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SCT2330TVBR

SCT2330TVBR

  • 厂商:

    SCT(芯洲科技)

  • 封装:

    TSOT23-6L

  • 描述:

    SCT2330TVBR

  • 数据手册
  • 价格&库存
SCT2330TVBR 数据手册
SILICON CONTENT TECHNOLOGY SCT2330 3.8V-32V Vin, 3A Synchronous Step-down DCDC Converter with EMI Reduction FEATURES                DESCRIPTION EMI Reduction with Switching Node Ringing-free 400kHz Switching Frequency with 6% Frequency Spread Spectrum (FSS) Pulse Skipping Mode PSM with 20uA Quiescent Current in Light Load Condition 3.8V-32V Wide Input Voltage Range Up to 3A Continuous Output Load Current 0.8V ±1% Feedback Reference Voltage Fully Integrated 80mΩ Rdson High Side MOSFET and 42mΩ Rdson Low Side MOSFET 1uA Shut-down Current 80ns Minimum On-time Precision Enable Threshold for Programmable UVLO Threshold and Hysteresis Low Drop out (LDO) Mode Operation 4ms Built-in Soft Start Time Output Over Voltage Protection Thermal Shutdown Protection at 160°C Available in TSOT23-6L Package APPLICATIONS      The SCT2330 is 3A synchronous buck converters with up to 32V wide input voltage range, which fully integrates an 80mΩ high-side MOSFET and a 42mΩ low-side MOSFET to provide high efficiency step-down DCDC conversion. The SCT2330 adopts peak current mode control with the integrated compensation network, which makes SCT2330 easily to be used by minimizing the off-chip component count. The SCT2330 supports the Pulse Skipping Modulation (PSM) with typical 20uA Ultra-Low Quiescent. The SCT2330 is an Electromagnetic Interference (EMI) friendly buck converter with implementing optimized design for EMI reduction. The SCT2330 features Frequency Spread Spectrum FSS with ±6% jittering span of the 400kHz switching frequency and modulation rate 1/512 of switching frequency to reduce the conducted EMI. The converter has proprietary designed gate driver scheme to resist switching node ringing without sacrificing MOSFET turn-on and turn-off time, which further erases high frequency radiation EMI noise caused by the MOSFETs hard switching. The SCT2330 offers output over-voltage protection, cycle-by-cycle peak current limit, and thermal shutdown protection. The device is available in a lowprofile TSOT23-6 package. White Goods, Home Appliance Surveillance Audio, WiFi Speaker Printer, Charging Station DTV, STB, Monitor/LCD Display TYPICAL APPLICATION 100 R1 90 80 FB R2 ON OFF VIN BST C2 Efficiency (%) R3 L1 VOUT EN SW VIN GND C3 C1 70 60 50 40 12VIN,3.3VOUT 30 12VIN, 5VOUT 20 24VIN, 3.3VOUT 10 24VIN, 5VOUT 0 1 10 100 1,000 10,000 Output Current (mA) For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 1 SCT2330 REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Revision 1.0: Release to Market DEVICE ORDER INFORMATION PART NUMBER PACKAGE MARKING PACKAGE DISCRIPTION SCT2330TVB 2330 TSOT23-6L 1) For Tape & Reel, Add Suffix R (e.g. SCT2330TVBR) ABSOLUTE MAXIMUM RATINGS Over operating free-air temperature unless otherwise (1) (2) PIN CONFIGURATION noted(1) DESCRIPTION MIN MAX UNIT BST -0.3 40 V VIN, SW, EN -0.3 34 VS, FB -0.3 Operating junction temperature(2) Storage temperature TSTG FB 1 6 BST V EN 2 5 SW 5.5 V VIN 3 4 GND -40 125 C -65 150 C Top View: TSOT23-6L, Plastic Stresses beyond those listed under Absolute Maximum Rating may cause device permanent damage. The device is not guaranteed to function outside of its Recommended Operation Conditions. The IC includes over temperature protection to protect the device during overload conditions. Junction temperature will exceed 150°C when over temperature protection is active. Continuous operation above the specified maximum operating junction temperature will reduce lifetime. PIN FUNCTIONS NAME NO. FB 1 Buck converter output feedback sensing voltage. Connect a resistor divider from VOUT to FB to set up output voltage. The device regulates FB to the internal reference of 0.8V typical. EN 2 Enable logic input. Floating the pin enables the device. This pin supports high voltage input up to VIN supply to be connected VIN directly to enable the device automatically. The device has precision enable thresholds 1.18V rising / 1.1V falling for programmable UVLO threshold and hysteresis. VIN 3 Power supply input. Must be locally bypassed. GND 4 Power ground. Must be soldered directly to ground plane. SW 5 Switching node of the buck converter. 