BC556B

BC556/557/558(PNP) TO-92 Bipolar Transistors 1. COLLECTOR TO-92 2. BASE 3. EMITTER Features
High Voltage Complement to BC546/BC547/BC548
MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Collector-Base Voltage VCBO VCEO VEBO Value BC556 BC557 BC558 Collector-Emitter Voltage -80 -50 -30 -65 -45 -30 -5 Emitter-Base Voltage Units V V V IC Collector Current -Continuous -100 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage BC556 BC557 BC558 BC556 BC557 BC558 Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC557A BC556B/BC557B/BC558B BC557C Test conditions VCBO IC= -100μA, IE=0 VCEO IC= -2mA , IB=0 VEBO IE= -100μA, IC=0 ICBO ICEO IEBO hFE MIN MAX -80 -50 -30 -65 -45 -30 VEB= -5 V, IC=0 120 120 120 120 180 420 UNIT V V -5 VCB=- 70 V, IE=0 VCB= -45 V, IE=0 VCB= -25V, IE=0 VCE= -60 V, IB=0 VCE= -40 V, IB=0 VCE= -25 V, IB=0 VCE=-5V, IC= -2mA TYP V -0.1 μA -0.1 μA -0.1 μA 800 800 800 220 460 800 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -5mA -0.65 V Base-emitter saturation voltage VBE(sat) IC= -100mA, IB=-5mA -1 V Transition frequency Revision:20170701-P1 fT ht t p : // VCE= -5V, IC= -10mA f = 100MHz www.lgesem i .c o m 150 MHz mail:lge@lgesemi.com BC556/557/558(PNP) TO-92 Bipolar Transistors Typical Characteristics Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com BC556/557/558(PNP) TO-92 Bipolar Transistors Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com BC556/557/558(PNP) TO-92 Bipolar Transistors Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com