WS72541B-5/TR

WS72541 WS72541 Low-Power Rail-to-Rail Operational Amplifiers Input Output Http//:www.willsemi.com Descriptions The WS72541 series is a single low-voltage operational amplifier with rail-to-rail input/output swing. Ultra low quiescent current makes this amplifier ideal SOT353 SOT23-5L for portable, battery operated equipment. The common mode input range includes ground making the device useful for low−side current−shunt measurements. The OUT 1 ultra small packages allow for placement on the PCB V- 2 in close proximity to the signal source thereby reducing +IN 3 5 4 V+ -IN +IN 1 V- 2 -IN 3 5 V+ 4 OUT noise pickup. SOT23-5L The WS72541 is available with MSL 3 Level in SOT353/SOT23-5L Pin configuration (Top view) SOT353(SC70-5L) package and SOT23-5L package. Standard products are Pb-Free and halogen-Free. Applications  Active Filters  Smoke/Gas Sensors  Battery Powered Electronic Equipments  Personal Medical Care GBYW 2541 GEYW SOT353 SOT23-5L Marking Features 2541 = Device code  Single Supply Voltage : 1.8~5.5V GB = Special code  Quiescent Current : 48A Typical GE = Special code  GBWP : 2MHz Y = Year code  Slew Rate : 1.4V/s W = Week code  Offset Voltage : 2mV Maximum  Offset Voltage Temp. Drift : 0.5V / °C  THD+N :-102dB@1kHz, Order Information Device Package WS72541B-5/TR SOT353 WS72541E-5/TR SOT23-5L -90dB@10kHz  CMRR/PSRR : 104dB/111dB  Output Short-Circuit Curr. : 43mA  -40°C to 125°C Operation Range  Drives 2kΩ Resistive Loads  No Output Crossover Distortion  No Phase Reversal from Overdriven Input  Rail-to-Rail Input/Output Swing Will Semiconductor Ltd. 1 Shipping 3000/Reel &Tape 3000/Reel &Tape Jul, 2019 - Rev. 1.0 WS72541 Pin Descriptions (WS72541B-5/TR & WS72541E-5/TR) Pin Number Symbol Descriptions 1 +IN 2 V- Negative supply 3 -IN Inverting input 4 OUT 5 V+ Non-inverting input Output Positive supply Absolute Maximum Ratings Parameter Supply Voltage, ([V+] - [V-]) Input Differential Voltage Symbol Value Unit (2) VS (3) VIDR 6 V 6 - V + Input Common Mode Voltage Range VICR (V )-0.2 to (V )+0.2 Output Short-Circuit Duration tSO Unlimited / -40 to 125 ° -65 to 150 ° 150 ° 260 ° Operating Fee-Air Temperature Range TA Storage Temperature Range TSTG Junction Temperature Range TJ Lead Temperature Range TL V C C C C Note: 1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are only stress ratings, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions are not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. All voltage values, except differential voltage are with respect to network terminal. 