2 PIN FUNCTION For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 SCT2330 BST 6 Power supply for the high-side power MOSFET gate driver. Must connect a 0.1uF or greater ceramic capacitor between BST pin and SW node. RECOMMENDED OPERATING CONDITIONS Over operating free-air temperature range unless otherwise noted PARAMETER DEFINITION VIN TJ Input voltage range Operating junction temperature MIN MAX UNIT 3.8 -40 32 125 V °C MIN MAX UNIT -2 +2 kV -0.5 +0.5 kV ESD RATINGS PARAMETER DEFINITION Human Body Model(HBM), per ANSI-JEDEC-JS-0012014 specification, all pins(1) Charged Device Model(CDM), per ANSI-JEDEC-JS-0022014specification, all pins(1) VESD (1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process. THERMAL INFORMATION PARAMETER THERMAL METRIC TSOT23-6L RθJA Junction to ambient thermal resistance(1) 89 RθJC Junction to case thermal resistance(1) 39 UNIT °C/W (1) SCT provides RθJA and RθJC numbers only as reference to estimate junction temperatures of the devices. RθJA and RθJC are not a characteristic of package itself, but of many other system level characteristics such as the design and layout of the printed circuit board (PCB) on which the SCT2330 is mounted. The PCB board is a heat sink that is soldered to the leads and thermal pad of the SCT2330. Changing the design or configuration of the PCB board changes the efficiency of the heat sink and therefore the actual RθJA and RθJC. ELECTRICAL CHARACTERISTICS VIN=12V, TJ=-40°C~125°C, typical value is tested under 25°C. SYMBOL PARAMETER TEST CONDITION Power Supply and Output VIN Operating input voltage ISD Input UVLO Hysteresis Shutdown current IQ Quiescent current VIN_UVLO MIN TYP MAX 32 V 3.5 420 1 3.7 V mV uA 3.8 VIN rising EN=0, No load, VIN=12V EN=floating, No load, No switching. VIN=12V. BSTSW=5V 20 Enable, Soft Start and Working Modes VEN_H Enable high threshold 1.18 VEN_L Enable low threshold IEN Enable pin input current EN=1V IEN_HYS Enable pin hysteresis current EN=1.5V Power MOSFETs RDSON_H High side FET on-resistance For more information www.silicontent.com 3 1.03 1.1 1 1.5 uA 1.25 V V 2 uA 4 uA 80 mΩ © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 UNIT 3 SCT2330 SYMBOL PARAMETER TEST CONDITION RDSON_L Low side FET on-resistance MIN TYP MAX 42 UNIT mΩ Feedback and Error Amplifier VFB Feedback Voltage Current Limit ILIM_HSD HSD peak current limit ILIM_LSD LSD valley current limit Switching Frequency FSW Switching frequency VIN=12V, VOUT=5V 0.792 0.8 0.808 V 4 4.5 5 A 3.2 4 4.8 A 360 400 440 kHz tON_MIN Minimum on-time 80 ns FJITTER FSS jittering span ±6 % 4 ms Soft Start Time tSS Internal soft-start time Protection VOVP THIC_W THIC_R TSD 4 Output OVP threshold Hysteresis OCP hiccup wait time OCP hiccup restart time Thermal shutdown threshold Hysteresis For more information www.silicontent.com VOUT rising TJ rising 110 5 512 8192 160 25 © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 % % Cycles Cycles °C SCT2330 TYPICAL CHARACTERISTICS 100 100 90 90 80 80 70 Efficiency (%) Efficiency (%) 70 60 50 40 60 50 40 30 30 20 10 24VIN, 3.3VOUT 20 12VIN,3.3VOUT 24VIN, 5VOUT 10 12VIN, 5VOUT 0 0 1 10 100 1,000 1 10,000 10 100 Output Current (mA) 10,000 Figure 2. Efficiency vs Load Current, Vin=12V Figure 1. Efficiency vs Load Current, Vin=24V 2.0 50 40 Iq (uA) 1.5 I_SD (uA)) 1,000 Output Current (mA) 1.0 0.5 30 20 10 0.0 0 -50 0 50 100 150 -50 0 50 Temperature (°C) 100 150 Temperature (°C) Figure 4. Quiescent Current vs Temperature Figure 3. Shut-down Current vs Temperature 0.900 5.0 0.850 VREF (V) 4.0 0.800 3.0 0.750 ILIM HSD ILIM LSD 0.700 2.0 -50 0 50 100 150 -50 Temperature (°C) 0 50 100 Temperature (°C) Figure 5. Reference Voltage vs Temperature For more information www.silicontent.com Figure 6.Peak Current Limit vs Temperature © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 5 SCT2330 0 3.60 -1 -2 Ien (uA) VIN (V) 3.40 3.20 -3 Ien_1V Ien_1.5V -4 3.00 -5 UVLO