SE60P20B

SE60P20B P-Channel Enhancement-Mode MOSFET Revision: A Features General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through For a single MOSFET   VDS = -60V RDS(ON) = 26mΩ @ VGS=-10V FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Pin configurations See Diagram below D G TO-252 S Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current Total Power Dissipation Continuous Pulsed @TA=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. ID -20 -80 A PD 170 W TJ -55 to 150 ℃ 1. SE60P20B Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=-250μA, VGS=0V IDSS Drain to Source Leakage Current VDS=-60V, VGS=0V IGSS Gate-Body Leakage Current VGS=20V VGS(th) RDS(ON) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 2 -60 VDS=VGS, ID=250μA -1 VGS=-10V, ID=-10A - VDS=-25V, ID=-10A 19 V 26 1 μA 100 nA -2.5 V 33 mΩ S DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=-25V, f=1MHz 3500 pF 1250 pF 450 pF SWITCHING PARAMETERS 2 Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time td(off) 120 VGS=-10V, VDS=-30V, 180 nC 32 nC 53 nC VGS=-10V, VDS=-30V, 20 ns Turn-Off Delay Time RGEN=2.6Ω 51 ns td(r) Turn-On Rise Time ID=-42A 99 ns td(f) Turn-Off Fall Time 64 ns ID=-42A Thermal Resistance Symbol RθJC Parameter Junction to Case ShangHai Sino-IC Microelectronic Co., Ltd. Typ Max Units - 3.6 ℃/W 2. SE60P20B Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE60P20B Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE60P20B Package Outline Dimension TO-252 ShangHai Sino-IC Microelectronic Co., Ltd. 5. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 6.