3. Differential voltages are at +IN with respect to –IN. ESD, Electrostatic Discharge Protection Symbol HBM Parameter Human Body Model ESD Condition MIL-STD-883H Method 3015.8 Minimum level Unit ±8000 V JEDEC-EIA/JESD22-A114A MM CDM Machine Model ESD JEDEC-EIA/JESD22-A115 ±500 V Charged Device Model ESD JEDEC-EIA/JESD22-C101E ±2000 V Will Semiconductor Ltd. 2 Jul, 2019 - Rev. 1.0 WS72541 Electronics Characteristics The *denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VS = 5V, VCM = VOUT = VS/2, Rload = 100kΩ, Cload = 100pF. Symbol Parameter Conditions VCM= VS/2 Min. Typ. Max. Unit -2.0 0.1 2.0 mV VOS Input Offset Voltage VOS Input Offset Voltage Drift 0.5 μV/°C IIB Input Bias Current 10 pA IOS Input Offset Current 10 pA Vn Input Voltage Noise f=0.1Hz to10Hz 4 VP-P en Input Voltage Noise Density f=1kHz 30 f=10kHz 23 CMRR Common Mode Rejection Ratio VCM=0.1V to 4.9V * * 80 - nV/√Hz 104 dB + VCM Common Mode Input Voltage Range * (V )-0.2 PSRR Power Supply Rejection Ratio * 80 111 dB AVOL Open Loop Large Signal Gain * 100 108 dB VOH High Level Output Voltage VOL Low Level Output Voltage ISC Output Short-Circuit Current IQ Quiescent Current PM Phase Margin GM Gain Margin GBWP Gain-Bandwidth Product Settling tS Time VOUT=0.1V to 4.9V, Rload=10k Rload=2k 50 Rload=10k 5 Rload=2k 40 Rload=10k 5 Source Current 43 Sink Current 47 * Rload=100k, Cload=100pF Rload=100k, Cload=100pF 1.5 to 3.5V, Unity Gain 2.45 to 2.55V, Unity Gain (V )+0.2 f=1kHz 48 V mV mV mA A 65 60 degrees -14 dB 2 MHz 0.1% 1.9 0.1% 0.29 s AV=1, VOUT=1.5V SR Slew Rate to 3.5V, Rload=100k, 1.4 V/s 240 kHz Cload=100pF FPBW Full Power Bandwidth 2VP-P f=1kHz, AV=1, Rload=100k, THD+N Total Harmonic Distortion and Noise -102 VOUT=2VPP dB f=10kHz, AV=1, Rload=100k, -90 VOUT=2VPP Will Semiconductor Ltd. 3 Jul, 2019 - Rev. 1.0 WS72541 Note: 1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. 2. A heat sink may be required to keep the junction temperature below the absolute maximum rating when the output is shorted indefinitely. 3. Thermal resistance varies with the amount of PC board metal connected to the package. The specified values are for short traces connected to the leads. 4. Full power bandwidth is calculated from the slew rate FPBW = SR/(π • VP-P). Will Semiconductor Ltd. 4 Jul, 2019 - Rev. 1.0 WS72541 Typical Characteristics TA=25°C, VS=±2.5V, VCM=0V, unless otherwise noted Small-Siganl Step Response, 100mV Step Large-Siganl Step Response, 2V Step Over Shoot Voltage, Cload=47nF, Over Shoot Voltage, Cload=47nF, RFB=10kΩ, Gain=+1 Rload=40kΩ, Gain=-1 Open-Loop Gain and Phase Phase Margin vs. Cload (Stable for Any Cload) 180 120 90 60 30 0 -30 -60 100 Gain=+1 Rload=100k 70 Phase Margin() 150 Gain and Phase 80 Cload=100pF Rload=100k Gain Phase 60 50 40 30 20 10 1k 10k 100k 0 10 1M Frequency(Hz) Will Semiconductor Ltd. 100 1k 10k 100k 1M Load Capacitance(pF) 5 Jul, 2019 - Rev. 1.0 WS72541 Typical Characteristics (continued) TA=25°C, VS=±2.5V, VCM=0V, unless otherwise noted Input Offset Voltage vs. Temperature CMRR vs. Frequency Input Offset Voltage(mV) 0.0 140 120 -0.4 CMRR(dB) 100 -0.8 -1.2 80 60 40 -1.6 20 -2.0 -50 -25 0 25 50 75 100 0 10 125 100 1k Temperature(C) Over-Shoot % vs. Cload Gain=-1, RFB=20kΩ Gain=+1 over shoot and Under shoot(%) over shoot and Under shoot(%) 1M 80 Gain=-1 70 Over shoot Under