RISING UVLO FALLING -6 2.80 -50 0 50 100 -50 150 0 50 100 150 Temperature (°C) Temperature (°C) Figure 8. EN Pull-up Current vs Temperature Figure 7. VIN UVLO vs Temperature 3.35 5.05 Output Voltage (V) Output Voltage (V) 5.00 3.30 3.25 4.95 4.90 4.85 3.20 0 500 1,000 1,500 2,000 2,500 3,000 Figure 9. Load Regulation, Vout=3.3V 6 For more information www.silicontent.com 5 10 15 20 25 30 Input Voltage (V) Output Current (mA) Figure 10. Line Regulation, Iout=3A © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 35 SCT2330 FUNCTIONAL BLOCK DIAGRAM VIN 3 4uA 1.5uA UVLO 20K EN 2 + VIN UVLO and LDO EN VCC 1.21V VCC HS MOSFET Current Limit BOOT UVLO Ramp SS/4ms + + GM 0.8V FB 1 COMP BOOT Strap PWM + 6 BST 5 SW 4 GND Q1 18k PWM and Dead Time Control Logic 7.6nF + OVP 0.88V Q2 Oscillator with PLL CLK Thermal Protection LS MOSFET Current Limit Figure 11. Functional Block Diagram For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 7 SCT2330 OPERATION Overview The SCT2330 device is 3.8V-32V input, 3A output, EMI friendly, fully integrated synchronous buck converters. The device employs fixed frequency peak current mode control. An internal clock with 400kHz frequency initiates turning on the integrated high-side power MOSFET Q1 in each cycle, then inductor current rises linearly and the converter charges output cap. When sensed voltage on high-side MOSFET peak current rising above the voltage of internal COMP (see functional block diagram), the device turns off high-side MOSFET Q1 and turns on low-side MOSFET Q2. The inductor current decreases when MOSFET Q2 is ON. In the next rising edge of clock cycle, the low-side MOSFET Q2 turns off. This repeats on cycle-by-cycle based. The peak current mode control with the internal loop compensation network and the built-in 4ms soft-start simplify the SCT2330 footprints and minimize the off-chip component counts. The error amplifier serves the COMP node by comparing the voltage on the FB pin with an internal 0.8V reference voltage. When the load current increases, a reduction in the feedback voltage relative to the reference raises COMP voltage till the average inductor current matches the increased load current. This feedback loop well regulates the output voltage. The device also integrates an internal slope compensation circuitry to prevent sub-harmonic oscillation when duty cycle is greater than 50% for a fixed frequency peak current mode control. The quiescent current of SCT2330 is 20uA typical under no-load condition and no switching. When disabling the device, the supply shut down current is only 1μA. The SCT2330 works at Pulse Skipping Mode PSM to further increase the power efficiency in light load condition, hence the power efficiency can be achieved up to 88% at 5mA load condition. The SCT2330 implements the Frequency Spread Spectrum (FSS) modulation spreading of ±6% centered 400kHz switching frequency. FSS improves EMI performance by not allowing emitted energy to stay in any one receiver band for a significant length of time. The converter has optimized gate driver scheme to achieve switching node voltage ringing-free without sacrificing the MOSFET switching time to further damping high frequency radiation EMI noise. The hiccup mode minimizes power dissipation during prolonged output overcurrent or short conditions. The hiccup wait time is 512 cycles and the hiccup restart time is 8192 cycles. The SCT2330 device also features protections including cycle-by-cycle high-side MOSFET peak current limit, over-voltage protection, and over-temperature protection. VIN Power The SCT2330 is designed to operate from an input voltage supply range between 3.8V to 32V, at least 0.1uF decoupling ceramic cap is recommended to bypass the supply noise. If the input supply locates more than a few inches from the converter, an additional electrolytic or tantalum bulk capacitor or with recommended 22uF may be required in addition to the local ceramic bypass capacitors. Under Voltage Lockout UVLO The SCT2330 Under Voltage Lock Out (UVLO) default startup threshold is typical 3.5V with VIN rising and shutdown threshold is 3.1V