PMV74EPER

PMV74EPE 30 V, P-channel Trench MOSFET 20 August 2019 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • • • • Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -30 V VGS gate-source voltage -20 - 20 V ID drain current - - -3.4 A - 74 90 mΩ VGS = -10 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = -10 V; ID = -2.8 A; Tj = 25 °C 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . PMV74EPE Nexperia 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 TO-236AB (SOT23) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package PMV74EPE Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code[1] PMV74EPE 2P% [1] % = placeholder for manufacturing site code PMV74EPE Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2019 © Nexperia B.V. 2019. All rights reserved 2 / 14 PMV74EPE Nexperia 30 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -30 V VGS gate-source voltage -20 20 V ID drain current VGS = -10 V; Tamb = 25 °C; t ≤ 5 s [1] - -3.4 A VGS = -10 V; Tamb = 25 °C [1] - -2.8 A VGS = -10 V; Tamb = 100 °C [1] - -1.8 A - -11 A [2] - 510 mW [1] - 1 W - 6.4 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -1.1 A Source-drain diode IS [1] [2] source current Tamb = 25 °C [1] 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. aaa-030137 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig. 1. aaa-030138 120 -25 25 75 Normalized total power dissipation as a function of ambient temperature PMV74EPE Product data sheet 0 -75 125 175 Tamb (°C) Fig. 2. -25 75 125 175 Tamb (°C) Normalized continous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. 20 August 2019 25 © Nexperia B.V. 2019. All rights reserved 3 / 14 PMV74EPE Nexperia 30 V, P-channel Trench MOSFET aaa-030203 -102 ID (A) -10 tp = 10 µs Limit RDSon = VDS/ID 100 µs -1 1 ms DC; Tsp = 25 °C -10-1 -10-2 -10-1 Fig. 3. 10 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 -1 100 ms -10 -102 VDS (V) Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMV74EPE Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2019 © Nexperia B.V. 2019. All rights reserved 4 / 14 PMV74EPE Nexperia 30 V, P-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) Conditions thermal resistance from in free air junction to ambient in free air; t ≤ 5 s Rth(j-sp) [1] [2] thermal resistance from junction to solder point Min Typ Max Unit [1] - 212 244 K/W [2] - 104 119 K/W [2] - 69 79 K/W - 17 20 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . aaa-021915 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.33 0.20 0.50 0.25 0.10 0.05 10 0.01 0.02 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-021916 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.20 10 0.50 0.25 0.10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 2 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV74EPE Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2019 © Nexperia B.V. 2019. All rights reserved 5 / 14 PMV74EPE Nexperia 30 V, P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -30 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -1 -2 -3 V IDSS drain leakage current VDS = -30 V; VGS = 0 V; Tj = 25 °C - - -1 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -2 µA VGS = -10 V; ID = -2.8 A; Tj = 25 °C - 74 90 mΩ VGS = -10 V; ID = -2.8 A; Tj = 150 °C - 112 137 mΩ RDSon drain-source on-state resistance VGS = -4.5 V; ID = -2.1 A; Tj = 25 °C - 116 150 mΩ gfs forward transconductance VDS = -10 V; ID = -2.7 A; Tj = 25 °C - 12 - S RG gate resistance f = 1 MHz - 12 - Ω VDS = -15 V; ID = -2.7 A; VGS = -10 V; Tj = 25 °C - 5.7 10 nC - 1.2 - nC - 1.1 - nC - 356 - pF - 60 - pF - 38 - pF - 5 - ns - 11 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 19 - ns tf fall time - 8 - ns - -0.8 -1.2 V VDS = -15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -15 V; ID = -2.7 A; VGS = -10 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage PMV74EPE Product data sheet IS = -1.1 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 20 August 2019 © Nexperia B.V. 2019. All rights reserved 6 / 14 PMV74EPE Nexperia 30 V, P-channel Trench MOSFET aaa-030168 -12 VGS = -10 V -5.0 V -4.5 V ID (A) -8 -4.0 V -10-4 -4 -3.5 V -10-5 ID (A) aaa-026722 -10-3 min typ max -3.0 V 0 Fig. 6. 0 -1 -2 -3 VDS (V) -10-6 -4 0 -1 -2 VGS (V) -4 Tj = 25 °C VDS = -5 V; Tj = 25 °C Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-030169 400 RDSon (m ) -3.2 V -3.5 V aaa-030170 400 RDSon (mΩ) -4.0 V 300 300 -4.5 V 200 200 -5.0 V 100 Tj = 150 °C 100 VGS = -10 V 0 0 -4 -8 ID (A) Tj = 25 °C 0 -12 Tj = 25 °C Fig. 8. -3 Product data sheet -4 -8 -12 -16 -20 VGS (V) ID = -2.7 A Drain-source on-state resistance as a function of drain current; typical values PMV74EPE 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 20 August 2019 © Nexperia B.V. 2019. All rights reserved 7 / 14 PMV74EPE Nexperia 30 V, P-channel Trench MOSFET aaa-026725 -14 ID (A) -12 aaa-026726 2.0 a -10 1.5 -8 -6 1.0 -4 -2 0 Tj = 150 °C 0 Tj = 25 °C -2 -4 VGS (V) 0.5 -60 -6 0 60 120 Tj (°C) 180 VDS > ID x RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-026727 -4 max -2 typ aaa-026728 103 VGS(th) (V) -3 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values C (pF) Ciss 102 Coss 0 -60 Crss min -1 0 60 120 Tj (°C) 10 -10-1 180 ID = -250 µA; VDS = VGS Product data sheet -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMV74EPE -1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 20 August 2019 © Nexperia B.V. 2019. All rights reserved 8 / 14 PMV74EPE Nexperia 30 V, P-channel Trench MOSFET aaa-030171 -10 VDS VGS (V) ID -8 VGS(pl) -6 VGS(th) VGS -4 QGS1 -2 0 QGS2 0 2 4 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 15. Gate charge waveform definitions 6 ID = -2.7 A; VDS = -15 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-026730 -5 IS (A) -4 -3 -2 Tj = 150 °C -1 0 0 -0.4 Tj = 25 °C -0.8 VSD (V) -1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMV74EPE Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2019 © Nexperia B.V. 2019. All rights reserved 9 / 14 PMV74EPE Nexperia 30 V, P-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 1.9 0.95 HE Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.1 sot023_po Outline version SOT23 References IEC JEDEC JEITA European projection Issue date 14-06-19 14-09-22 TO-236AB Fig. 18. Package outline TO-236AB (SOT23) PMV74EPE Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2019 © Nexperia B.V. 2019. All rights reserved 10 / 14 PMV74EPE Nexperia 30 V, P-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for TO-236AB (SOT23) PMV74EPE Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2019 © Nexperia B.V. 2019. All rights reserved 11 / 14 PMV74EPE Nexperia 30 V, P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMV74EPE v.1 Product data sheet - - PMV74EPE Product data sheet 20190820 All information provided in this document is subject to legal disclaimers. 20 August 2019 © Nexperia B.V. 2019. All rights reserved 12 / 14 PMV74EPE Nexperia 30 V, P-channel Trench MOSFET 15. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". 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Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 20 August 2019 © Nexperia B.V. 2019. All rights reserved 13 / 14 PMV74EPE Nexperia 30 V, P-channel Trench MOSFET Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Test information.......................................................... 9 12. Package outline........................................................ 10 13. Soldering................................................................... 11 14. Revision history........................................................12 15. Legal information......................................................13 © Nexperia B.V. 2019. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 20 August 2019 PMV74EPE Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2019 © Nexperia B.V. 2019. All rights reserved 14 / 14