WPT2N31-6/TR

WPT2N31 WPT2N31 Http://www.sh-willsemi.com Single, PNP, -30V, -3A, Power Transistor with 20V N-MOSFET Descriptions The WPT2N31 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. Standard Product WPT2N31 is Pb-free. Pin configuration (Top view) Features  Ultra low collector-to-emitter saturation voltage  High DC current gain >100  3A continue collector current  Small package DFN2x2-6L  MSL: level 3  ESD HBM Class:1C,MM Class:1 2N31 = Device Code YY =Year WW =Week Marking Order information Device Package Shipping WPT2N31-6/TR DFN2*2-6L 3000/Reel&Tape Applications  Charging circuit  Other power management in portable equipments Will Semiconductor Ltd. 1 Jan.2019 – Rev.1.3 WPT2N31 Absolute Maximum ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO -30 V Collector-base voltage VCBO -30 V Emitter-base voltage VEBO -6 V Continues collector current IC -3 A Pulse collector current ICM -6 A Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±6 V ID 1.7 A IDM 6 A Power dissipation PD 1.2 W Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55〜155 °C Symbol Value Unit RƟJA 104 °C/W PNP Transistor N-MOSFET Continuous Drain Current Pulsed Drain Current a Power Dissipation and temperature Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Pulse width=300μs, Duty Cycle