AO3415-SOT23

AO3415 -20V P-Channel Enhancement Mode MOSFET General Features Description ● VDS = -20V,ID =-4A The AO3415 uses advanced trench technology to provide RDS(ON) < 63mΩ @ VGS=-2.5V excellent RDS(ON), low gate charge and operation with gate RDS(ON) < 55mΩ @ VGS=-4.5V voltages as low as1.8V. This device is suitable for use as a ESD Rating: 2500V HBM load switch or in PWM applications .It is ESD protested. ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM application ● Load switch Schematic diagram Package Dimensions D G SOT-23(PACKAGE) A B C D E Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 F 0.45 REF. Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG G H K J L Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 M 0° REF. 0.55 S 10° Limit Unit -20 V ±8 V -4 A -30 A 1.4 W -55 To 150 ℃ 89.3 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit - V Off Characteristics Drain-Source Breakdown Voltage VGS=0V ID=-250μA BVDSS - 1- -20 2012-7-8 AO3415 Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±8V,V - - ±10 μA VDS=VGS,ID=-250μA -0.4 -0.65 -1.0 V VGS=-4.5V, ID=-4A - 34. 55 mΩ VGS=-2.5V, ID=-4A - 44 63 mΩ VDS=-5V,ID=-4A 8 - - S - 950 - PF - 165 - PF - 120 - PF - 12 nS DS=0V On Characteristics (Note 3) Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-10V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-10V,RL=2. 5Ω - 10 nS td(off) VGS=-4.5V,RGEN=3Ω - 19 nS - 25 nS - 12 nC - 1.4 - nC - 3.6 - nC - - -1.2 V - - -2.2 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V,ID=-4A, VGS=-4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=-1A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production - 2- 2012-7-8 AO3415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Safe Operation Area ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance - 3- 2012-7-8 ID- Drain Current (A) Normalized On-Resistance AO3415 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance Rdson (mΩ) C Capacitance (pF) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward - 4- 2012-7-8