WPM3021-8/TR

WPM3021 WPM3021 Single P-Channel, -30V, -13A, Power MOSFET VDS (V) Http://www.sh-willsemi.com Typical RDS(on) (mΩ) -30 11@ VGS=-10V 15 @ VGS=-5V (4) (3) Descriptions (1) The WPM3021 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3021 is Pb-free. SOP-8L D 8 Features ⚫ Trench Technology ⚫ Supper high density cell design ⚫ Excellent ON resistance ⚫ Extremely Low Threshold Voltage ⚫ Small package SOP-8L DC/DC converters ⚫ Power supply converters circuit ⚫ Load/Power Switching for portable device D 7 D 6 D 5 1 2 3 4 S S S G Pin configuration (Top view) Applications ⚫ (2) PE = Device Code Y = Year W = Week(A~z) Marking Will Semiconductor Ltd. Order information 1 Device Package Shipping WPM3021-8/TR SOP-8L 4000/Tape&Reel Jan, 2019- Rev.1.3 WPM3021 Absolute Maximum ratings Parameter Symbol Maximum Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current TA=25°C Pulsed Drain Current c -10 IDM Maximum Power Dissipation b TA=25°C Operating Junction Temperature Storage Temperature Range A -72 3.8 PD TA=70°C V -13 ID TA=70°C Unit W 2.4 TJ -55 to 150 °C TSTG -55 to 150 °C Thermal resistance ratings Single Operation Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Lead Thermal Resistance Symbol t ≤ 10 s Steady State Steady State Typical Maximum 25 33 50 63 10 13 RθJA RθJL Unit °C/W Note: a. The value of RθJA is measured with the device mounted on 1-inch2 (6.45cm2) with 2oz.(0.071mm thick) Copper pad on a 1.5*1.5 inch2, 0.06-inch thick FR4 PCB, in a still air environment with TA =25°C. The value in any given application is determined by the user's specific board design b. The power dissipation PD is based on Junction-to-Ambient thermal resistance RθJA t ≤ 10s value and the TJ(MAX)=150°C. c. Repetitive rating, ~10us pulse width, duty cycle ~1%, keep initial TJ =25°C, the maximum allowed junction temperature of 150°C. d. The static characteristics are obtained using ~380us pulses, duty cycle ~1%. Will Semiconductor Ltd. 2 Jan, 2019- Rev.1.3 WPM3021 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS = 0V Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±25V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250uA Drain-to-source On-resistance RDS(on) Forward Transconductance gFS -30 V -1 uA ±100 nA -1.8 -3.0 V VGS = -10V, ID = -13A 11 15 VGS =-5V, ID = -7A 15 20 VDS = -5 V, ID = -8A 7 16 ON CHARACTERISTICS -1.0 mΩ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 2106 Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = -10 V, VDS = -15 V, Gate-to-Source Charge QGS ID =-13 A Gate-to-Drain Charge QGD 6.5 Turn-On Delay Time td(ON) 18 Rise Time tr VGS = -10 V, VDS =-15 V, 24 Turn-Off Delay Time td(OFF) ID=-5A, RG=6Ω 114 Fall Time tf VGS = 0 V, f = 1.0MHz, VDS = 353 -15 V pF 274 38 4 nC 7.7 SWITCHING CHARACTERISTICS ns 47 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = -1A 3 -0.5 -0.8 -1.2 V Jan, 2019- Rev.1.3 WPM3021 9 12 