WD3133E-5/TR

WD3133 WD3133 HIGH EFFICIENCY, 1.2-MHz DC-DC STEP-UP CONVERTERS Http//:www.sh-willsemi.com Descriptions The WD3133 is a high efficiency, high power, peak current mode step-up converter. Internal 0.35Ω HV power MOSFET with Min. 1A current limit. For portable device with Li-ion battery application, WD3133 could output typical 12V / 200mA ~300mA from 3.3V~5V input. SOT-23-5L The boost converter WD3133 runs in Pulse-Width Modulation (PWM) mode, at 1.2MHz fixed switching LX 1 GND 2 FB 3 efficiency. It allows for the use of small external components. At light load currents the converter enters Skipping Mode to maintain a high efficiency over a wide load current range. The build-in soft start circuitry 5 VIN 4 EN WD3133 frequency to reduce output ripple, improve conversion minimizes the inrush current at start-up. The WD3133 is available in SOT-23-5L package. Pin configuration (Top view) Standard product is Pb-free and Halogen-free. 4 5 Features  Wide input voltage range from 2.7-V to 5.5-V  1.25-V (±2%) high accuracy reference voltage  1.2-MHz switching frequency  Up to 93% efficiency  Over 1-A (min.) power switch current limit  Provide typical 12V / 200mA~300mA output from  3133 EAYW 1 2 3 3133 = Device code 3.3V~5V input EA = Special code Built-in Soft-Start Y = Year code W = Week code Marking Applications  Smart Phones  Tablets  Portable games  PADs Will Semiconductor Ltd. Order information 1 Device Package Shipping WD3133E-5/TR SOT-23-5L 3000/Reel&Tape Aug, 2016 - Rev. 1.2 WD3133 Typical applications Pin descriptions L1 10μH VIN WSB5508L VOUT CIN 10μF COUT 10μF VIN EN LX WD3133E ON/OFF Symbol GND R1 SOT-23-5L Descriptions LX 1 Switch Node GND 2 Ground FB 3 Feedback EN 4 Enable, Active High VIN 5 Power Supply R2 FB Block diagram Current Sense LX PWM COMP Gate Driver PWM Logic VIN UVLO I SENSE EN Current Limit OSC 1.2MHz Chip Enable FB EA Thermal Shutdown Will Semiconductor Ltd. VREF Soft Start GND 2 Aug, 2016 - Rev. 1.2 WD3133 Absolute maximum ratings Parameter Symbol Value Unit VIN pin voltage range VIN -0.3～6.5 V EN pin voltage range - -0.3～VIN V LX pin voltage range (DC) - -0.3～40 V 0.5 W Power Dissipation – SOT-23-5L (Note 1) PD Power Dissipation – SOT-23-5L (Note 2) Junction to Ambient Thermal Resistance – SOT-23-5L (Note 1) Junction to Ambient Thermal Resistance – SOT-23-5L (Note 2) Junction temperature RθJA TJ Lead temperature(Soldering, 10s) TL Operation temperature Topr Storage temperature Tstg 0.3 W 250 o 416 o C/W C/W 150 o 260 o -40 ~ 85 o -55 ~ 150 o C C C C These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum Ratings” may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. Note 1: Surface mounted on FR-4 Board using 1 square inch pad size, dual side, 1oz copper Note 2: Surface mounted on FR-4 board using minimum pad size, 1oz copper Will Semiconductor Ltd. 3 Aug, 2016 - Rev. 1.2 WD3133 Electronics Characteristics o (Ta=25 C, VIN=3.6V, VEN=VIN, CIN=10μF, COUT=10μF, L=10μH, unless otherwise noted) Parameter Symbol Operation Voltage Range VIN Under Voltage Lockout VUVLO UVLO Hysteresis VUVLO-HYS Quiescent Current IQ No Switching 0.3 1 mA Supply Current IS Switching 1.5 3 mA Shutdown Current ISD VEN < 0.4V 1 μA Operation Frequency fOSC 1.0 1.4 MHz Maximum Duty Cycle DMAX 92 Feedback Reference VREF 1.225 On Resistance RON Current Limit ILIM EN Threshold Voltage Test Condition VIN Rising Min Typ Max Units 2.7 -- 5.5 V 1.8 2.2 2.5 V 0.1 ILX=100mA 1 1.2 V % 1.25 1.275 0.35 Ω 1.5 A VENL 0.4 VENH V 1.5 V V EN Pull Down Resistance REN 1.5 MΩ Thermal Shutdown Temperature TSD 160 °C TSD Hysteresis TSD-HYS 