with VIN falling. The more accurate UVLO threshold can be programmed through the precision enable threshold of EN pin. Enable and Start up When applying a voltage higher than the EN high threshold (typical 1.18V/rise), the SCT2330 enables all functions and the device starts soft-start phase. The SCT2330 has the built in 4ms soft-start time to prevent the output 8 For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 SCT2330 overshoot and inrush current. When EN pin is pulled low, the internal SS net will be discharged to ground. Buck operation is disabled when EN voltage falls below its lower threshold (typically 1.1V/fall). An internal 1.5uA pull up current source connected from internal LDO power rail to EN pin guarantees that floating EN pin automatically enables the device. For the application requiring higher VIN UVLO voltage than the default setup, there is a 4uA hysteresis pull up current source on EN pin which configures the VIN UVLO voltage with an off-chip resistor divider R3 and R4, shown in Figure 12. The resistor divider R3 and R4 are calculated by equation (1) and (2). EN pin is a high voltage pin and can be directly connected to VIN to automatically start up the device with VIN rising to its internal UVLO threshold. VIN I2 4uA I1 1.5uA R3 20K EN + EN 1.21V R4 Figure 12. Adjustable VIN UVLO 𝑅3 = 𝑅4 = 𝑉𝑆𝑡𝑎𝑟𝑡 ( 𝑉𝐸𝑁𝐹 ) − 𝑉𝑆𝑡𝑜𝑝 𝑉𝐸𝑁𝑅 𝑉𝐸𝑁𝐹 𝐼1 (1 − 𝑉𝐸𝑁𝑅 ) + 𝐼2 𝑅3 × 𝑉𝐸𝑁𝐹 𝑉𝑆𝑡𝑜𝑝 − 𝑉𝐸𝑁𝐹 + 𝑅3 (𝐼1 + 𝐼2 ) (1) (2) Where: Vstart: Vin rise threshold to enable the device Vstop: Vin fall threshold to disable the device I1=1.5uA I2=4uA VENR=1.18V VEMF=1.1V EMI Reduction with Frequency Spread Spectrum and Switching Node Ringing-free In some applications, the system EMI test must meet EMI standards EN55011 and EN55022. To improve EMI performance, SCT2330 adopts Frequency Spread Spectrum (FSS) to spread the switching noise over a wider band and therefore reduces conducted and radiated interference peak amplitude at particular frequency. The SCT2330 features 400kHz switching frequency with spreading frequency of +/-6% and modulation rate 1/512 of switching frequency. The FSS technique effectively decreases the EMI noise by spreading the switching frequency from fixed 400kHz to a range 376kHz ~ 424Hz. As a result, the harmonic wave amplitude is reduced and the harmonic wave band is wider. For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 9 SCT2330 In buck converter, the switching node ringing amplitude and cycles are critical especially related to the high frequency radiation EMI noise. The SCT2330 implements the multi-level gate driver speed technique to achieve the switching node ringing-free without scarifying the switching node rise/fall slew rate and power efficiency of the converter. The switching node ringing amplitude and cycles are damped by the built-in MOSFETs gate driving technique (SCT Patented Proprietary Design). The switching node zoomed in wave form is shown in Figure 13. 5.5 Vout (V) 5.0 0-A 4.5 1-A 2-A 4.0 3-A 3.5 4 Figure 13. SCT2330 Switching Node Waveform 4.5 5 Vin (V) 5.5 6 6.5 Figure 14. SCT2330 LDO Mode Waveform Peak Current Limit and Hiccup Mode The SCT2330 has cycle-by-cycle peak current limit with sensing the internal high side MOSFET Q1 current during overcurrent condition. While the Q1 turns on, its conduction current is monitored by the internal sensing circuitry. Once the high-side MOSFET Q1 current exceeds the limit, it turns off immediately. If the Q1 over current time exceeds 512 switching cycles (hiccup waiting time), the buck converter enters hiccup mode and shuts down. After 8192 cycles off, the buck converter restarts to power up. The hiccup modes reduce the power dissipation in over current condition. Over Voltage Protection and Minimum On-time Both SCT2330 features buck converter output over voltage protection (OVP). If the output feedback pin voltage exceeds110% of feedback reference voltage (0.8V), the converter stops switching immediately. When the output feedback pin voltage drops below 105% of feedback reference voltage, the converter resumes to switching. The OVP function prevents the connected output