15 Capacitance (pF) Typical Characteristics (Ta=25oC, unless otherwise noted) 20 20 VGS=-10V VDS=-5V 18 -IDS-Drain Source Current(A) 6 16 16 VGS=-4.5V 14 12 12 10 VGS=-3.5V 8 4 0 0 1 2 o 150 C 8 6 o 25 C o -50 C 4 2 0 1.0 3 1.5 -VDS-Drain to Source Voltage(V) 2.0 2.5 3.0 3.5 -VGS-Gate to Source Voltage(V) Output characteristics Transfer characteristics 0.05 0.10 RDS(ON)-On-Resistance() 3 -VDS-Drain to Source Voltage (V) 0.04 VGS=-3.5V 0.03 VGS=-4.5V 0.02 VGS=-10V 0.01 2 4 6 8 ID=-13A 0.08 0.06 0.04 0.02 0.00 10 3 -IDS-Drain to Source Current(A) On-Resistance vs. Drain current VGS=-10V ID=-13A 1.2 1.0 0.8 0.6 -50 0 50 100 6 7 8 9 10 1.2 ID=-250uA 1.0 0.8 0.6 -50 150 0 50 100 150 Temperature ( C) o o Temperature ( C) On-Resistance vs. Junction temperature Will Semiconductor Ltd. 5 On-Resistance vs. Gate-to-source voltage 1.6 1.4 4 -VGS-Gate to Source Voltage (V) Gate Threshold Voltage Normalized 0 -IDS-Drain to Source Current(A) 0 RDS(ON)-On Resistance() F = 1MHZ Ciss Coss Crss 500 RDS(ON)-On-Resistance Normalized 3500 3000 2500 2000 1500 1000 Threshold voltage vs. Temperature 4 Jan, 2019- Rev.1.3 WPM3021 3000 10 -ISD-Source to Drain Current (A) F = 1MHZ Capacitance (pF) 2500 2000 Ciss 1500 1000 Coss Crss 500 8 6 o 3 6 9 12 T=25 C 2 0 0 o T=150 C 4 0.0 15 0.2 0.4 0.6 0.8 1.0 1.2 -VSD-Source to Drain Voltage (V) -VDS-Drain to Source Voltage (V) Capacitance Body diode forward voltage 100 10000 o TJ(MAX)=150 C Limit by Rdson TA=25 C -ID-Drain Current (A) 8000 Power (W) 100us o 6000 4000 10 1ms DC 10ms 1 10s 100ms 1s o 2000 0.1 TJ(MAX)=150 C TA=25oC Single Pulse 0 1E-5 1E-4 1E-3 0.01 0.1 1 10 0.01 100 0.1 Pulse width (S) 1 10 100 -VDS-Drain to Source Voltage(V) Single pulse power Safe operating power -VGS-Gate to Source Voltage (V) 10 VDS=-15V ID=-5A 8 6 4 2 0 0 10 20 30 40 Qg(nC) Gate Charge Characteristics Will Semiconductor Ltd. 5 Jan, 2019- Rev.1.3 WPM3021 Transient Thermal Response (Junction-to-Ambient) Normalized Effective Transient Thermal Impedance 10 In Descending Order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pluse 1 0.1 0.01 1E-3 1E-6 1.Duty Cycle, D=Ton/T 2.Per Unit Base=RthJA =63oC/W single pulse 1E-5 1E-4 1E-3 0.01 0.1 1 3.TJM-TA =PDMZthJA (t) 4.Surface Mounted 10 100 1000 Square Wave Pulse Duration (s) Will Semiconductor Ltd. 6 Jan, 2019- Rev.1.3 WPM3021 Package outline dimensions SOP-8L D E E1 L c θ e SIDE VIEW A1 TOP VIEW A A2 b SIDE VIEW Dimensions In Millimeters (mm) Symbol Min. Typ. Max. A 1.35 1.55 1.75 A1 0.05 0.15 0.25 A2 1.25 1.40 1.65 b 0.33 - 0.51 c 0.15 - 0.26 D 4.70 4.90 5.10 E 3.70 3.90 4.10 E1 5.80 6.00 6.20 e 1.27BSC L 0.40 - 1.27 θ 0° - 8° Will Semiconductor Ltd. 7 Jan, 2019- Rev.1.3 WPM3021 Tape and reel information RD Reel Dimensions Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm P1 Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Pin1 Quadrant Q1 Q2 Q3 Will Semiconductor Ltd. 8 Q4 Jan, 2019- Rev.1.3