30 °C Will Semiconductor Ltd. 4 Aug, 2016 - Rev. 1.2 WD3133 Typical Characteristics o 100 100 90 90 Efficiency(%) Efficiency(%) (Ta=25 C, VIN=3.6V, VEN=VIN, CIN=10μF, COUT=10μF, L=10μH, unless otherwise noted) 80 70 L=22uH,VOUT=9V VIN=3.0V VIN=3.6V 60 50 VIN=5.0V 20 40 60 80 100 L=10uH,VOUT=9V 70 VIN=3.0V VIN=3.6V 60 VIN=4.2V 0 80 50 120 VIN=4.2V VIN=5.0V 0 20 Output Current(mA) 100 100 90 90 80 L=22uH,VOUT=12V VIN=3.0V VIN=3.6V 60 50 VIN=5.0V 20 40 60 80 100 70 VIN=3.0V VIN=3.6V 50 120 VIN=4.2V VIN=5.0V 0 20 90 Efficiency(%) Efficiency(%) 90 80 L=22uH,VOUT=15V VIN=3.0V VIN=3.6V VIN=5.0V 40 60 80 100 120 100 80 70 L=10uH,VOUT=15V VIN=3.0V 50 120 VIN=3.6V VIN=4.2V VIN=5.0V 0 20 40 60 80 100 Output Current(mA) Output Current(mA) Efficiency vs. Output Current Will Semiconductor Ltd. 80 60 VIN=4.2V 20 60 Efficiency vs. Output Current 100 0 40 Output Current(mA) 100 50 120 L=10uH,VOUT=12V Efficiency vs. Output Current 60 100 80 Output Current(mA) 70 80 60 VIN=4.2V 0 60 Efficiency vs. Output Current Efficiency(%) Efficiency(%) Efficiency vs. Output Current 70 40 Output Current(mA) Efficiency vs. Output Current 5 Aug, 2016 - Rev. 1.2 120 WD3133 12.25 9.20 12.20 12.15 9.10 9.05 9.00 8.95 VOUT=9.0V 8.90 VIN=3.3V 12.05 12.00 11.95 50 100 150 VIN=3.3V 11.85 VIN=4.2V 11.80 VIN=5.0V 0 VOUT=12V 11.90 VIN=4.2V 8.85 8.80 12.10 Output Voltage(V) Output Voltage(V) 9.15 11.75 200 VIN=5.0V 0 50 Output Voltage vs. Load Current 1.15 1.10 Enable Threshold(V) 15.2 Output Voltage(V) 200 Output Voltage vs. Load Current 15.3 15.1 15.0 14.9 VOUT=15V VIN=3.3V 14.8 VIN=4.2V 25 50 75 100 125 1.00 0.95 0.90 0.85 0.80 VIN=5.0V 0 1.05 0.75 3.0 150 EN(Rising) EN(Falling) 3.5 4.0 4.5 5.0 5.5 Supply Voltage(V) Output Current(mA) Output Voltage vs. Load Current Enable Threshold vs. Supply Voltage 1.4 1.4 1.3 1.3 Frequency(MHz) Frequency(MHz) 150 Output Current(mA) Output Current(mA) 14.7 100 1.2 1.1 1.2 1.1 VIN=3.3V VIN=4.2V 1.0 3.0 3.5 4.0 4.5 5.0 1.0 -50 5.5 Input Voltage(V) -25 0 25 50 75 100 o Temperature( C) Operation Frequency vs. Supply Voltage Will Semiconductor Ltd. VIN=5.0V Operation Frequency vs. Temperature 6 Aug, 2016 - Rev. 1.2 WD3133 1.2 Enable Threshold Voltage(V) UVLO Voltage(V) 2.4 2.3 2.2 2.1 2.0 -50 UVLO(Rising) UVLO(Falling) -25 0 25 50 75 VIN=3.6V EN(Rising) EN(Falling) 1.1 1.0 0.9 0.8 -50 100 -25 UVLO Threshold vs. Temperature 50 75 100 Enable Threshold vs. Temperature 12.4 12.20 12.2 12.15 Output Voltage(V) Output Voltage(V) 25 Temperature( C) Temperature( C) 12.10 12.05 12.00 0 o o o TA=85 C VIN=3.3V VIN=3.6V 0 50 100 150 11.8 VOUT=12V VIN=3.3V 200 VIN=3.6V 11.6 11.4 VIN=4.2V VIN=5.0V 0 100 200 300 400 Output Current(mA) Output Current(mA) Load Regulation at TA=85ºC Output Current Capability Start-up from EN Will Semiconductor Ltd. 12.0 Shut-down from EN 7 Aug, 2016 - Rev. 1.2 500 WD3133 Operation Waveforms Will Semiconductor Ltd. Load Transient Response 8 Aug, 2016 - Rev. 1.2 WD3133 Operation Information through inductor in charging phase is detected by a Normal Operation The WD3133 is an adjustable voltage output, peak current mode controlled DC-DC boost converter. This means that switch duty cycle is directly controlled by the peak switch current rather than only by output voltage, with benefit of fast load transient response. The WD3133 regulates the output voltage using a current sensing circuit. As the value comes across the current limiting threshold the N- MOSFET turns off, so that the inductor will be forced to leave charging stage and enter discharging stage. Therefore, the inductor current will not increase over the current