circuitry damaged from un-predictive overvoltage. Featured feedback overvoltage protection also prevents dynamic voltage spike to damage the circuitry at load during fast loading transient. The high-side MOSFET Q1 has minimum on-time 80ns typical limitation. While the device operates at minimum ontime, further increasing VIN results in pushing output voltage beyond regulation point. With output feedback over voltage protection, the converter skips pulse by turning off high-side MOSFET Q1 and prevents output running away higher to damage the load. PSM Working Modes In heavy load condition, the SCT2330 forces the device operating at forced Pulse Width Modulation (PWM) mode. When the load current decreasing, the internal COMP net voltage decreases as the inductor current down. With the load current further decreasing, the COMP net voltage decreases and be clamped at a voltage corresponding to the 600mA peak inductor current. When the load current approaches zero, the SCT2330 enter Pulse Skipping Mode (PSM) mode to increase the converter power efficiency at light load condition. When the inductor current decreases to zero, zero-cross detection circuitry on high-side MOSFET Q1 forces the Q1 off till the beginning of the next switching cycle. The buck converter does not sink current from the load when the output load is light and converter works in PSM mode. 10 For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 SCT2330 Bootstrap Voltage Regulator An external bootstrap capacitor between BST and SW pin powers floating high-side power MOSFET gate driver. The bootstrap capacitor voltage is charged from an integrated voltage regulator when high-side power MOSFET is off and low-side power MOSFET is on. The floating supply (BST to SW) UVLO threshold is 2.7V rising and hysteresis of 350mV. When the converter operates with high duty cycle or prolongs in sleep mode for certain long time, the required time interval to recharging bootstrap capacitor is too long to keep the voltage at bootstrap capacitor sufficient. When the voltage across bootstrap capacitor drops below 2.35V, BST UVLO occurs. The SCT2330 intervenes to turn on low side MOSFET periodically to refresh the voltage of bootstrap capacitor to guarantee operation over a wide duty range. Low Drop-out Regulation To support the application of small voltage-difference between Vout and Vin, the Low Drop Out (LDO) Operation is implemented by the SCT2330. The Low Drop Out Operation is triggered automatic when the off time of the highside power MOSFET exceeds the minimum off time limitation. In low drop out operation, high-side MOSFET remains ON as long as the BST pin to SW pin voltage is higher than BST UVLO threshold. When the voltage from BST to SW drops below 2.35V, the high-side MOSFET turns off and low-side MOSFET turns on to recharge bootstrap capacitor periodically in the following several switching cycles. Only 100ns of low side MOSFET turning on in each refresh cycle minimizes the output voltage ripple. Low-side MOSFET may turn on for several times till bootstrap voltage is charged to higher than 2.7V for high-side MOSFET working normally. Then high-side MOSFET turns on and remains on until bootstrap voltage drops to trigger bootstrap UVLO again. Thus, the effective duty cycle of the switching regulator during Low Drop-out LDO operation can be very high even approaching 100% as shown in Figure 14. During ultra-low voltage difference of input and output voltages, i.e. the input voltage ramping down to power down, the output can track input closely thanks to LDO operation mode. Thermal Shutdown Once the junction temperature in the SCT2330 exceeds 160°C, the thermal sensing circuit stops converter switching and restarts with the junction temperature falling below 125°C. Thermal shutdown prevents the damage on device during excessive heat and power dissipation condition. . For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 11 SCT2330 APPLICATION INFORMATION Typical Application C5 330pF R1 158k R3 2k C4 0.1uF R2 30k ON OFF VIN=3.8V~32V C1 10uF FB BST EN SW VIN GND L1 10uH VOUT=5V C3 3 x 22uF C2 0.1uF Figure 15. 