shoot 60 50 40 30 20 10 0 100 1k 10k 100k Gain=+1 70 Under shoot 50 40 30 20 10 0 100 1M 10k 100k 1M Frequency(Hz) Will Semiconductor Ltd. 10k 100k 1M Closed-Loop Output Impedance vs. Frequency Close-loop Output lmpedance() 1k 1k Load Capacitance(pF) PSRR vs. Frequency 100 Over shoot 60 Load Capacitance(pF) PSRR(dB) 100k Over-Shoot % vs. Cload 80 120 110 100 90 80 70 60 50 40 30 20 10 0 10 10k Frequency(Hz) 110 100 90 80 70 60 50 40 30 20 10 0 1k 10k 100k 1M Frequency(Hz) 6 Jul, 2019 - Rev. 1.0 WS72541 Typical Characteristics (continued) TA=25°C, VS=±2.5V, VCM=0V, unless otherwise noted Quiescent Supply Current vs. Supply Voltage 56 58 54 56 Quiescent Current (uA) Quiescent Current (uA) Quiescent Supply Current vs. Temperature 52 50 48 46 44 54 52 50 48 46 44 42 42 -50 -25 0 25 50 75 100 40 2.0 125 Temperature(C) 4.0 4.5 30 5.0 5.5 6.0 Production Packaged Units 2,700 Samples 25 Percentage(%) Short-Circuit Current(mA) 3.5 Input Offset Voltage Distribution 20 15 10 5 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 6.0 -2 Supply voltage(V) THD+Noise vs. Vin+ -1 0 1 Input Offset Voltage(mV) 2 THD+Noise vs. Frequency -20 -60 Rload=100k Cload=100pF f=1kHz Gain=1 -30 -40 -70 -50 -60 -70 -80 -90 -75 -80 -85 -90 -100 -95 -110 -100 -120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -105 1k VIN+ (Vpp) Will Semiconductor Ltd. Rload=100k Cload=100pF VIN+=2VPP Gain=+1 -65 THD+N(dB) THD+N(dB) 3.0 Supply Voltage(V) Short-Circuit Current vs. Supply Voltage 60 55 50 45 40 35 30 25 20 15 10 5 0 2.0 2.5 7 Frequency(Hz) 10k Jul, 2019 - Rev. 1.0 WS72541 Typical Characteristics (continued) TA=25°C, VS=±2.5V, VCM=0V, unless otherwise noted VIN=-0.2V to 5.7V, No Phase Reversal 0.1Hz to 10Hz Integrated Input Noise, Gain = 10000 Will Semiconductor Ltd. 8 Jul, 2019 - Rev. 1.0 WS72541 PACKAGE OUTLINE DIMENSIONS SOT-353(SC70-5L) D θ b K L1 L M E E1 (Ⅰ) (Ⅱ) c e e1 A A1 SIDE VIEW A2 TOP VIEW SIDE VIEW Symbol Dimensions in Millimeters Min. Typ. Max. A 0.80 0.95 1.10 A1 0.00 - 0.10 A2 0.80 0.90 1.00 b 0.15 0.25 0.35 c 0.08 - 0.20 D 2.00 2.10 2.20 E1 1.15 1.25 1.35 E 2.15 2.30 2.45 e e1 0.65 Typ. 1.20 1.30 L1 1.40 0.50 Ref. L 0.26 0.36 0.46 M 0.10 0.15 0.25 K 0.00 - 0.25 θ 0︒ - 14︒ Will Semiconductor Ltd. 9 Jul, 2019 - Rev. 1.0 WS72541 TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm P1 Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Pin1 Quadrant Q1 Q2 Q3 Will Semiconductor Ltd. 10 Q4 Jul, 2019 - Rev. 1.0 WS72541 PACKAGE OUTLINE DIMENSIONS SOT-23-5L D θ b K L1 L M E E1 (Ⅰ) (Ⅱ) c e e1 A A1 SIDE VIEW A2 TOP VIEW SIDE VIEW Symbol Dimensions in Millimeters Min. Typ. Max. A - - 1.45 A1 0.00 - 0.15 A2 0.90 1.10 1.30 b 0.30 0.40 0.50 c 0.10 - 0.21 D 2.72 2.92 3.12 E 2.60 2.80 3.00 E1 1.40 1.60 1.80 e 0.95 BSC e1 1.90 BSC L 0.30 0.45 0.60 M 0.10 0.15 0.25 K 0.00 - 0.25 θ 0° - 8° Will Semiconductor Ltd. 11 Jul, 2019 - Rev. 1.0 WS72541 TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 12 Q4 Jul, 2019 - Rev. 1.0