limiting threshold. UVLO Protection combined pulse-width (PWM) and pulse-skipping To avoid malfunction of the WD3133 at low input modulation topology. In PWM mode, the device runs voltages, an under voltage lockout is included that at a 1.2MHz fixed frequency. Referring to the block disables the device, until the input voltage exceeds diagram, the switch is turned ON at the start of each 2.2V (Typ.). oscillator cycle. It is turned OFF when switch current reaches a predetermined level. The current trip level Shutdown Mode is set by using an error amplifier which senses the Drive EN to GND to place the WD3133 in shutdown converter output voltage. The main switch current mode. In shutdown mode, the reference, control sensing voltage signal is summed by a slope circuit, and the main switch turn off. Input current compensation voltage signal. Slope compensation falls to smaller than 1μA during shutdown mode. is necessary to prevent sub-harmonic oscillations that may occur in peak current mode architectures Over Temperature Protection (OTP) when exceeding 50% duty cycle. At very light loads, As soon as the junction temperature (TJ) exceeds the WD3133 will automatically enter pulse skipping 160 C (Typ.), the WD3133 goes into thermal mode. When the converter output voltage is slightly shutdown. In this mode, the main N-MOSFET is higher than regulated voltage, the device will stop turned off until temperature falls below typically switching and skip some periods to maintain output 130 C. Then the device starts switching again. o o regulation. The WD3133 is highly integrated with a low on-resistance N-MOS switch, internal control-loop compensation network and soft-start circuitry. Additional features include Cycle-By-Cycle Current Limit Protection and Over Temperature Protection. Start-Up The build-in soft-start function of WD3133 is implemented to suppress the inrush current to an acceptable value at the beginning of power on. Cycle by Cycle Current Limit The WD3133 uses a cycle-by-cycle current limit circuitry to limit the inductor peak current in the event of an overload condition. The current flow Will Semiconductor Ltd. 9 Aug, 2016 - Rev. 1.2 WD3133 Output capacitance controls the ripple voltage on Application Information the Output rail and provides a low-impedance path External component selection for the application for the switching and transient-load currents of the circuit depends on the load current requirements. boost converter. It also sets the location of the Certain tradeoffs between different performance output pole in the control loop of the boost converter. parameters can also be made. There are limitations to the minimum and maximum capacitance Boost Inductor Selection on Output. The recommended minimum capacitor on Output is 4.7μF, X5R or X7R A 4.7μH to 22μH inductor with low DCR and high ceramic capacitor. For heavier load current, larger saturation current is recommended. The minimum output capacitor should be selected. The low ESR of and maximum inductor values are constrained by the ceramic capacitor minimizes ripple voltage and many considerations. The minimum inductance is power dissipation from the large, pulsating currents limited by the peak inductor-current value. The of the boost converter and provides adequate phase ripple current in the inductor is inversely proportional margin to the inductance value, so the output voltage may conditions. The allowed maximum operating voltage fall out of regulation if the peak inductor current of output capacitor should be larger enough than exceeds the current-limit