24V Input, 5V/3A Output Design Parameters 12 Design Parameters Example Value Input Voltage 24V Output Voltage 5V Output Current 3A Output voltage ripple (peak to peak) ±0.3V Switching Frequency 400kHz For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 SCT2330 Input Capacitor Selection For good input voltage filtering, choose low-ESR ceramic capacitors. A ceramic capacitor 10μF is recommended for the decoupling capacitor anda0.1μF ceramic bypass capacitor is recommended to be placed as close as possible to the VIN pin of the SCT2330. Use Equation (3) to calculate the input voltage ripple: ∆𝑉𝐼𝑁 = 𝐼𝑂𝑈𝑇 VOUT 𝑉𝑂𝑈𝑇 × × (1 − ) 𝐶𝐼𝑁 × 𝑓𝑆𝑊 VIN 𝑉𝐼𝑁 (3) Where:  CIN is the input capacitor value  fsw is the converter switching frequency  IOUT is the maximum load current Due to the inductor current ripple, the input voltage changes if there is parasitic inductance and resistance between the power supply and the VIN pin. It is recommended to have enough input capacitance to make the input voltage ripple less than 100mV. Generally, a 35V/10uF input ceramic capacitor is recommended for most of applications. Choose the right capacitor value carefully with considering high-capacitance ceramic capacitors DC bias effect, which has a strong influence on the final effective capacitance. Inductor Selection The performance of inductor affects the power supply’s steady state operation, transient behavior, loop stability, and buck converter efficiency. The inductor value, DC resistance (DCR), and saturation current influences both efficiency and the magnitude of the output voltage ripple. Larger inductance value reduces inductor current ripple and therefore leads to lower output voltage ripple. For a fixed DCR, a larger value inductor yields higher efficiency via reduced RMS and core losses. However, a larger inductor within a given inductor family will generally have a greater series resistance, thereby counteracting this efficiency advantage. Inductor values can have ±20% or even ±30% tolerance with no current bias. When the inductor current approaches saturation level, its inductance can decrease 20% to 35% from the value at 0-A current depending on how the inductor vendor defines saturation. When selecting an inductor, choose its rated current especially the saturation current larger than its peak current during the operation. To calculate the current in the worst case, use the maximum input voltage, minimum output voltage, maxim load current and minimum switching frequency of the application, while considering the inductance with -30% tolerance and low-power conversion efficiency. For a buck converter, calculate the inductor minimum value as shown in equation (4). 𝐿𝐼𝑁𝐷𝑀𝐼𝑁 = (4) 𝑉𝑂𝑈𝑇 × (𝑉𝐼𝑁𝑀𝐴𝑋 − 𝑉𝑂𝑈𝑇 ) 𝑉𝐼𝑁𝑀𝐴𝑋 × 𝐾𝐼𝑁𝐷 × 𝐼𝑂𝑈𝑇 × 𝑓𝑆𝑊 Where:  KIND is the coefficient of inductor ripple current relative to the maximum output current. Therefore, the peak switching current of inductor, I LPEAK, is calculated as in equation (5). 𝐼𝐿𝑃𝐸𝐴𝐾 = 𝐼𝑂𝑈𝑇 + 𝐾𝐼𝑁𝐷 × 𝐼𝑂𝑈𝑇 2 (5) Set the current limit of the SCT2330 higher than the peak current ILPEAK and select the inductor with the saturation current higher than the current limit. The inductor’s DC resistance (DCR) and the core loss significantly affect the efficiency of power conversion. Core loss is related to the core material and different inductors have different core For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 13 SCT2330 loss. For a certain inductor, larger current ripple generates higher DCR and ESR conduction losses and higher core loss. Output Capacitor Selection For buck converter, the output capacitor value determines the regulator pole, the output voltage ripple, and how the regulator responds to a large change in load current. The output capacitance needs to be selected based on the most stringent of these three criteria. For small output voltage ripple, choose a low-ESR output capacitor like a ceramic capacitor, for example, X5R and X7R family. Typically, 1~3x 22μF ceramic output capacitors work for most applications. Higher capacitor values can be used to improve the load transient response. Due to a capacitor’s de-rating under DC bias, the bias can significantly reduce capacitance. Ceramic capacitors can lose most of their capacitance at rated voltage. Therefore, leave margin on the voltage rating to ensure adequate effective capacitance. From the required output voltage ripple, use the equation (6) to calculate the minimum required effective capacitance, COUT. 