2SB647

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB647 TRANSISTOR (PNP) SOT-89-3L FEATURE Power dissipation PCM: 1. BASE 0.9 W (Tamb=25℃) 2. COLLECTOR 1 Collector current ICM: -1 A Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range 2 3 3. EMITTER TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage unless otherwise specified) Test conditions V(BR)CBO Ic= -10μA , IE=0 V(BR)CEO IC=-1mA , V(BR)EBO IE= -10μA, IC=0 ICBO VCB= -100 V, IE=0 hFE(1)* VCE=-5 V, IC= -150mA hFE(2) VCE=-5 V, IC= -500mA VCEsat IC=-500mA, IB=-50mA fT VCE=-5V, IC= -150mA Cob VCE=-10V, IE=0 f=1 MHz 2SB647 Emitter-base breakdown voltage Collector cut-off current 2SB647 IB=0 MIN MAX -120 V -80 V -5 V -10 60 UNIT μA 320 DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance 30 -1 140 MHz 20 CLASSIFICATION OF hFE Rank Range 2SB647 V B C D 60-120 100-150 150-320 pF Typical Characteristics 2SB647