LSGN04R025

LSGN04R025/LSGC04R025 Lonten N-channel 40V, 120A, 2.5mΩ Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using split gate trench DMOS RDS(on),max@ VGS=10V 2.5mΩ technology. This advanced technology has been 120A ID especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and Pin Configuration commutation mode. These devices are well suited for high efficiency fast switching applications. Features  40V,120A, RDS(on),max =2.5mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green device available Applications  Motor Drives  UPS  DC-DC Converter Pb N-Channel MOSFET Absolute Maximum Ratings T C = 25°C unless otherwise noted Parameter Symbol Value Unit 40 V 120 A 81 A IDM 360 A Gate-Source voltage VGSS ±18 V Avalanche energy EAS 225 mJ Power Dissipation ( TC = 25°C ) PD 57.6 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Value Unit 1.67 °C/W Drain-Source Voltage VDSS Continuous drain current ( TC = 25°C ) 1) ID Continuous drain current ( TC = 100°C ) Pulsed drain current 2) 3) Thermal Characteristics Parameter Symbol Thermal Resistance, Junction-to-Case Version 0.3 , May-2019 RθJC 1 www.lonten.cc LSGN04R025/LSGC04R025 Package Marking and Ordering Information Device Device Package Marking LSGN04R025 PPAK5X6 LSGN04R025 LSGC04R025 TO-220 LSGC04R025 Electrical Characteristics Parameter TJ = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=250uA 40 --- --- V Gate threshold voltage VGS(th) VDS=VGS, ID=250uA 1.0 --- 2.2 V Drain-source leakage current IDSS VDS=40 V, VGS=0V, TJ = 25°C --- --- 1 μA Gate leakage current, Forward IGSSF VGS=18 V, VDS=0 V --- --- 100 nA Gate leakage current, Reverse IGSSR VGS=-18 V, VDS=0 V --- --- -100 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=50 A --- --- 2.5 mΩ VGS=4.5 V, ID=20 A --- --- 5 mΩ Forward transconductance gfs VDS =10V , ID=20A --- 131 --- S --- 3210 --- --- 2130 --- --- 343 --- --- 9 --- Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr VDD = 15V,VGS=10V, ID = 20A --- 4 --- Turn-off delay time td(off) RG=1.6Ω --- 45 --- Fall time tf --- 7 --- --- 7 --- --- 17.5 --- --- 67 --- VDS = 15 V, VGS = 0 V, F = 1MHz pF ns Gate charge characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDS=15V, ID=15A, VGS= 10 V nC Drain-Source diode characteristics and Maximum Ratings Continuous Source Current IS --- --- 120 A Pulsed Source Current ISM --- --- 360 A --- 0.85 1.2 V --- --- 26 ns --- --- 95 nC 4) Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr VGS=0V, IS=40A, TJ=25℃ IS=IF, di/dt=100A/us, TJ=25℃ 5) Notes: 1: The maximum junction current rating is package limited. 2: Repetitive Rating: Pulse width limited by maximum junction temperature. 3: VDD=23V, VGS=10V, L=0.5mH, IAS=30A, RG=25Ω, Starting TJ=25℃. 4: Pulse Test：Pulse Width ≤300μs, Duty Cycle≤2％. 