𝐶𝑂𝑈𝑇 = ∆𝐼𝐿𝑃𝑃 8 × 𝑉𝑂𝑈𝑇𝑅𝑖𝑝𝑝𝑙𝑒 × 𝑓𝑆𝑊 (6) Where  VOUTRipple is output voltage ripple caused by charging and discharging of the output capacitor.  ΔILPP is the inductor peak to peak ripple current, equal to kIND * IOUT.  ƒSW is the converter switching frequency. The allowed maximum ESR of the output capacitor is calculated by the equation (7). 𝑅𝐸𝑆𝑅 = 𝑉𝑂𝑈𝑇𝑅𝑖𝑝𝑝𝑙𝑒 ∆𝐼𝐿𝑃𝑃 (7) The output capacitor affects the crossover frequency ƒC. Considering the loop stability and effect of the internal loop 1 compensation parameters, choose the crossover frequency less than 55 kHz (10 × fSW ) without considering the feedforward capacitor. A simple estimation for the crossover frequency without feed forward capacitor is shown in equation (8), assuming COUT has small ESR. 𝐶𝑂𝑈𝑇 > 18𝑘 × 𝐺𝑀 × 𝐺𝑀𝑃 × 0.8𝑉 2𝜋 × 𝑉𝑂𝑈𝑇 × 𝑓𝐶 (8) Where  GM is the transfer conductance of the error amplifier (300uS).  GMP is the gain from internal COMP to inductor current, which is 5A/V.  fC is the cross over frequency. Additional capacitance de-rating for aging, temperature and DC bias should be factored in which increases this minimum value. Capacitors generally have limits to the amount of ripple current they can handle without failing or producing excess heat. An output capacitor that can support the inductor ripple current must be specified. The capacitor data sheets specify the RMS (Root Mean Square) value of the maximum ripple current. Equation (9) can be used to calculate the RMS ripple current the output capacitor needs to support. 𝐼𝐶𝑂𝑈𝑇𝑅𝑀𝑆 = 𝑉𝑂𝑈𝑇 ∙ (𝑉𝐼𝑁 − 𝑉𝑂𝑈𝑇 ) √12 ∙ 𝑉𝐼𝑁 ∙ 𝐿𝐼𝑁𝐷 ∙ 𝑓𝑆𝑊 (9) Output Feed-Forward Capacitor Selection 14 For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 SCT2330 The SCT2330 has the internal integrated loop compensation as shown in the function block diagram. The compensation network includes a 18k resistor and a 7.6nF capacitor. Usually, the type II compensation network has a phase margin between 60 and 90 degree. However, if the output capacitor has ultra-low ESR, the converter results in low phase margin. To increase the converter phase margin, a feed-forward cap Cff is used to boost the phase margin at the converter cross-over frequency fc. Equation (10) is used to calculate the feed-forward capacitor. 𝐶𝑓𝑓 = 1 2𝜋 ∙ 𝑓𝐶 × 𝑅1 (10) Output Feedback Resistor Divider Selection The SCT2330 features external programmable output voltage by using a resistor divider network R1 and R2 as shown in the typical application circuit Figure15. Use equation (11) to calculate the resistor divider values. 𝑅1 = (𝑉𝑂𝑈𝑇 − 𝑉𝑟𝑒𝑓 ) × 𝑅2 𝑉𝑟𝑒𝑓 (11) Set the resistor R2 value to be approximately 30k. Slightly increasing or decreasing R1 can result in closer output voltage matching when using standard value resistors. Table 1. Recommended External Components Vout L1 COUT R1 R2 R3 Cf 3.3V 6.5uH 3*22uF 93.5k 30k 2k 330p 5V 10uH 3*22uF 158k 30k 2k 330p 12V 22uH 3*22uF 422k 30k 2k 330p For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 15 SCT2330 Application Waveforms Figure 16. SW node waveform and Output Ripple VIN=24V, IOUT=3A Figure 19. Power Down VIN=24V, VOUT=5V, IOUT=3A Figure 18. Power Up VIN=24V, VOUT=5V, IOUT=3A Figure 20. Load Transient VOUT=5V, IOUT=0.3A to 2.7A, SR=250mA/us 16 For more information www.silicontent.com Figure 17. SW node Waveform and Output Ripple VIN=24V, IOUT=10mA Figure 21. Load Transient VOUT=5V, IOUT=0.75A to 2.25 A, SR=250mA/us © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 SCT2330 Layout Guideline The regulator could suffer from instability and noise problems without carefully layout of PCB. Radiation of highfrequency noise induces EMI, so proper layout of the high-frequency switching path is essential. Minimize the length and area of all traces connected to the SW pin, and always use a