ME25N06

ME25N06/ME25N06-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME25N06 is the N-Channel logic enhancement mode power ● RDS(ON)≦62mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. ● RDS(ON)≦86mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-252-3L) Top View e Ordering Information: ME25N06 (Pb-free) ME25N06-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±25 V Parameter Continuous Drain Current TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation IDM TC=25℃ TC=70℃ Operating Junction Temperature Thermal Resistance-Junction to Case* * The device mounted on 1in2 FR4 board with 2 oz copper Aug, 2014 Ver1.2 ID PD 16 13 65 25 16 A A W TJ -55 to 150 ℃ RθJC 5 ℃/W DCC 正式發行 01 ME25N06/ME25N06-G N-Channel 60-V (D-S) MOSFET Electrical Characteristics (TJ =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-Resistance Typ Max Unit STATIC VSD a Diode Forward Voltage V 3 V VDS=0V, VGS=±25V ±100 nA VDS=60V, VGS=0V 1 μA VGS=10V, ID= 15A 52 62 VGS=4.5V, ID= 10A 70 86 IS=15A, VGS=0V 1 1.2 mΩ V DYNAMIC Qg Total Gate Charge 17 Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 14 td(on) Turn-On Delay Time 11 tr Turn-On Rise Time VDD=30V, RL =15Ω 13 td(off) Turn-Off Delay Time VGEN=10V,RG=3Ω 34 tf Turn-Off Fall Time VDS=48V, VGS=10V, ID=16A nC 4.2 5 VDS=0V, VGS=0V, f=1MHz 0.6 Ω 523 VDS=30V, VGS=0V, f=1MHz pF 47 ns 4 Notes: a, pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. DCC 正式發行 Aug, 2014 Ver1.2 02 ME25N06/ME25N06-G N-Channel 60-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Aug, 2014 Ver1.2 03 ME25N06/ME25N06-G N-Channel 60-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Aug, 2014 Ver1.2 04 ME25N06/ME25N06-G N-Channel 60-V (D-S) MOSFET TO252-3L Package Outline SYMBOL MIN MAX A 2.10 2.50 B 0.40 0.90 C 0.40 0.90 D 5.30 6.30 D1 2.20 2.90 E 6.30 6.75 E1 4.80 5.50 L1 0.90 1.80 L2 0.50 1.10 L3 0.00 0.20 H 8.90 10.40 P 2.30 BSC DCC 正式發行 Aug, 2014 Ver1.2 05