GPU450HF120D2SE

GPU450HF120D2SE PreliminaryData 1200V/450A 2 in one-package Features： 1200V/450A,VCE(sat)(typ)=2.60V SPT（Soft Punch Through）technology Lower losses Higher system efficiency Excellent short-circuit capability Square RBSOA General Applications： Daxin’s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequency applications Equivalent Circuit Schematic Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±30 V IC Continuous Collector Current TC = 25°C 900 TC = 100°C 450 A ICM Pulse Collector Current TJ = 150°C 900 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 1360 W tsc Short Circuit Withstand Time > 10 µs TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature Range -40 to +125 °C 1200 V Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage IF Diode Continuous Forward Current IFM Diode Maximum Forward Current -1- www.daxin-semi.com Preliminary Data TC = 25°C 900 TC = 100°C 450 A 900 Rev.1 A 2018 GPU450HF120D2SE Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Test Conditions Min 1200 BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA ICES Collector to Emitter Leakage Current VGE = 0V,VCE = VCES IGES Gate to Emitter Leakage Current VGE = ±30V, VCE = 0V VGE(th) Gate Threshold Voltage IC = 2mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage (Module Level) IC = 450A, VGE = 15V TJ = 25°C Typ Max Unit V 4.5 2.60 5 mA 400 nA 5.7 V 2.80 V TJ = 125°C 3.00 Switching Characteristics of IGBT td(on) tr TJ = 25°C 65 TJ = 125°C 70 TJ = 25°C 110 TJ = 125°C 120 TJ = 25°C 520 TJ = 125°C 580 TJ = 25°C 100 TJ = 125°C 130 TJ = 25°C 20.5 TJ = 125°C 31.0 TJ = 25°C 35.0 TJ = 125°C 52.0 TJ = 25°C 4560 nC TJ = 25°C 2.5 Ω TJ = 25°C 21.5 TJ = 25°C 3.30 TJ = 25°C 1.90 ns Turn-on Delay Time Turn-on Rise Time td(off) tf Turn-off Delay Time Turn-off Fall Time Eon ns ns VCC = 900V IC = 450A RG = 1.1Ω VGE = ±15V Inductive Load ns Turn-on Switching Loss Eoff mJ mJ Turn-off Switching Loss Qg Total Gate Charge Rgint Integrated gate resistor Cies Input Capacitance f = 1M; Vpp = 1V VCE = 25V VGE = 0V f = 1MHz Coes Output Capacitance Cres Reverse Transfer Capacitance RθJC Thermal Resistance, Junction-to-Case (IGBT) -2- www.daxin-semi.com nF 0.092 Rev.1 2018 °C/W GPU450HF120D2SE Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage IF = 450A , VGE = 0V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr IF = 450A, di/dt=8500A/µs, Vrr = 600V, Diode Reverse Recovery Energy Err RθJC 1.90 TJ = 125°C 1.90 TJ = 25°C 230 TJ = 125°C 400 TJ = 25°C 450 2.20 V ns Diode Reverse Recovery Charge Qrr TJ = 25°C A TJ = 125°C 760 TJ = 25°C 58.0 TJ = 125°C 85.0 TJ = 25°C 18.0 TJ = 125°C 29.5 nC mJ Thermal Resistance, Junction-to-Case (Diode) 0.095 °C/W Module Characteristics Parameter Min. Typ. Max. Unit Viso Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute RθCS Case-To-Sink(Conductive Grease Applied) M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight -3- 2500 V 0.1 °C/W 315 www.daxin-semi.com Rev.1 g 2018 GPU450HF120D2SE Fig 1. output characteristic IGBT， IC=f(VCE),VGE=15V Fig 2. output characteristic IGBT， IC=f(VCE),Tj=125℃ Fig 3. transfer characteristic IGBT， IC=f(VGE),VCE=20V Fig 4. switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=±15V,RGon=1.1Ω,RGoff=1.1Ω,VCE=600V -4- www.daxin-semi.com Rev.1 2018 GPU450HF120D2SE Fig 5. switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=±15V,IC=300A,VCE=600V Fig 7. reverse bias safe operating area IGBT, IC=f(VCE),VGE=±15V,RGoff=3.3Ω，Tvj=125℃ -5- www.daxin-semi.com Fig 6. transient thermal impedance IGBT , Zthjc=f(t) Fig 8. forward characteristic of Diode ， IF=f(VF) Rev.1 2018 GPU450HF120D2SE Internal Circuit: Package Dimension Dimensions in Millimeters -6- www.daxin-semi.com Rev.1 2018