MMST3906

MMST3906 SOT-323 Plastic-Encapsulate Transistors MMST3906 TRANSISTOR (PNP) SOT–323 FEATURES  Complementary to MMST3904 MARKING:K5N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO* IC=-10µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO* IC=-1mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO* IE=-10µA, IC=0 -5 V Base cut-off current IBL* VCE=-30V, VEB(Off)=-3V -50 nA Collector cut-off current ICEX* VCE=-30V, VEB(Off)=-3V -50 nA DC current gain hFE* Collector-emitter saturation voltage VCE(sat)* Base-emitter saturation voltage VBE(sat)* Transition frequency fT VCE=-1V, IC=-100µA 60 VCE=-1V, IC=-1mA 80 VCE=-1V, IC=-10mA 100 300 IC=-10mA, IB=-1mA -0.2 V IC=-50mA, IB=-5mA -0.3 V -0.85 V -0.95 V IC=-10mA, IB=-1mA -0.65 IC=-50mA, IB=-5mA VCE=-20V,IC=-10mA , f=100MHz 250 MHz Collector output capacitance Cob VCB=-5V, IE=0, f=1MHz 4.5 pF Collector output capacitance Cib VEB=-0.5V, IE=0, f=1MHz 10 pF Delay time td VCC=-3V, VBE(off)=-0.5V, IC=-10mA, 35 ns Rise time tr IB1=-1mA 35 ns Storage time ts 225 ns Fall time tf 75 ns VCC=3V, IC=-10mA, IB1= IB2=-1mA *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. www.yongyutai.com PAGE 1 Typical Characteristics Static Characteristic -80 hFE 200 DC CURRENT GAIN COLLECTOR CURRENT IC Ta=100℃ -350uA -300uA -250uA -200uA -40 —— COMMON EMITTER VCE=-1V COMMON EMITTER Ta=25℃ -400uA -60 hFE 300 -500uA -450uA IC (mA) -100 -150uA Ta=25℃ 100 -100uA -20 IB=-50uA 0 -0.1 -0 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat -500 —— VCE -20 -1 -0.3 -10 -3 COLLECTOR CURRENT (V) IC VBEsat -1.2 -100 -30 IC -200 (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -300 Ta=100℃ -100 Ta=25℃ -30 Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 -10 β=10 -0.0 -1 -3 -30 -10 COLLECTOR CURRENT IC -100 IC -100 -200 -1 -10 -3 (mA) -100 -30 COLLECTOR CURRENT —— VBE Cob/ Cib 9 —— IC VCB/ VEB f=1MHz IE=0/IC=0 -30 Ta=25℃ Cob (pF) Ta=100℃ Cib C -10 CAPACITANCE IC (mA) COMMON EMITTER VCE=-1V COLLECTOR CURRENT -200 (mA) -3 Ta=25℃ -1 3 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 1 -0.1 -1.2 fT 600 —— IC -1 -3 REVERSE VOLTAGE V -0.3 BASE-EMMITER VOLTAGE VBE (V) PC 250 —— -10 -20 (V) Ta VCE=-20V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 400 200 200 150 100 50 0 -1 -3 -10 COLLECTOR CURRENT www.yongyutai.com www.cj-elec.com -30 IC (mA) -50 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) PAGE 2 A,Jun,2014 SOT-323 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-323 Suggested Pad Layout www.cj-elec.com www.yongyutai.com A,Jun,2014 PAGE 3