SESD5Z5CL

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SESD5Z5CL Transient Voltage Suppressors for ESD Protection General Description Revision:C Features The SESD5Z5CL is designed to protect voltage z Small Body Outline Dimensions sensitive components from ESD and transient voltage z Low Body Height events. Excellent clamping capability, low leakage, and z Peak Power up to 75 Watts @ 8 x 20 _µs Pulse fast response time, make these parts ideal for ESD z Low Leakage current protection on designs where board space is at a z Response Time is Typically < 1 ns premium. Complies with the following standards Applications z Cellular phones z Portable devices z Digital cameras z Power supplies IEC61000-4-2 Level 4 15 kV (air discharge) 8 kV(contact discharge) MIL STD 883E - Method 3015-7 Class 3 25 kV HBM (Human Body Model) Functional diagram SOD-523 Absolute Ratings (Tamb=25°C ) Symbol Parameter Value Units PPP Peak Pulse Power (tp = 8/20μs) 75 W TL Maximum lead temperature for soldering during 10s 260 °C Tstg Storage Temperature Range -55 to +155 °C Top Operating Temperature Range -40 to +125 °C Tj Maximum junction temperature 150 °C ±15 ±8 kV 40 A 16 kV 400 V 6.2A 12 V 5.2A 11.4 IEC61000-4-2 (ESD) air discharge contact discharge IEC61000-4-4 (EFT) ESD Voltage Per Human Body Model Per Machine Model VC Ipp (Peak Pulse Current tp=8/20us) ShangHai Sino-IC Microelectronics Co., Ltd. 1. SESD5Z5CL Electrical Parameter Symbol IPP VC VRWM IR IT VBR Parameter Reverse Peak Maximum Current Clamping Voltage @ IPP Pulse Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Test Current Breakdown Voltage @ IT Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA VBR Part Numbers SESD5Z5CL IT VRWM IR VF IF C Max. Typ. Typ. 0v bias Min. Typ. Max. V V V mA V µA V mA pF 5.8 6.7 7.8 1 5.0 1 1.25 200 3 *Surge current waveform per Figure 1. 1. VBR is measured with a pulse test current IT at an ambient temperature of 25℃． Typical Characteristics Fig1. Pulse Waveform ShangHai Sino-IC Microelectronics Co., Ltd. Fig2.Power Derating Curve 2. SESD5Z5CL Application Note Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming transient to a low enough level such that damage to the protected semiconductor is prevented. Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel protection elements, connected between the signal lines to ground. As the transient rises above the operating voltage of the device, the TVS becomes a low impedance path diverting the transient current to ground. The SESD5Z5C is the ideal board evel protection of ESD sensitive semiconductor components. The tiny SOD-523 package allows design flexibility in the design of high density boards where the space saving is at a premium. This enables to shorten the routing and contributes to hardening against ESD. SOD-523 Mechanical Data Millimeters Dim INCHES MIN NOM MAX MIN NOM MAX A 1.10 1.20 1.30 0.043 0.047 0.051 B 0.70 0.80 0.90 0.028 0.032 0.035 C 0.50 0.60 0.70 0.020 0.024 0.028 D 0.25 0.30 0.35 0.010 0.012 0.014 J 0.07 0.14 0.20 0.0028 0.0055 0.0079 K 0.15 0.20 0.25 0.006 0.008 0.010 S 1.50 1.60 1.70 0.059 0.063 0.067 The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 3.