2SC945P

2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Power Dissipation Ptot 250 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group Collector Base Cutoff Current at VCB = 40 V Emitter Base Cutoff Current at VEB = 3 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 6 V, IC = 10 mA Output Capacitance at VCB = 6 V, f = 1 MHz R O Y P L C C Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 40 70 120 200 350 - 80 140 240 400 700 - ICBO - - 100 nA IEBO - - 100 nA V(BR)CBO 60 - - V V(BR)CEO 50 - - V V(BR)EBO 5 - - V VCE(sat) - - 0.3 V fT - 300 - MHz Cob - 2.5 - pF SEMTECH ELECTRONICS LTD. ® Dated：12/08/2016 Rev：02 2SC945 h FE - I C 360 Power Dissipation vs Ambient Temperature pulse d 320 300 280 DC CURRENT GAIN Power Dissipation: Ptot (mW) 250 200 150 100 50 240 VCE=6.0V 200 160 3.0V 120 2.0V 80 1.0V 0.5V 40 0 0 0 25 50 125 100 75 150 0.1 0.01 1 10 100 Ambient Temperature: Ta ( C) O COLLECTOR CURRENT, mA Collector current vs. collector emitter voltage Collector current vs. collector emitter voltage 1.0 100 80 0.9 0.8 0.7 0.6 0.5 10 4.5 4 8 3.5 0.4 3 6 0.3 Ic - mA Ic - mA 60 40 0.2 2.5 2 4 1.5 1 20 2 I B =0.1mA 0 0 0.4 0.8 1.2 1.6 IB=0.5 A 0 0 2.0 10 20 VCE, V 30 40 50 VCE, V Collector and base saturation Collector current vs. base emitter voltage voltage vs. collector current 100 10 VCE=6V pulsed pulsed VBE(sat) , V VCE(sat) , V 1 -25 C Ta= 25 C 75 Ic - mA C 10 1 IC/IB=10 VBE(sat) 20 50 50 0.1 VCE(sat) 20 0.1 0.01 0.2 IC/IB=10 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VBE , V 0.1 1 10 100 Collector Current, mA SEMTECH ELECTRONICS LTD. ® Dated：12/08/2016 Rev：02