CS7N65F

nvert CS7N65F,CS7N65P, CS7N65K Suzho u Con vert Semiconductor Co ., Ltd. 650V N-Channel MOSFET FEATURES ⚫ Fast switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability APPLICATIONS ⚫ Switch Mode Power Supply (SMPS) ⚫ Uninterruptible Power Supply (UPS) ⚫ Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS7N65F TO-220F CS7N65F CS7N65P TO-220 CS7N65P CS7N65K TO-262 CS7N65K Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Value Parameter Symbol Unit TO-220F Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage TO-262 TO-220 VDSS 650 V ID 7 A IDM 28 A VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 165 mJ Avalanche Current (note1) IAS 5.76 A Repetitive Avalanche Energy (note1) EAR 100 mJ Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range PD 63 TJ, Tstg 97 W -55~+150 ºC Thermal Resistance Value Parameter Symbol Unit TO-220F TO-262 TO-220 Thermal Resistance, Junction-to-Case RthJC 1.98 1.29 Thermal Resistance, Junction-to-Ambient RthJA 62.5 60 K/W Suzhou Convert SemiConductor Co.,Ltd. 1 V3.0 nvert CS7N65F,CS7N65P, CS7N65K Suzho u Con vert Semiconductor Co ., Ltd. Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 650 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V, TJ = 25ºC -- -- 1 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 3.5A -- 1.1 1.35 Ω -- 891 -- -- 87 -- Dynamic Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 10 -- Total Gate Charge Qg -- 32 -- Gate-Source Charge Qgs -- 4.6 -- Gate-Drain Charge Qgd -- 14 -- Turn-on Delay Time td(on) -- 39 -- Turn-on Rise Time tr -- 23 -- Turn-off Delay Time td(off) -- 137 -- -- 30 -- -- -- 7.0 -- -- 28 Turn-off Fall Time VDD = 520V, ID = 7A, VGS = 10V VDD = 325V, ID = 7A, RG = 25 Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25 ºC A Pulsed Diode Forward Current ISM Body Diode Voltage VSD TJ = 25ºC, ISD = 3.5A, VGS = 0V -- -- 1.4 V Reverse Recovery Time trr -- 575 -- ns Reverse Recovery Charge Qrr VGS = 0V,IS = 7A, diF/dt =100A /μs -- 1.9 -- μC Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=10mH, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% Suzhou Convert SemiConductor Co.,Ltd. 2 V3.0 nvert CS7N65F,CS7N65P, CS7N65K Suzho u Con vert Semiconductor Co ., Ltd. Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics (TJ = 25ºC) Figure 2. Body Diode Forward Voltage 10 8 7 6 IS, Source Current (A) 20V 10V 8V 7V 6V 5V 9 ID, Drain Current (A) 102 5 4 3 2 TJ = 150ºC 101 TJ = 25ºC 100 1 10-1 0 0 2 4 6 8 10 12 14 16 18 0.4 20 VDS, Drain-to-Source Voltage (V) 1.6 2 Figure 4. BVDSS Variation vs. Temperature 1.2 BVDSS (Normalized) 8 ID, Drain Current (A) 1.2 VSD, Source-to-Drain Voltage (V) Figure 3. Drain Current vs. Temperature 6 4 VGS = 0V ID = 250μA 1.1 1 2 0.9 0 25 50 75 100 125 -50 150 TJ, Case Temperature (ºC) RDS(on), On-Resistance (Normalized) TJ = 25ºC 6 5 4 TJ = 150ºC 3 2 1 0 0 2 4 6 8 10 VGS, Gate-to-Source Voltage (V) Suzhou Convert SemiConductor Co.,Ltd. 0 25 50 75 100 125 150 Figure 6. On-Resistance vs. Temperature 8 7 -25 TJ, Junction Temperature (ºC) Figure 5. Transfer Characteristics ID, Drain Current (A) 0.8 3 VGS = 10V ID=3.5A 2.5 2 1.5 1 0.5 0 -50 0 50 100 150 TJ, Junction Temperature (ºC) 3 V3.0 nvert CS7N65F,CS7N65P, CS7N65K Suzho u Con vert Semiconductor Co ., Ltd. Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Capacitance Figure 8. Gate Charge VGS, Gate-to-Source Voltage (V) 104 Capacitance (pF) Ciss 103 Coss 102 Crss 101 VGS = 0V f = 1MHz VDD = 130V VDD = 325V VDD = 520V 100 VDS, Drain-to-Source Voltage (V) Qg, Total Gate Charge (nC) Figure 9. Transient Thermal Impedance Figure 10. Transient Thermal Impedance TO-262,TO-220 TO-220F 101 ZthJC, Thermal Impedance (K/W) ZthJC, Thermal Impedance (K/W) 101 100 10-1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-2 10-3 10-7 10-6 10-5 10-4 10-3 10-2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-6 10-1 Tp, Pulse Width (s) Suzhou Convert SemiConductor Co.,Ltd. 100 10-5 10-4 10-3 10-2 10-1 100 101 Tp, Pulse Width (s) 4 V3.0 nvert CS7N65F,CS7N65P, CS7N65K Suzho u Con vert Semiconductor Co ., Ltd. Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform Suzhou Convert SemiConductor Co.,Ltd. 5 V3.0 nvert CS7N65F,CS7N65P, CS7N65K Suzho u Con vert Semiconductor Co ., Ltd. TO-220F Suzhou Convert SemiConductor Co.,Ltd. 6 V3.0 nvert CS7N65F,CS7N65P, CS7N65K Suzho u Con vert Semiconductor Co ., Ltd. TO-220 Suzhou Convert SemiConductor Co.,Ltd. 7 V3.0 nvert Suzho u Con vert Semiconductor Co ., Ltd. CS7N65F,CS7N65P, CS7N65K TO-262 Suzhou Convert SemiConductor Co.,Ltd. 9 V3.0 nvert CS7N65F,CS7N65P, CS7N65K Suzho u Con vert Semiconductor Co ., Ltd. Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Suzhou Convert does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Suzhou Convert. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless. 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