P06P03LDG

P06P03LDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 45mΩ @VGS = -10V -12A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS LIMITS Drain-Source Voltage SYMBOL VDS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current Avalanche Current TC = 25 °C Avalanche Energy Power Dissipation TC = 100 °C L = 0.1mH TC = 25 °C -10 IDM -30 IAS -29 EAS 42 TJ, TSTG V -12 A mJ 48 PD TC = 100 °C Operating Junction & Storage Temperature Range -30 ID 1 UNITS W 20 -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RqJC 3 Junction-to-Ambient RqJA 75 1 UNITS °C / W Pulse width limited by maximum junction temperature. Ver 1.1 1 2013-3-13 P06P03LDG P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX -1.5 -3 UNIT STATIC V(BR)DSS VGS = 0V, ID = -250mA -30 VGS(th) VDS = VGS, ID = -250mA -1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 VDS = -20V, VGS = 0V , TJ = 125 °C -10 mA On-State Drain Current1 ID(ON) Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance1 VDS = -5V, VGS = -10V RDS(ON) Forward Transconductance1 gfs -30 V A VGS = -4.5V, ID = -10A 60 75 VGS = -10V, ID = -12A 37 45 VDS = -10V, ID = -12A 16 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 2 Qg Gate-Source Charge Gate-Drain Charge 2 Qgs Qgd Turn-On Delay Time Rise Time 2 2 tr Turn-Off Delay Time VGS = 0V, VDS = -15V, f = 1MHz td(off) Fall Time2 pF 135 70 VDS = 0.5V(BR)DSS, VGS = -10V, ID = -12A td(on) 2 2 530 10 nC 2.2 2 5.7 VDS = -15V, RL = 1Ω ID@ -1A, VGS = -10V, RGS = 6Ω 10 nS 18 tf 5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) IS Continuous Current 1 Forward Voltage Reverse Recovery Time VSD Reverse Recovery Charge Qrr trr IF = -1A, VGS = 0V IF = -5A, dlF/dt = 100A / mS 1 Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2 Independent of operating temperature. Ver 1.1 2 -12 A -1.2 V 15.5 nS 7.9 nC 2013-3-13 P06P03LDG P-Channel Enhancement Mode MOSFET Ver 1.1 3 2013-3-13 P06P03LDG P-Channel Enhancement Mode MOSFET Ver 1.1 4 2013-3-13 P06P03LDG P-Channel Enhancement Mode MOSFET Ver 1.1 5 2013-3-13