitter cut-off current
发射极-基极截止电流
IEBO
VEB=5V , IC=0
1
μA
DC current gain
直流电流增益
hFE
VCE=6V, IC= 2mA
Collector-emitter saturation voltage
集电极-发射极饱和压降
VCE(sat)
IC=100mA, IB= 5mA
0.3
V
Base-emitter saturation voltage
发射极-基极饱和压降
VBE(sat)
IC=100mA, IB= 5mA
1
V
CLASSIFICATION OF
Range
www.yongyutai.com
80-200
IB=0
80
600
hFE
200-400
400-600
PAGE 1
2SC1815
Typical Characteristics
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PAGE 2
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