ground plane under the switching regulator to minimize coupling. The input capacitor needs to be very close to the VIN pin and GND pin to reduce the input supply ripple. Place the capacitor as close to VIN pin as possible to reduce high frequency ringing voltage on SW pin as well. Figure 22 is the recommended PCB layout of SCT2330. The layout needs be done with well consideration of the thermal. A large top layer ground plate using multiple thermal vias is used to improve the thermal dissipation. The bottom layer is a large ground plane connected to the top layer ground by vias. FB BST EN SW VIN GND Via VOUT Via Figure 22. PCB Layout Example Thermal Considerations The maximum IC junction temperature should be restricted to 125°C under normal operating conditions. Calculate the maximum allowable dissipation, PD(max), and keep the actual power dissipation less than or equal to PD(max) . The maximum-power-dissipation limit is determined using Equation (12). 𝑃𝐷(𝑀𝐴𝑋) = 125 − 𝑇𝐴 𝑅θJA (12) where  TA is the maximum ambient temperature for the application.  RθJA is the junction-to-ambient thermal resistance given in the Thermal Information table. The real junction-to-ambient thermal resistance RθJA of the package greatly depends on the PCB type, layout, thermal pad connection and environmental factor. Using thick PCB copper and soldering the GND to a large ground plate enhance the thermal performance. Using more vias connects the ground plate on the top layer and bottom layer around the IC without solder mask also enhance the thermal capability. For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 17 SCT2330 PACKAGE INFORMATION TOP VIEW BOTTOM VIEW SYMBOL SIDE VIEW NOTE: 1. 2. 3. 4. 5. 6. Drawing proposed to be made a JEDEC package outline MO220 variation. Drawing not to scale. All linear dimensions are in millimeters. Thermal pad shall be soldered on the board. Dimensions of exposed pad on bottom of package do not include mold flash. Contact PCB board fabrication for minimum solder mask web tolerances between the pins. 18 For more information www.silicontent.com A A1 A2 D E E1 b c e L ɵ Unit: Millimeter MIN TYP MAX ------1.10 0.000 0.10 0.70 1.00 2.85 2.95 2.65 2.95 1.55 1.65 0.30 0.50 0.08 0.20 0.95(BSC) 0.30 0.60 0º 8º © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 SCT2330 TAPE AND REEL INFORMATION Feeding Direction For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330 19 SCT2330 RELATED PARTS PN SCT2320 SCT2321 DESCRIPTION COMMENTS 3.8V-32V Vin, 2A Synchronous Step-down DCDC Converter with EMI Reduction     SCT2323 SCT2325 3.8V-32V Vin, 2A Synchronous Step-down DCDC Converter with EMI Reduction        SCT2331 3.8V-32V Vin, 3A Synchronous Step-down DCDC Converter with EMI Reduction      500KHz switching frequency 2A Continuous output current EMI reduction with switching node ringing-free. Ultra-low quiescent current. High efficiency PFM at light load (SCT2320) Frequency Spread Spectrum (SCT2320) Fixed PWM mode for lower output ripple (SCT2321) 1100KHz switching frequency Fixed output 3.3V (SCT2323)/5V (SCT2325) 2A Continuous output current EMI reduction with switching node ringing-free. Ultra-low quiescent current. High efficiency PFM at light load Frequency Spread Spectrum 400KHz switching frequency 3A Continuous output current EMI reduction with switching node ringing-free. Fixed PWM mode for lower output ripple VS BST EN SW VIN GND C2 0.1uF L1 10uH VOUT=5V ON OFF VIN=4V-28V C1 10uF C3 22uF C2 0.1uF Figure 23. SCT2325 Typical Application NOTICE: The information in this document is subject to change without notice. Users should warrant and guarantee the third party Intellectual Property rights are not infringed upon when integrating Silicon Content Technology (SCT) products into any application. SCT will not assume any legal responsibility for any said applications. 20 For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2330
SCT2330TVBR 价格&库存

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SCT2330TVBR
    •  国内价格
    • 1+4.13640
    • 10+3.40200
    • 30+3.03480
    • 100+2.66760
    • 500+2.30040
    • 1000+2.18160

    库存:1179