FIR12N65FG

FIR12N65FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features  High Voltage : BVDSS=650V(Min.)  Low Crss : Crss=14.6pF(Typ.) G D  Low gate charge : Qg=41nC(Typ.)  Low RDS(on) : RDS(on)=0.65Ω(Max.) S D G S Marking Diagram YAWW FIR12N65F Y = Year A = Assembly Location WW = Work Week FIR12N65F = Specific Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS 30 V TC=25℃ 12 A TC=100℃ 9.0 A IDM 48 A PD 51 W Drain current (DC) * Drain current (Pulsed) ID * Power dissipation Avalanche current (Single) ② IAS 12 A Single pulsed avalanche energy ② EAS 790 mJ Avalanche current (Repetitive) ① IAR 12 A Repetitive avalanche energy ① EAR 7.6 mJ TJ 150 Tstg -55~150 Junction temperature Storage temperature range C * Limited by maximum junction temperature Characteristic Thermal resistance Symbol Typ. Max. Junction-case Rth(J-C) - 2.6 Junction-ambient Rth(J-A) - 120 @ 2010 Copyright By American First Semiconductor Unit ℃/W Page 1/7 FIR12N65FG Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250uA, VGS=0V 650 - - V Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 2.0 - 4.0 V Drain-source cut-off current IDSS VDS=650V, VGS=0V - - 1 uA Gate leakage current IGSS VDS=0V, VGS=30V - - 100 nA Drain-source on-resistance ④ RDS(on) VGS=10V, ID=6.0A - 0.65 0.80  Forward transfer conductance ④ gfs VDS=10V, ID=6.0A - 10 - S - 1476 - - 152 - - 4.5 - - 37 - - 62 - - 47 - - 90 - - 24 - - 8 - - 7.5 - Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time VGS=0V, VDS=25V f=1 MHz VDD=300V, ID=12A RG=25Ω tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge ③④ VDS=520V, VGS=10V ID=12A ③④ Qgd pF ns nC Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Source current (DC) IS Test Condition Min. Typ. Max. Unit - - 12 - - 48 Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=12A - - 1.4 V Reverse recovery time trr - 600 - ns Reverse recovery charge Qrr IS=12A, VGS=0V dIF/dt=100A/us - 5.7 - uC A Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=1.8mH, IAS=6.6A, V DD=140V, R G=25Ω, Starting TJ=25℃ ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature www.First-semi.com Page 2/7 FIR12N65FG Electrical Characteristic Curves Fig. 2 ID - VGS Fig. 1 ID - VDS ℃ - Fig. 3 RDS(on) - ID Fig. 4 IS - VSD ℃ Fig. 5 Capacitance - VDS Fig.6 VGS - QG ℃ www.First-semi.com Page 3/7 FIR12N65FG Electrical Characteristic Curves Fig.8 RDS(on) - TJ Fig. 7 VDSS - TJ C C Fig. 9 ID - TC Fig. 10 Safe Operating Area www.First-semi.com Page 4/7 FIR12N65FG Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform www.First-semi.com Page 5/7 FIR12N65FG Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform www.First-semi.com Page 6/7 FIR12N65FG Package Dimensions TO-220F −T− −B− F SEATING PLANE C S Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 Y www.First-semi.com Page 7/7