MMBT2907A

MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit -VCBO 60 V -VCEO 40 60 V -VEBO 5 V Collector Current -IC 600 mA Power Dissipation Ptot 350 mW Tj 150 O Tstg - 55 to + 150 O Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Junction Temperature Storage Temperature Range MMBT2907 MMBT2907A C C ® Dated : 25/05/2010 Rev:01 MMBT2907 / MMBT2907A Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit MMBT2907 MMBT2907A hFE hFE hFE hFE hFE hFE hFE hFE hFE 35 75 50 100 75 100 100 30 50 300 - - MMBT2907 MMBT2907A -ICBO -ICBO - 20 10 nA nA -V(BR)CBO 60 - V -V(BR)CEO -V(BR)CEO 40 60 - V V -V(BR)EBO 5 - V -VCE(sat) -VCE(sat) - 0.4 1.6 V V -VBE(sat) -VBE(sat) - 1.3 2.6 V V fT 200 - MHz Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Cob - 8 pF Turn-on Time at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA ton - 45 ns Delay Time at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA td - 10 ns Rise Time at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA tr - 40 ns Turn-off Time at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA toff - 100 ns Storage Time at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA ts - 80 ns Fall Time at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA tf - 30 ns DC Current Gain at -IC = 0.1 mA, -VCE = 10 V at -IC = 1 mA, -VCE = 10 V at -IC = 10 mA, -VCE = 10 V at -IC = 150 mA, -VCE = 10 V at -IC = 500 mA, -VCE = 10 V Collector Base Cutoff Current at -VCB = 50 V MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 10 mA MMBT2907 MMBT2907A Emitter Base Breakdown Voltage at -IE = 10 µA Collector Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA Base Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA Gain Bandwidth Product at -IC = 50 mA , -VCE = 20 V, f = 100 MHz ® Dated : 25/05/2010 Rev:01 MMBT2907 / MMBT2907A ® Dated : 25/05/2010 Rev:01