WNM2021-3/MS

www.msksemi.com WNM2021-3/MS Semiconductor Compiance Features D 3 ● Trench Technology ● Supper high density cell design ● Excellent ON resistance 2 S 1 G ● Extremely Low Threshold Voltage ● Small package SOT-323 Pin configuration (Top view) Applications SOT-323 ● DC-DC converter circuit ● Small Signal Switch ● Load Switch ● Level Shift N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) 20 Absolute Maximum ratings Parameter Symbol Rds(on) (Ω) ID (A) 0.220@ VGS=4.5V 0.55 0.260@ VGS=2.5V 0.45 0.320@ VGS=1.8V 0.35 10 S Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±6 TA=25°C Continuous Drain Current a Maximum Power Dissipation TA=70°C a Pulsed Drain Current TA=70°C TA=25°C Continuous Drain Current b Maximum Power Dissipation TA=25°C TA=70°C b TA=25°C TA=70°C ID PD ID PD Unit V 0.89 0.82 0.71 0.65 0.37 0.31 0.23 0.20 0.78 0.70 0.62 0.56 0.29 0.23 0.18 0.14 A W A W IDM 1.4 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C c Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistancea Junction-to-Ambient Thermal Resistanceb Junction-to-Case Thermal Resistance Symbol t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State Typical Maximum 275 335 325 395 375 430 445 535 260 300 RθJA RθJA RθJC a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. Unit °C/W www.msksemi.com WNM2021-3/MS Semiconductor Compiance Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA 20 V Zero Gate Voltage Drain Current IDSS VDS =16 V, VGS = 0V 100 nA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS =±5V 5 uA VGS(TH) VGS = VDS, ID = 250uA V ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS 0.58 0.85 VGS = 4.5V, ID = 0.55A 0.45 220 260 VGS = 2.5V, ID = 0.45A 260 310 VGS = 1.8V, ID = 0.35A 320 380 VDS = 5 V, ID = 0.55A 2.0 mΩ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 50 VGS = 0 V, f = 1.0 MHz, VDS = pF 13 10 V 8 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V, 1.15 0.06 Gate-to-Source Charge QGS ID = 0.55A 0.15 Gate-to-Drain Charge QGD nC 0.23 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 22 Rise Time tr VGS = 4.5 V, VDS = 10V, 80 Turn-Off Delay Time td(OFF) RL=3 Ω, RG=6 Ω 700 Fall Time tf ns 380 BODY DIODE CHARACTERISTICS Forward Voltage VSD VGS = 0 V, IS = 0.35A 0.5 0.7 1.1 V www.msksemi.com WNM2021-3/MS Semiconductor Compiance PACKAGE MECHANICAL DATA Symbol A A1 A2 b c D E E1 e e1 L L1 0 Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° REEL SPECIFICATION P/N WNM2021-3/MS PKG QTY SOT-323 3000 www.msksemi.com WNM2021-3/MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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