value (1A minimum). Using VOUT. a nominal 10uH inductor allows full recommended current operation even if the inductance is 20% low across all recommended operating Diode Selection due to component variation. However, for VOUT>30V The rectifier diode supplies current path to the applications, a 4.7μH inductor is recommended. inductor when the internal MOSFET is off. Use a The saturation current of inductor should be higher enough than the peak switch current. And the inductor should have low core losses at 1.2MHz and low DCR (copper wire resistance). Schottky with low forward voltage to reduce losses. The diode should be rated for a reverse blocking voltage greater than the output voltage used. The average current rating must be greater than the maximum load current expected, and the peak current rating must be greater than the peak Input Capacitor Selection inductor current. Connect the input capacitance from VDD to the Diode the following requirements: reference ground plane. Input capacitance reduces ● Low forward voltage the ac voltage ripple on the input rail by providing a ● High switching speed : 50ns max. low-impedance path for the switching current of the ● Reverse voltage : > VOUT boost converter. The WD3133 does not have a ● Rated current : IPK or more minimum or maximum input capacitance requirement for operation, but a 4.7μF~10μF, X7R or X5R ceramic capacitor most A good circuit board layout aids in extracting the applications for reasonable input-voltage ripple most performance from the WD3133. Poor circuit performance. There are several scenarios where it layout is electromagnetic recommended is recommended to use for PC Board Layout Considerations additional input capacitance. Output Capacitor Selection degrades the output interference ripple (EMI) or and the electro- magnetic compatibility (EMC) performance. The evaluation board layout is optimized for the WD3133. Use this layout for best performance. If this layout Connect the boost-converter output capacitance needs changing, use the following guidelines: from Output to the reference ground plane. The 1. Use separate analog and power ground planes. Will Semiconductor Ltd. 10 Aug, 2016 - Rev. 1.2 WD3133 Connect the sensitive analog circuitry (such as voltage divider components) to analog ground. Connect the power components (such as input and output bypass capacitors) to power ground. Connect the two ground planes together near the load to reduce the effects of voltage dropped on circuit board traces. 2. Locate CIN as close to the VDD pin as possible, and use separate input bypass capacitors for the analog. 3. Route the high current path from CIN, through L to the LX and PGND pins as short as possible. 4. Keep high current traces as short and as wide as possible. 5. The output filter of the boost converter is also critical for layout. The Diode and Output capacitors should be placed to minimize the area of current loop through Output –PGND– LX. 6. Avoid routing high impedance traces, such as FB, near the high current traces and components or near the Diode node (D). If high impedance traces are routed near high current and/or the LX node, place a ground plane shield between the traces. Will Semiconductor Ltd. 11 Aug, 2016 - Rev. 1.2 WD3133 Package outline dimensions SOT-23-5L Symbol Dimensions in millimeter Min. Typ. Max. A 1.050 - 1.250 A1 0.000 - 0.100 A2 1.050 - 1.150 b 0.300 - 0.500 c 0.100 - 0.200 D 2.820 - 3.020 E1 1.500 - 1.700 E 2.650 - 2.950 e 0.950(BSC) e1 1.800 - 2.000 L 0.300 - 0.600 θ 0° - 8° Will Semiconductor Ltd. 12 Aug, 2016 - Rev. 1.2