AZ1045-04F

AZ1045-04F Ultra Low Capacitance ESD Protection Array DESCRIPTION FEATURES ultra-low capacitance Transient Voltage Suppressor (TVS) designed to protection for high-speed data interfaces. With typical capacitance of 0.2pF (I/O to I/O) only, to protect AZ1045-04F is a designed parasitic-sensitive systems against over-voltage and over-current transient events. It complies with IEC 61000-4-2 (ESD), Level 4(±15KV air, ±8KV contact discharge), IEC61000-4-4 (electrical fast transient-EFT) (40A, 5/50ns),very fast charged device model (CDM) ESD and cable discharge event(CDE), etc.  Transient protection for high-speed data lines IEC 61000-4-2(ESD) ±25KV(Air) ±20KV(Contact) IEC 61000-4-4(EFT)40A(5/50ns) Cable Discharge Event(CDE)  Package optimized for high-speed lines  Ultra-small package(2.5mm*1.0mm*0.5mm)  Protects four data lines  Low capacitance: 0.2pF (I/O to I/O)  Low leakage current  Low clamping voltage  Each I/O pin can withstand over 1000 ESD strikes for ±8KV contact discharge The AZ1045-04F is a The AZ1045-04F is a device can protect four MACHANICAL DATA high-speed data lines. The combined features of ultra-low capacitance, ultra-small size and high ESD robustness make AZ1045-04F is a for high-speed data ports and high-frequency lines (e.g., HDMI &DVI) applications. The low clamping voltage of AZ1045-04F is a guarantees a minimum stress on the protected IC.  DFN2510 package  Flammability Rating: UL 94V-0  Terminal: Matte tin plated.  Packaging: Tape and Reel  High temperature soldering guaranted:260℃/10s  Reel size: 7 inch ORDERING INFORMATION APPLICATIONS  Package: DFN2510  Serial ATA  PCI Express  Desktops, Servers and Notebooks  MDDI Ports  USB 2.0/3.0 Power and Data Line Protection  Display Ports  High Definition Multi-Media Interface (HDMI)  Digital Visual Interface (DVI)  Material: Halogen free  Packing: Tape & Reel  Quantity per reel: 3,000pcs PIN CONFIGURATION PACKAGE OUTLINE 1/4 AZ1045-04F Ultra Low Capacitance ESD Protection Array ABSOLUTE MAXIMUM RATING Symbol Parameter Value Units PPP Peak Pulse Power (8/20μs) 60 W VESD ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) ±25 ±20 kV TOPT Operating Temperature -55/+125 C TSTG Storage Temperature -55/+150 C ELECTRICAL CHARACTERISTICS (Tamb=25C) Symbol Parameter Test Condition VRWM Reverse Working Voltage Any I/O pin to GND IT = 1mA Any I/O pin to GND VRWM = 5V IR Reverse Leakage Current Any I/O pin to GND IPP = 1A, tp = 8/20μs VC Clamping Voltage Any I/O pin to GND IPP = 4A, tp = 8/20μs VC Clamping Voltage Any I/O pin to GND VR = 0V, f = 1MHz CESD Parasitic Capacitance Between I/O and GND VR = 0V, f = 1MHz CESD Parasitic Capacitance Between I/O and I/O Note: I/O pins are pin 1,2,4,5, GND pins are pin 3,8. VBR Reverse Breakdown Voltage 2/4 Min Typ Max Units 5.0 V 9.0 V 1.0 μA 10 V 15 V 0.4 0.5 pF 0.2 0.3 pF 6.0 AZ1045-04F Ultra Low Capacitance ESD Protection Array ELECTRICAL CHARACTERISTICS CURVE 3/4 AZ1045-04F Ultra Low Capacitance ESD Protection Array DFN2510 PACKAGE OUTLINE DIMENSIONS Symbol Dimensions (mm) Min. Nom. Max. D 2.45 2.50 2.55 E 0.95 1.00 1.05 b1 0.35 0.40 0.45 b2 0.20REF b 0.15 0.20 0.25 L 0.33 0.38 0.43 Nd 2.00BSC e 0.50BSC R 0.10 0.125 0.15 A 0.45 0.50 0.55 c A1 0.15REF 0.00 - 4/4 0.05