5: Guaranteed by design, not subject to production. Version 0.3 , May-2019 2 www.lonten.cc LSGN04R025/LSGC04R025 Electrical Characteristics Diagrams Fig 1: Output Characteristics Fig 2: Transfer Characteristics VGS=3.5V, 4V, 4.5V, 8V,10V From Bottom to Top Common Source Tc = 25°C Pulse test VGS=3V 125℃ 25℃ Figure 4. Gate Charge Waveform Figure 3. Capacitance Characteristics VDS=15V ID=15A Ciss Coss Crss Figure 6. Rdson-Drain Current Figure 5. Body-Diode Characteristics VGS=4.5V Tc =125°C Tc = 25°C VGS=10V Version 0.3 , May-2019 3 www.lonten.cc LSGN04R025/LSGC04R025 Fig 8: Rdson-Junction Temperature(℃) Fig 7: Rds(on) vs Gate Voltage Figure 10. Maximum Safe Operating Area Figure 9. BVdss vs. Junction temperature DC Figure 11. Normalized Maximum Transient Thermal Impedance (RthJC) Version 0.3 , May-2019 4 www.lonten.cc LSGN04R025/LSGC04R025 Test Circuit & Waveform Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms Figure 14. Unclamped Inductive Switching (UIS) Test Circuit & Waveform Figure 15. Diode Recovery Circuit & Waveform Version 0.3 , May-2019 5 www.lonten.cc LSGN04R025/LSGC04R025 Mechanical Dimensions for PPAK5×6 COMMON DIMENSIONS MILLIMETERS SYMBOL INCHS MIN NOM A 1 1.1 1.2 0.039 0.043 0.047 b 0.3 0.4 0.5 0.012 0.016 0.020 C 0.154 0.254 0.354 0.006 0.010 0.014 D1 5 5.2 5.4 0.197 0.205 0.213 D2 3.8 4.1 4.25 0.150 0.161 0.167 E1 5.95 6.15 6.35 0.234 0.242 0.250 E2 5.66 5.86 6.06 0.223 0.231 0.239 E4 3.52 3.72 3.92 0.139 0.146 0.154 e MAX MIN 1.27 BSC NOM MAX 0.050 BSC H 0.4 0.5 0.6 0.016 0.020 0.024 L 0.5 0.6 0.7 0.020 0.024 0.028 L1 - - 0.12 K 1.14 1.29 1.44 0.045 0.051 0.005 0.057 PPAK5×6 Part Marking Information Lonten Logo Lonten LSGN04R025 Part Number (Not marked on the engineering sample) ABYWW99 “99” Manufacturing code “AB” Foundry & Assembly code “YWW” Date Code Calendar Year Calendar Week Week Code 2018 G Workweek 01 01 2019 H Workweek 02 02 2020 I Workweek 03 03 2021 J Workweek 04 04 2022 K Workweek 05 05 2023 L Workweek 06 06 2024 M ….. ….. Version 0.2 ,May- 2019 Year Code 6 www.lonten.cc LSGN04R025/LSGC04R025 TO-220 PACKAGE INFORMATION COMMON DIMENSIONS SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A 4.37 4.57 4.70 0.172 0.180 0.185 A1 1.25 1.30 1.40 0.049 0.051 0.055 A2 2.20 2.40 2.60 0.087 0.094 0.102 b 0.70 0.80 0.95 0.028 0.031 0.037 b2 1.17 1.27 1.47 0.046 0.050 0.058 c 0.45 0.50 0.60 0.018 0.020 0.024 D 15.10 15.60 16.10 0.594 0.614 0.634 D1 8.80 9.10 9.40 0.346 0.358 0.370 D2 5.50 - - 0.217 - - E 9.70 10.00 10.30 0.382 0.394 0.406 E3 7.00 - - 0.276 - - e 2.54BCS e1 0.1BSC 5.08BCS 0.2REF H1 6.25 6.50 6.85 0.246 0.256 0.270 L 12.75 13.50 13.80 0.502 0.531 0.543 L1 - 3.10 3.40 - 0.122 0.134 ØP 3.40 3.60 3.80 0.134 0.142 0.150 Q 2.60 2.80 3.00 0.102 0.110 0.118 TO-220 Part Marking Information Lonten Logo Lonten Part Number LSGC04R025 “AB” Foundry & Assembly code ABYWW99 “99” Manufacturing code “YWW” Date Code Calendar Year Calendar Week Week Code 2018 G Workweek 01 01 2019 H Workweek 02 02 2020 I Workweek 03 03 2021 J Workweek 04 04 2022 K Workweek 05 05 2023 L Workweek 06 06 2024 M ….. ….. Version 0.2 ,May- 2019 Year Code 7 www.lonten.cc LSGN04R025/LSGC04R025 Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. 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The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 0.2 ,May- 2019 8 www.lonten.cc